Temperature Dependence of Emission Properties of Self-Assembled InGaN Quantum Dots

Emission properties of self-assembled green-emitting InGaN quantum dots （QDs） grown on sapphire substrates by using metal organic chemical vapor deposition are studied by temperature-dependent photoluminescence （PL） measurements. As temperature increases （15-300K）, the PL peak energy shows an anomalous V-shaped （redshift blueshift） variation instead of an S-shaped （redshift-blueshift-redshift） variation, as observed typically in green-emitting InGaN/GaN multi-quantum wells （MOWs）. The PL full width at half maximum （FWHM） also shows a V-shaped （decrease-increase） variation. The temperature dependence of the PL peak energy and FWHM of QDs are well explained by a model similar to MOWs, in which carriers transferring in localized states play an important role, while the confinement energy of localized states in the QDs is significantly larger than that in MOWs. By analyzing the integrated PL intensity, the larger confinement energy of localized states in the QDs is estimated to be 105.9meV, which is well explained by taking into account the band-gap shrinkage and carrier thermalization with temperature. It is also found that the nonradiative combination centers in QD samples are much less than those in QW samples with the same In content.     

Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells

The structural and optical properties of InGaN/GaN multiple quantum wells(MQWs) with different barrier thicknesses are studied by means of high resolution X-ray diffraction(HRXRD), a cross-sectional transmission electron microscope(TEM), and temperature-dependent photoluminescence(PL) measurements. HRXRD and cross-sectional TEM measurements show that the interfaces between wells and barriers are abrupt and the entire MQW region has good periodicity for all three samples. As the barrier thickness is increased, the temperature of the turning point from blueshift to redshift of the S-shaped temperature-dependent PL peak energy increases monotonously, which indicates that the localization potentials due to In-rich clusters is deeper. From the Arrhenius plot of the normalized integrated PL intensity, it is found that there are two kinds of nonradiative recombination processes accounting for the thermal quenching of photoluminescence,and the corresponding activation energy(or the localization potential) increases with the increase of the barrier thickness.The dependence on barrier thickness is attributed to the redistribution of In-rich clusters during the growth of barrier layers,i.e., clusters with lower In contents aggregate into clusters with higher In contents.     

异硫氰酸荧光素标记尿激酶的制备与性能研究

用异硫氰酸荧光素(FITC)对溶栓蛋白药物尿激酶(uPA)进行了荧光标记, 制备了荧光素标记的尿激酶(FITC-uPA), 经核磁谱及红外谱表征证实了反应能有效进行, 其荧光素/蛋白值(F/P)值为0.45. 尿激酶经荧光素标记后, 具有良好的荧光性质, 其荧光检测下限低达10-6 g?mL-1. 在1~100 ?g?mL-1范围内, 荧光强度与溶液浓度具有很好的线性关系, 可用于微/痕量蛋白质的定量/定性检测和跟踪标记. 荧光素标记后的尿激酶, 其流体力学直径与未标记的尿激酶基本一致, 其体外溶栓能力也与未标记的尿激酶相当, 说明FITC标记基本不影响尿激酶的生物活性, 是一种简单、有效的溶栓药物标记方法.