SiH_2Cl_2-NH_3配比对a-SiN_x∶H薄膜PL峰的影响

低压化学气相沉积制备的纳米硅镶嵌结构的a-S iNx∶H薄膜,在3.75 eV的激光激发下,室温下发射1~3个高强度的可见荧光。在相同的沉积温度下(900℃),选择不同的S iH2C l2和NH3气体配比时,所得薄膜表现出不同的荧光属性,荧光峰的峰位和数目有着显著的变化。通过TEM、IR、XPS等分析手段对其原因进行了研究分析,认为不同配比下,生成的薄膜中缺陷态的种类和密度有所不同,这影响了其PL峰个数及其各峰的相对强弱。     

退火处理对YMnO3薄膜的结构和荧光性能的影响

室温下,采用脉冲激光沉积方法在Si(100)衬底上制备了YMnO3薄膜,并对其进行了不同温度的退火处理。采用X射线衍射和荧光光谱分析方法对薄膜的结构和荧光特性进行了研究。结果表明:通过退火处理,可以得到正交相和六方相共存的多晶态YMnO3薄膜,并且随着退火温度的升高,两相的比例发生变化,由正交相为主转变为六方相为主。YMnO3薄膜样品的荧光发射峰集中在波长430～620nm范围内,可能是由Mn3 离子从5T2到5E之间的能级跃迁所引起的。其荧光强度随着退火温度的升高逐渐增强,但峰位基本保持不变,说明薄膜结构的改变对Mn3 离子的能级跃迁几率有明显的影响,对能级位置的影响不大;而且荧光光谱还显示在同一薄膜中各个荧光峰的相对强度随着退火温度的变化不大。     

紫外Sc_2O_3薄膜的光学和结构性能表征及其激光作用下的损伤机理

利用电子束蒸发方法,在不同沉积温度(50~350℃)下制备了Sc2O3薄膜。分别用分光光度计,小角掠入射X射线衍射仪和轮廓仪测试了薄膜样品的光谱、微结构和表面粗糙度信息,并用薄膜分析软件Essential Macleod计算了Sc2O3薄膜的折射率和消光系数。结果表明:随着沉积温度升高,Sc2O3薄膜结晶程度增强,晶粒尺寸增大,且较高的沉积温度有利于获得较高的折射率。最后用355 nm,8 ns的三倍频Nd:YAG激光器测试了其激光损伤阈值(LIDT),最大值为2.6 J/cm2,且阈值与薄膜的消光系数、表面粗糙度、光学损耗均呈现相反的变化趋势。用光学显微镜和扫描电子显微镜表征了该薄膜的破坏形貌,详细分析了薄膜在不同激光能量作用下破坏的发展过程,以及Sc2O3薄膜在355 nm紫外激光作用下LIDT与制备工艺的关系,重点分析了355 nm激光作用下薄膜的破坏机理。     

氧、氮掺杂非晶硅基薄膜的荧光

采用PECVD方法分别沉积了SiOx:H和SiOxNy:H薄膜,测量了其荧光特性。在SiOx:H薄膜中观察到300－570nm强荧光辐射带,并发现其中心位置随着氧含量的增加而红移的现象,在合适的氧含量条件下,荧光带主峰位于蓝光波段,并具有分立峰结构,在SiOxNy:H薄膜中,荧光谱由250－400nm,500-700nm两个荧光带和370nm,730nm两组分立荧光峰组成。分立峰强度随薄膜中的氮含量增加而升高,荧光带中心位置受到沉积过程中氢的流量调制,当氢流量增加时,发射带的中心位置产生蓝移。     

氧分压对Mg掺杂ZnO薄膜结晶质量和光学特性的影响

利用脉冲激光沉积技术,通过改变沉积过程中的氧气压力,在蓝宝石(0001)基片上制备了一系列ZnMgO合金.通过X射线衍射、反射和透射光谱以及室温和变温荧光光谱,对薄膜的结构和光学性能进行了系统地表征,分析了工作气压对ZnMgO合金薄膜的结晶质量及光学特性的影响.研究结果表明:随着沉积环境中氧气压力的增大,ZnMgO薄膜的结晶质量下降,富氧环境下,与蓝宝石晶格平行的ZnO晶粒的出现是导致薄膜结晶质量下降的主要原因;相对于本征ZnO,不同氧气环境下沉积的ZnMgO薄膜的紫外荧光峰均出现了不同程度的蓝移.随着工 关键词： ZnO Mg掺杂 脉冲激光沉积 薄膜生长 光学特性     

表面等离激元对氮化硅薄膜中Tb3+离子荧光寿命的影响

利用等离子增强化学气相沉积和离子注入方法,制备了铽掺杂的氮化硅薄膜,然后利用磁控溅射和热处理工艺在薄膜上沉积了不同颗粒尺寸的银薄膜来研究表面等离激元共振对铽离子荧光寿命的影响.实验结果表明氮化硅中Tb³⁺离子的光致荧光最强峰在547 nm,而银薄膜的存在会明显降低稀土离子Tb³⁺的荧光寿命,其寿命的改变是由于银薄膜的表面等离激元改变了电磁场的分布,从而影响了系统的局域光模密度(PMD),理论计算的结果也验证了这一点.     

Si基CeO_2薄膜的发光特性

利用电子束蒸发技术在p型硅衬底上沉积了200 nm厚的CeO2薄膜样品,将样品置于弱还原气氛中高温退火后,观察到薄膜在385,418 nm以及445 nm左右出现三个明显的发光峰。结合激发光谱、吸收光谱以及XRD分析表明:CeO2薄膜在高温下容易发生失氧反应,出现Ce4+→Ce3+离子转变,Ce3+离子在紫外光的激发下,电子由O2p跃迁到5d能级,再由5d能级向4f能级跃迁,从而产生强烈的蓝紫外发射,而445 nm左右的发光峰则来自于SiO2薄膜的缺陷发光。样品选择900~1 200℃不同温度退火,并且在1 200℃下进行了不同时间的退火。研究结果显示:在1 200℃下进行2 h的退火,薄膜发光强度达到最大。     

Sb_2Te_3热电薄膜的离子束溅射制备与表征

采用离子束溅射技术交替沉积Sb-Te-Sb多层薄膜后进行高真空热处理,直接制备Sb2Te3薄膜.利用X射线衍射(XRD)仪、霍尔系数测试仪、薄膜Seebeck系数测量系统对所制备的薄膜特性进行表征.XRD测量结果显示,薄膜的主要衍射峰与Sb2Te3标准衍射峰相同,在[101]/[012]晶向取向明显,存在较多的Te杂质峰;霍尔系数测试结果表明,薄膜为p型半导体薄膜,薄膜电阻率较低,其电导率接近于金属电导率,载流子浓度量级为1023cm-3,具有良好的电学性能;Seebeck系数测量结果显示,薄膜具有良好的热电性能,在不同条件下制备的薄膜的Seebeck系数在7.8—62μV/K范围;在所制备的薄膜中,退火时间为6h、退火温度为200℃的薄膜其Seebeck系数达到最大,约为62μV/K,且电阻率最小.     

含氮氟化类金刚石(FN-DLC)薄膜的研究:(Ⅰ)sp结构与化学键分析

以CF4,CH4和N2为源气体,利用射频等离子体增强化学气相沉积法,在不同功率下制备了含氮氟化类金刚石膜.用俄歇电子能谱、拉曼光谱、X射线光电子能谱和傅里叶变换红外光谱对薄膜的电子结构和化学键进行了表征,并结合高斯分峰拟合方法分析了薄膜中sp2,sp3结构比率.结果表明,制备的薄膜属于类金刚石结构,不同沉积功率下,薄膜内的sp2/sp3值在2.0—9.0之间,随着沉积功率的增加薄膜内sp2的相对含量增加.膜内主要有C—Fx(x=1,2),C—C,CC和CN等化学键.沉积功率增加,C—C基团增加,膜内F的浓度降低,C—F基团减少,薄膜的关联加强,稳定性提高.     

O2流量对磁控溅射N掺杂TiO2薄膜成分及晶体结构的影响

利用直流脉冲磁控溅射方法在室温下通过改变O₂流量制备具有不同晶体结构的N掺杂TiO₂薄膜,利用台阶仪、X射线光电子能谱仪、X射线衍射仪、紫外-可见分光光度计等设备对薄膜沉积速率、化学成分、晶体结构、禁带宽度等进行分析.结果表明:所制备的薄膜元素配比约为TiO_1.68±0.06N_0.11±0.01,N为替位掺杂,所有样品退火前后均未形成Ti—N相结构,N掺杂TiO₂薄膜的沉积速率、晶体结构等主要依赖于O₂流量.在O₂流量为2 sccm时,N掺杂TiO₂薄膜沉积速率相对较高,薄膜为非晶态结构,但薄膜内含有锐钛矿(anatase)和金红石(rutile)相晶核,退火后薄膜呈anatase和rutile相混合结构,禁带宽度仅为2.86 eV.随着O₂流量的增加,薄膜沉积速率单调下降,退火后样品禁带宽度逐渐增加.当O₂流量为12 sccm时,薄膜为anatase相择优生长,退火后呈anatase相结构,禁带宽度为3.2 eV.综合本实验的分析结果,要在室温条件下制备晶态N掺杂TiO₂薄膜,需在高O₂流量(＞10 sccn)条件下制备. 关键词： 2薄膜')" href="#">N掺杂TiO₂薄膜 磁控溅射 化学配比 晶体结构     

Magnetic ordering in HoRu2Si2, HoRh2Si2, TbRh2Si2 and TbIr2Si2 by neutron diffraction

Neutron diffraction study of polycrystalline HoRu₂Si₂, HoRh₂Si₂, TbRh₂Si₂, and TbIr₂Si₂ was performed in the temperature range between 4.2 and 300 K. For HoRu₂Si₂ the magnetic spin alignment of a linear transverse wave mode below the Néel temperature 19 K is observed. This static moment wave is propagating along the b-axis with k=(0, 0.2, 0) and is polarized in the c-axis. The root-mean-square and maximum saturation moments per Ho atom are 9.26 and 13.09μ_B, respectively. HoRh₂Si₂, TbRh₂Si₂ an TbIr₂Si₂ are simple collinear antiferromagnets of +-+- type with Néel temperatures of (27±1), (98±2) and (72±3) K, respectively. For TbRh₂Si₂ and TbIr₂Si₂ magnetic moments are localized on RE ions only and are aligned along the tetragonal axis, while for HoRh₂Si₂ they form an angle ø = (28±3)°.     

μ+SR study of LaNi2As2, URh2Si2 and CeRh2Si2

Muon spin relaxation experiments have been carried out in the paramagnetic and magnetically ordered states of URh₂Si₂ and CeRh₂Si₂. As the magnetic structure of these compounds is well known, these measurements can help to characterise their magnetic properties probed by μSR and to understand the μSR results of the heavy fermion compounds of the same crystallographic family. Our measurements show that the muons occupy two different crystallographic sites. The spectra of URh₂Si₂ and CeRh₂Si₂ in the magnetically ordered states are very different, probably reflecting their different magnetic structures. The spectra obtained on CeRh₂Si₂ are similar to the published spectra of the heavy fermion compound CeCu_2.1 Si₂. Muon spin rotation measurements on LaNi₂As₂ indicate that the muon is diffusing at 150 K.     

13C-selective IRMPD of CBr2F2/Cl2 and CCl2F2/Br2 systems

The CO₂ TEA laser irradiation of CBr₂F₂ in the presence of Cl₂ yielded ¹³C-enriched CBrClF₂ and ¹³C-enriched CCl₂F₂ under selected experimental conditions. As the photolysis proceeded, the ¹³C concentration of CBrClF₂ decreased gradually and that of CCl₂F₂ increased up to 90% or higher. These results can be explained by the mechanism involving the secondary ¹³C-selective IRMPD of the primary product CBrClF₂. On the other hand, the carbon-containing product for a CCl₂F₂/Br₂ system was only CBrClF₂; the further IRMPD of which probably regenerated CBrClF₂ in the presence of Br₂. The decomposition probabilities of ¹²C- and ¹³C-containing molecules in both systems were measured as functions of laser line, laser fluence, and reactant pressures.     

Superconductivity in LaPd_2Bi_2 with CaBe_2Ge_2-type structure

正Since the discovery of superconductivity in LaFeAsO_(1-x)F_x,the high-T_c iron-based superconductors have been extensively studied from both experimental and theoretical viewpoints [1-8]. However, the mechanism of the unconventional superconductivity is still to be resolved. To     

Magnetostriction of SmMn2Ge2 and GdMn2Ge2 intermetallic compounds

Longitudinal and transverse magnetostrictions of polycrystalline samples of intermetallic compounds RMn₂Ge₂ (R=Sm or Gd) are measured in pulsed magnetic fields up to 250 kOe. It is found that linear magnetostrictive strains of about 10^?3 arise in a temperature range in which the magnetic field causes a change in the magnetic state of a manganese magnetic subsystem. The results obtained are described within the model of a two-sublattice ferrimagnet with a negative exchange interaction in the manganese subsystem in terms of a strong dependence of this interaction on interatomic distances.     

Polar optic phonons in Hg2Cl2 and Hg2Br2

Far infrared (30–430 cm^?1) reflectivity measurements of Hg₂Cl₂ and Hg₂Br₂ single crystals have been performed in polarized light. The spectra, which are in agreement with group-theoretical predictions, were analyzed by the oscillator fitting procedure and Kramers-Kronig method. The results are compared with the existing data from other measurements and the large anisotropy of polar modes is briefly discussed. The polarization vectors of all long-wavelength symmetry modes were determined group-theoretically.     

(NH_2CH_2COOH)_2CdCl_2晶体的拉曼光谱的研究

（ＮＨ２ＣＨ２ＣＯＯＨ）２ＣｄＣｌ２晶体的拉曼光谱的研究刘建军吴粤郑吉民扈士芬蓝国祥（南开大学天津３０００７１）ＲａｍａｎＳｐｅｃｔｒａｏｆ（ＮＨ２ＣＨ２ＣＯＯＨ）２ＣｄＣｌ２ＣｒｙｓｔａｌｓＬｉｕＪｉａｎｊｕｎ，ＷｕＹｕｅ，ＺｈｅｎｇＪｉｍｉｎ，Ｈ...