Temperature-Dependent Photoluminescence of ZnTe Films Grown on Si Substrates |
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引用本文: | 单崇新,范希武,张吉英,张振中,吕有明,刘益春,申德振.Temperature-Dependent Photoluminescence of ZnTe Films Grown on Si Substrates[J].中国物理快报,2003,20(11):2049-2052. |
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作者姓名: | 单崇新 范希武 张吉英 张振中 吕有明 刘益春 申德振 |
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作者单位: | KeyLaboratoryofExcitedStateProcesses,ChangchunInstituteofOptics,FineMechanicsandPhysics,ChineseAcademyofSciences,Changchun130033ChineseAcademyofSciences,Changchun130033 |
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摘 要: | ZnTe films have been prepared on Si substrates by metal-organic chemical vapour deposition (MOCVD), and the temperature-dependent photoluminescence (PL) properties were investigated. The near-band-edge (NBE) emission of the ZnTe sample at 83K shows an asymmetry line shape, which can be decomposed into two Gaus-siam lines labelled by FE and BE. Temperature-dependent PL intensity of the NBE peak shows two variation regions, and an expression with two dissociation channels fits well to the experimental data. The results of the temperature-dependent full width at half maximum (FWHM) and peak energy were well understood under the framework of the two-dissociation-channel model. That is, at low temperature, the emission from bound excitons governs the NBE peak, while above 157K, the free exciton emission becomes dominant gradually. A simple model with three energy levels was employed to describe the variation in emission intensity of BE and FE with temperature.
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关 键 词: | 温度依赖性 光致发光 ZnTe薄膜 金属有机化学蒸汽沉积 发光装置 硅衬底 半导体薄膜 |
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