The effect of phonon anisotropic scattering on the thermal conductivity of silicon thin films at 300K and 400K |
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| Institution: | 1. Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l’Environnement, Faculté des Sciences de Gabès, Université de Gabes, cité Erriadh, 6079 Gabès, Tunisia;2. Laboratoire de Physico-Chimie des Matériaux, Département de Physique, Faculté des Sciences de Monastir, Université de Monastir, B. P. 22, 5019 Monastir, Tunisia;1. Department of Physics, Dalian Maritime University, Dalian, Liaoning 116026, PR China;2. School of Science, Liaoning University of Technology, JinZhou 121001, PR China;3. Key Laboratory of Photo-Electronic Materials, Ningbo University, Ningbo, Zhejiang 315211, PR China;1. Departamento de Física Aplicada I, Escuela Técnica Superior de Ingeniería, Universidad del País Vasco, Alameda Urquijo s/n 48013, Bilbao, Spain;2. Institute for Solid State Physics and Chemistry, Uzhgorod University, 88000 Uzhgorod, Ukraine |
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| Abstract: | Previous studies have shown that anisotropy in phonon transport exist because of the difference in phonon dispersion relation due to different lattice directions, as observed by a difference in in-plane and cross-plane thermal conductivities. Our current work intends to study the effect of anisotropy scattering on silicon thermal conductivity at 300 K and 400 K. We adopt the Henyey and Greenstein probability density function in our phonon Monte Carlo simulation to investigate the effect of highly forward and backward scattering events. The impact of applying the anisotropy scattering using this approach is discussed in detail. While the forward and backward scattering will increase and decrease thermal conductivity respectively, the extent of the effect is non-linear such that forward scattering has a more obvious effect on thermal conductivity than backward scattering. |
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| Keywords: | semiconductor (A) Phonons (D) Thermal conductivity (D) Transport properties (D) |
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