SiH2Cl2-NH3配比对a-SiNx:H薄膜PL峰的影响

低压化学气相沉积制备的纳米硅镶嵌结构的a-SiNx：H薄膜,在3．75eV的激光激发下,室温下发射1～3个高强度的可见荧光。在相同的沉积温度下（900℃）,选择不同的SiH2Cl2和NH3气体配比时,所得薄膜表现出不同的荧光属性,荧光峰的峰位和数目有着显著的变化。通过TEM、IR、XPS等分析手段对其原因进行了研究分析,认为不同配比下,生成的薄膜中缺陷态的种类和密度有所不同,这影响了其PL峰个数及其各峰的相对强弱。     

SiH_2Cl_2-NH_3配比对a-SiN_x∶H薄膜PL峰的影响

低压化学气相沉积制备的纳米硅镶嵌结构的a-S iNx∶H薄膜,在3.75 eV的激光激发下,室温下发射1~3个高强度的可见荧光。在相同的沉积温度下(900℃),选择不同的S iH2C l2和NH3气体配比时,所得薄膜表现出不同的荧光属性,荧光峰的峰位和数目有着显著的变化。通过TEM、IR、XPS等分析手段对其原因进行了研究分析,认为不同配比下,生成的薄膜中缺陷态的种类和密度有所不同,这影响了其PL峰个数及其各峰的相对强弱。     

RTA对氮化硅薄膜发光光谱的影响

在5.0eV的激光激发下，在室温下富硅的LPCVD氮化硅薄膜可发射六个PL峰，其峰位分别为2.97,2.77,2.55,2.32,2.10,1.9eV。经900－1100℃在N2气氛下快速退火（RTA）处理后，样品的六个PL峰变为3.1,2.0,2.85,2.6,2.36,2.2eV。本文对退火前后PL峰的产生和变化机制进行了初步探讨。     

镶嵌在氧化硅薄膜中纳米晶硅的可见光荧光谱与发光机制的研究

采用对非晶氧化硅薄膜退火处理方法，获得纳米晶硅与氧化硅的镶嵌结构．室温下观察到峰位为2.40eV光致发光．系统地研究了不同退火温度对薄膜的Raman谱、光荧光谱及光电子谱的影响．结果表明，荧光谱可分成两个不随温度变化的峰位为1.86和2.30eV的发光带．Si2p能级光电子谱表明与发光强度一样Si⁴⁺强度随退火温度增加而增加．Si平均晶粒大小为4.1—8.0nm，不能用量子限制模型解释蓝绿光的发射．纳米晶硅与SiO₂界面或SiO₂中与氧有关的缺陷可能是蓝绿光发射的主要原因 关键词：     

含纳米硅和纳米锗的氧化硅薄膜 光致发光的比较研究

分别以硅-二氧化硅和锗-二氧化硅复合靶作为溅射靶,采用磁控溅射技术在p型硅衬底上淀积了含纳米硅的氧化硅薄膜和含纳米锗的氧化硅薄膜.各样品分别在氮气氛中经过300至1100℃不同温度的退火处理.使用高分辨透射电子显微镜可以观察到经900和1100℃退火的含纳米硅的氧化硅薄膜中的纳米硅粒,和经900和1100℃退火的含纳米锗的氧化硅薄膜中的纳米锗粒.经过不同温度退火处理的含纳米硅的氧化硅和含纳米锗的氧化硅薄膜的光致发光谱均具有相似的峰型,且它们的发光峰位均位于580nm(2.1eV)附近.可以认为含纳米硅的氧化硅和含纳米锗的氧化硅薄膜的光发射主要来自于SiO     

含纳米硅和纳米锗的氧化硅薄膜光致发光的比较研究

分别以硅-二氧化硅和锗-二氧化硅复合靶作为溅射靶,采用磁控溅射技术在p型硅衬底上淀积了含纳米硅的氧化硅薄膜和含纳米锗的氧化硅薄膜.各样品分别在氮气氛中经过300至1100℃不同温度的退火处理.使用高分辨透射电子显微镜可以观察到经900和1100℃退火的含纳米硅的氧化硅薄膜中的纳米硅粒,和经900和1100℃退火的含纳米锗的氧化硅薄膜中的纳米锗粒.经过不同温度退火处理的含纳米硅的氧化硅和含纳米锗的氧化硅薄膜的光致发光谱均具有相似的峰型,且它们的发光峰位均位于580nm(2.1eV)附近.可以认为含纳米硅的氧化硅和含纳米锗的氧化硅薄膜的光发射主要来自于SiO₂层中发光中心上的复合发光,对实验结果进行了合理的解释     

C(膜)/Si(SiO2)(纳米微粒)/C(膜) 的光致发光性质研究

用直流辉光溅射法结合真空镀膜法制备出了一种“多层三明治结构”的光致发光材料—C(膜 ) /Si(SiO2 ) (纳米微粒 ) /C(膜 )夹层膜 ,然后分别在 40 0、6 5 0和 75 0℃退火 1h .在波长为 2 5 0nm的紫外光激发下 ,刚制备出来未经退火处理的样品具有一个在 398nm (3.12eV)处的紫光宽带PL1峰 .在 6 5 0℃退火后 ,又出现了一个在 36 0nm (3.44eV)附近的PL2 峰 .PL1和PL2 峰形状和峰位与退火温度和激发波长无关 ,但强度却与退火温度和激发波长密切相关 .结合形态结构分析可知 ,紫光PL1峰可用量子限制 -发光中心 (QC LCs)模型进行解释 :即光激发发生在SiO2 微粒内部 ,而光发射源于SiO2 与Si界面上的缺陷中心 .紫外荧光PL2 峰则源自SiC内部的电子 空穴复合发光     

LPCVD氮化硅薄膜室温高强度可见光发射

在５．０ｅＶ的激光激发下,在室温下ＬＰＣＶＤ氮化硅薄膜可发射高强度可见荧光,其峰位位置分别为２．９７,２．７７,２．５５,２．３２,２．１０和１．９０ｅＶ的六个ＰＬ峰,建立了其可见荧光发射的能隙态模型,并初步讨论了其发光机制．     

射频磁控共溅射GaAs/SiO2纳米颗粒镶嵌薄膜的光学性质

应用射频磁控共溅射方法和真空退火方法制备了GaAsSiO2纳米颗粒镶嵌薄膜.X射线衍射实验结果表明,经高温退火的薄膜中形成了面心立方闪锌矿结构的GaAs纳米晶粒,晶粒平均直径为1.5—3.2nm.吸收光谱展示了由于强量子限域引起的1.5—2eV的吸收边蓝移.室温光致荧光(PL)光谱显示了电子重空穴激子与电子劈裂空穴激子的近紫外和紫外双PL谱峰以及深俘获态的PL谱峰.对实验吸收边蓝移量与有效质量模型的蓝移量的悬殊差别、俘获态PL谱的形成以及PL谱线的特征作了解释.应用激光Z扫描技术测量了退火温度为500℃的复合膜在非共振条件下的光学非线性,结果表明,复合膜的非线性折射率系数和非线性吸收系数都比块材GaAs相应的系数增大了5个数量级.光学非线性系数增大主要起因于强量子限域效应 关键词： 射频磁控共溅射 GaAsSiO2纳米颗粒镶嵌薄膜 光谱 激光Z扫描     

镶嵌有纳米硅的SiN_x薄膜光致发光的温度依赖特性研究

采用对靶磁控溅射法在单晶硅衬底上沉积镶嵌有纳米硅的氮化硅薄膜,然后在形成气体FG(10%H2,90%N2)气氛中进行450℃常规热退火50min。通过荧光光谱仪测得的稳态/瞬态光致发光(PL)谱研究了镶嵌有纳米硅的氮化硅(SiNx)薄膜样品光致发光特性。结果表明,样品的发光过程可以归因于纳米硅的量子限制效应发光和与缺陷相关的发光。随着激发光能量的增加,PL谱峰位发生蓝移,表明较小粒度的纳米硅发光比例增加;温度的降低会抑制非辐射复合过程,提高辐射复合几率,因此发光寿命延长,发光强度呈指数增加;随着探测波长的减小,样品的发光寿命则明显缩短,表明纳米硅的量子限制效应发光对温度有很强的依赖性。     

Speckle characteristics of a broad-area VCSEL in the incoherent emission regime

We present a technique to reduce the speckle contrast of a NIR broad-area VCSEL based on the spatially incoherent emission regime that can be obtained when using the proper driving conditions. We evaluate the efficiency of this technique to reduce the speckle contrast by comparing it with the speckle characteristics in multimode emission under cw operation. Depending on the illumination setup, the incoherent emission regime can lead to a strongly reduced speckle contrast down to 1.3%. This is in agreement with estimates of the expected speckle contrast reduction when three contrast reducing effects are taken into account. These low contrast values make the investigated sources attractive for several applications that suffer from speckle noise.     

Structural characterization of ultrathin Cr and Sc films for soft X-ray mirrors

The structure of multilayers of ultrathin scandium (Sc) and chromium (Cr) films has been characterized by means of transmission electron microscopy (TEM). Face centered cubic Sc was found both in magnetron sputtered thin Sc layers on Si(0 0 1) and in Cr/Sc multilayers for soft X-ray mirrors. The single Sc and Cr layers are polycrystalline with randomly oriented grains, while Sc and Cr within the Cr/Sc multilayer show a strong [0 0 1] texture in the deposition direction. From high-resolution images the orientation-relationship at the Cr/Sc interfaces could be deduced as: Sc_[110]//Cr_[100] and Sc_[010]//Cr_[110], which was confirmed by image simulations.     

Optical transmission through an interface between subwavelength slits

This paper studies optical transmission through an interface between two slits with different widths in a sheet composed of an ideal conductor. Such a structure is of potential use in fabricating optical diode and may be the simplest one compared to other designs. Our calculations show that there is a critical wavelength. When the light wavelength is below the critical wavelength, the transmissivity is unidirectional. The expression of the stable transmissivity as a function of the ratio of the widths of the two slits was obtained analytically. Particularly, at the critical wavelength, the transmissivities are zero. This phenomenon has great potential for application in the manufacture of wavelength blockers.     

Effect of Ir(pq)2acac doping on CBP in phosphorescence organic light-emitting diodes

Doping is one of the most powerful methods amongst the various performance improvement ways. Doping affects the energy levels of the host layer by the energy level of the dopant. This allows the energy bandgap to be adjusted to a desired level and thus generates light corresponding to that energy level. Alternatively, it can act as an energy barrier between the interfaces to change the flow of carriers. In this study, the voltage dependences of undoped and doped devices were observed. Bis(2-phenylquinoline) iridium(III) (acetylacetonate) (Ir(pq)₂acac) was doped in 4,4′-N, N′-dicarbazole-biphenyl (CBP) as the emission layer. The light intensity changes with the doping concentration, and the efficiency was also studied. When a high voltage was applied, the effect of triplet-triplet annihilation (TTA) adversely affected the electron-hole recombination. We analyzed the optimal operating conditions and the effect of doping concentration on OLEDs.     

XYZ particles at Belle

In this paper, I review recent progress in the study of the XYZ particles at Belle. I only focus on studies with charmonium and one or more light mesons in the final states. This covers the X(3872), X(3915),Y(4140), X(4350), and the charged Z states.     

Grain boundary potential and charge density at grain boundaries of chemically prepared thin silver sulfide films

The grain boundary potential and interface state charge density at the grain boundaries of silver sulfide (Ag₂S) thin films prepared by chemical conversion of cadmium sulfide (CdS) films have been determined from the dc resistance of the material and are found to be sensitive to annealing. A reduction in the grain boundary potential and the grain boundary charge density of the film has been noticed when the source CdS film is annealed at different temperatures prior to chemical conversion. The variation in the grain boundary charge density of the grown Ag₂S film with source annealing temperature has been found to be similar to that of thin cadmium sulfide film, reported earlier. An additional low temperature heat treatment of the sample results in an enhancement in the charge density at the grain boundaries. The change in the silver vacancy and/or oxygen and sulfur content of the films as revealed from the energy dispersive spectra of the films suggests possible role of film composition on the grain boundary charge density.     

三螺旋DNA分子Poly(dT)·Poly(dA)·Poly(dT)碱基振动模式

利用晶格动力学方法计算了三螺旋 DNA分子 poly(d T)· poly(d A)· poly(d T)碱基振动模式 ,并根据势能分布矩阵对碱基振动模式进行了指定。计算的模式频率同拉曼光谱实验相符合     

Effect of swift heavy ion irradiation on photoluminescence properties of ZnO/PMMA nanocomposite films

We report a study on the SHI induced modifications on structural and optical properties of ZnO/PMMA nanocomposite films. The ZnO nanoparticles were synthesized by the chemical route using 2-mercaptoethanol as a capping agent. The structure of ZnO nanoparticles was confirmed by XRD, SEM and TEM. These ZnO nanoparticles were dispersed in the PMMA matrix to form ZnO/PMMA nanocomposite films by the solution cast method. These ZnO/PMMA nanocomposite films were then irradiated by swift heavy ion irradiation (Ni⁸⁺ ion beam, 100 MeV) at a fluence of 1×10¹¹ ions/cm². The nanocomposite films were then characterized by XRD, UV-vis absorption spectroscopy and photoluminescence spectroscopy. As revealed from the absorption spectra, absorption edge is not changed by the irradiation but the optical absorption is increased. Enhanced green luminescence at about 527 nm and a less intense blue emission peak around 460 nm were observed after irradiation with respect to the pristine ZnO/PMMA nanocomposite film.     

Belle实验观测到新类粲偶素结构

利用在Υ(nS)(n=1,2,4,5)共振态及其附近采集的大量数据,Belle实验测量了末态中含两个矢量粒子的双光子过程γγ→J/ψ和ωJ/ψ.在这两个过程中,发现了两个窄共振结构X(4350)和X(3915).这两个新结构的性质目前尚不清楚,可能是普通粲偶素粒子,也可能是含一对粲夸克和一对轻夸克的四夸克态,或含一对粲夸克和一个激发胶子的混杂态,或是由其他未知的动力学原因造成的奇特结构.Belle同时发现在γγ→J/ψ过程中,不存在显著的Y(4140)的信号,实验结果与将Y(4140)解释为四夸克态的部分理论预期有较大差异.     

The effect of phonon anisotropic scattering on the thermal conductivity of silicon thin films at 300K and 400K

Previous studies have shown that anisotropy in phonon transport exist because of the difference in phonon dispersion relation due to different lattice directions, as observed by a difference in in-plane and cross-plane thermal conductivities. Our current work intends to study the effect of anisotropy scattering on silicon thermal conductivity at 300 K and 400 K. We adopt the Henyey and Greenstein probability density function in our phonon Monte Carlo simulation to investigate the effect of highly forward and backward scattering events. The impact of applying the anisotropy scattering using this approach is discussed in detail. While the forward and backward scattering will increase and decrease thermal conductivity respectively, the extent of the effect is non-linear such that forward scattering has a more obvious effect on thermal conductivity than backward scattering.