| LPCVD氮化硅薄膜室温高强度可见光发射 |
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| 引用本文： | 刘渝珍,石万全.LPCVD氮化硅薄膜室温高强度可见光发射[J].发光学报,1999,20(1):37-40. |
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| 作者姓名： | 刘渝珍 石万全 |
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| 作者单位： | 中国科学技术大学研究生院，中国科学院微电子研究中心 |
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| 基金项目： | 中国科学技术大学研究生院院长择优基金 |
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| 摘 要： | 在５．０ｅＶ的激光激发下，在室温下ＬＰＣＶＤ氮化硅薄膜可发射高强度可见荧光，其峰位位置分别为２．９７，２．７７，２．５５，２．３２，２．１０和１．９０ｅＶ的六个ＰＬ峰，建立了其可见荧光发射的能隙态模型，并初步讨论了其发光机制．
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| 关 键 词： | LPCVD，氮化硅薄膜，可见荧光 |
LUMINESCENCE FROM SILICON NITRIDE FILM BY LPCVD |
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| Liu Yuzhen Shi Wanquan Liu Shixiang Yao Decheng Liu Jinlong Han Yiqin Zhao Lingli,a,Sun Baoyin,a,Ye Tianchun,a,Chen Mengzhen,a.LUMINESCENCE FROM SILICON NITRIDE FILM BY LPCVD[J].Chinese Journal of Luminescence,1999,20(1):37-40. |
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| Authors: | Liu Yuzhen Shi Wanquan Liu Shixiang Yao Decheng Liu Jinlong Han Yiqin Zhao Lingli a Sun Baoyin a Ye Tianchun a Chen Mengzhen a |
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| Abstract: | At 5.0eV laser excitation, six luminescence emission bands of LPCVD silicon nitride film were observed corresponding to 2.97, 2.77, 2.55, 2.32, 2.10 and 1.90eV respectively. Reports on the gap state model of LPCVD silicon nitride film have been made by this paper. The origin of these emission bands are discussed. |
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| Keywords: | LPCVD silicon nitride film luminescence |
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