The crystal structures and physical properties of the solid solution compound Ba5Y8-xMn4021-1.5x （x = 0, 1）

New oxometallides with the formula Ba5Y8-xMn4021-1.5x （x = 0, 1） are prepared through an atmosphere-controlled solid-state reaction. Two single-phase samples with Ba/Y/Mn atomic ratios 5/8/4 （Y8） and 5/7/4 （Y7） are obtained. The crystal structures and the physical properties of the compounds are investigated by X-ray powder diffraction, magnetization, conductivity, and dielectricity measurements. The Ba5Y8-xMn4021-1.5x compound is demonstrated to be a Y-deficient solid solution. The solid solution compound Ba5Y8-xMn4021-1.5x crystallizes into tetragonal symmetry with the space group I4/m. Detailed structure analysis by Rietveld refinement of the X-ray powder diffraction data reveals that the Y vacancies occur preferentially at the Y（2） site. Thermal magnetization measurements indicate the presence of antiferromagnetic interaction between Mn ions in the compounds, and temperature-dependent resistivity measurements show that insulator-semiconductor transitions occur around 175 K and 170 K for the Y8 and Y7 samples, respectively. Strong frequency dependences of the dielectric constant are observed above -175 K for the two compounds.     

Preparation and study on performance of submicron nickel powder for multilayer chip positive temperature coefficient resistance

Base metal nickel is often used as the inner electrode in multilayer chip positive temperature coefficient resistance (PTCR).The fine grain of ceramic powders and base metal nickel are necessary.This paper uses reducing hydrazine to gain submicron nickel powder whose diameter was 200-300 nm through adjusting the consumption of nucleating agent PVP properly.The submicron nickel powder could disperse well and was fit for co-fired of multilayer chip PTCR.It analyes the submicron nickel powder through x-ray Diffraction (XRD) and calculates the diameter of nickel by PDF cards.Using XRD analyses it obtains several conclusions:If the molar ratio of hydrazine hydrate and nickel sulfate is kept to be a constant,when enlarging the molar ratio of NaOH/Ni 2+,the diameter of nickel powder would become smaller.When the temperature in the experiment raises to 70-80 C,nickel powder becomes smaller too.And if the molar ratio of NaOH/Ni 2+ is 4,when molar ratio of (C 2 H 5 O) 2 /Ni 2+ increases,the diameter of nickel would reduce.Results from viewing the powders by optical microscope should be the fact that the electrode made by submicron nickel powder has a better formation and compactness.Furthermore,the sheet resistance testing shows that the electrode made by submicron nickel is smaller than that made by micron nickel.     

Tuning Exchange Anisotropy of Exchange-Biased System

Exchange anisotropy in FM/AFM bilayers has given a lot of static magnetization properties such as enhanced coercivity and magnetization loop shifts. These phenomena are primarily from the effective anisotropies introduced into a ferromagnet by exchange coupling with a strongly anisotropic antiferromagnet. These effective anisotropies can also be used to explain the dynamic consequences of exchange-biased bilayers. In this article, the dynamic consequences such as exchange-induced susceptibility, exchange-induced permeability, and the corresponding domain wall characteristics in the exchange-biased structures of ferromagnet/antiferromagnetl/antiferromagnet2 are studied. The results show that the second antiferromagnetic layer can largely affect the dynamic consequences of exchange-blazed bilayers. Especially in the case of critical temperature, the effects become more obvious. Practically, the exchange anisotropy of biased bilayer system can be tuned by exchange coupling with the second antiferromagnetic layer.     

Enhanced ferroelectricity and ferromagnetism in Bio.9Bao. 1FeO3/Laz/3Srl/3MnO3 heterostructure grown by pulsed laser deposition

Bi0.9Ba0.lFeO3 （BBFO）/La2/3Srl/3MnO3 （LSMO） heterostructures are fabricated on LaA103 （100） substrates by pulsed laser deposition. Giant remnant polarization value （~ 85 μC/cm2） and large saturated magnetization value （~ 12.4 emu/cm3） for BBFO/LSMO heterostructures are demonstrated at room temperature. Mixed ferroelectric domain structures and low leakage current are observed and in favor of enhanced ferroelectrie properties in the BBFO/LSMO het- erostructures. The magnetic field-dependent magnetization measurements reveal the enhancement in the magnetic moment and improved magnetic hysteresis loop originating from the BBFO/LSMO interface. The heterostructure is proved to be effective in enhancing the ferroelectric and ferromagnetic performances in multiferroic BFO films at room temperature.     

Charmonium results from BES

Using ～ 14 × 10^6 ψ（2S） and ～ 58 × 10^ J/ ψ data collected at BES Ⅱ/BEPC, the branching fraction of ψ（2S）→Ω-Ω^＋ is measured with about 5a statistical significance. The A electric dipole and ∧ decay parameter are studied using the decay J/ψ →∧∧→ ppπ^＋π^-. Using （106±3）× 10^6 ψ（2S） decays collected at BESⅢ/BEPC Ⅱ, we have obtained some interesting physics results. The branching fractions of XcJ→π^0π^0, ηη are measured with precision improved. The mass and width of he（l^1P1） state, together with the branching fractions of Br（ψ（2S） →π^0hc） and Br（hc →γηc） are the first measurements. Surprisingly, the decays of Xc1→φφ, ωω, and ωφ are firstly observed in BESⅢ data.     

Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

In order to investigate of cobalt-doped interracial polyvinyl alcohol （PVA） layer and interface trap （Dit） effects, A1/p- Si Schottky barrier diodes （SBDs） are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carded out in the frequency and voltage ranges of 30 kHz-300 kHz and -5 V-6 V, respectively. C-V or er-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance （Rs）, and interfacial layer. Both the real and imaginary parts of dielectric constant （er and err） and electric modulus （Mr and Mrr）, loss tangent （tan~）, and AC electrical conductivity （aac） are investigated, each as a function of frequency and applied bias voltage. Each of the M~ versus V and Mrr versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance （C） and conductance （G/w） values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of A1/Co-doped PVA/p-Si （MPS） type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance （CLF-CHF） method.     

About detecting CP-violating processes in J/ψ→ K^0K^-0 decay

Abstract Questions about detecting the CP-violating decay process of J/ψ→ K^0K^-0→ KsKs are discussed. Possible background and material regeneration effects are analyzed. The discussion can be directly extended to other vector quarkonium decays, like γ, ψ（2S） and Ф → KsKs.     

Feasibility study of a J/ψ cross section measurement with early CMS data

We report the methods and plans for measuring the differential cross section of J/ψ→μ^＋μ^- production, using data to be collected in the first LHC run by the CMS detector. Making use of the large B-hadron lifetime, we show how to separate the promptly produced J/ψ’s from those coming from B-hadron decays. Since the J/ψ production cross section is expected to be large, the analysis should be viable with relatively small data sets, that will become available early in the startup of the LHC. We also address effects of a non-perfect detector alignment, as well as systematic uncertainties. About 70 thousand J/ψ decays are reconstructed from Monte Carlo data, which corresponds to an integrated luminosity of 3 pb^-1 in 14 TeV collisions, in the range of pT^J/ ψbetween 5 and 40 GeV/c. The precision of the result is limited by systematic uncertainties, and is at the 15% level.     

Global dynamical analysis of vibrational manifolds of HOCl and HOBr under anharmonicity and Fermi resonance:the dynamical potential approach

The vibrational dynamics of HOCl and HOBr between bending and OCl/OBr stretching coordinates with anharmonicity and Fermi coupling is studied with the classical dynamical potential approach. The quantal vibrational dynamics is mostly mapped out by the classical nonlinear variables such as fixed points, except for the state energies, which are quantized. This approach is global in the sense that the focus is on a set of levels instead of individual ones. The dynamics of HOBr is demonstrated to be less complicated. The localized modes along the OCl/OBr stretching coordinates are also shown to have O-Br bonds more prone to dissociation.     

Breakdown characteristics of AIGaN/GaN Schottky barrier diodes fabricated on a silicon substrate

In this work, the breakdown characteristics of AlGaN/GaN planar Schottky barrier diodes （SBDs） fabricated on the silicon substrate are investigated. The breakdown voltage （BV） of the SBDs first increases as a function of the anodeto-cathode distance and then tends to saturate at larger inter-electrode spacing. The saturation behavior of the BV is likely caused by the vertical breakdown through the intrinsic GaN buffer layer on silicon, which is supported by the post-breakdown primary leakage path analysis with the emission microscopy. Surface passivation and field plate termination are found effective to suppress the leakage current and enhance the BV of the SBDs. A high BV of 601 V is obtained with a low on-resistance of 3.15 mΩ·cm^2.     

Kinetics of Infection-Driven Growth Model with Birth and Death

We propose a two-species infection model, in which an infected aggregate can gain one monomer from a healthy one due to infection when they meet together. Moreover, both the healthy and infected aggregates may lose one monomer because of self-death, but a healthy aggregate can spontaneously yield a new monomer. Consider a simple system in which the birth/death rates are directly proportional to the aggregate size, namely, the birth and death rates of the healthy aggregate of size k are J1 k and J2k while the self-death rate of the infected aggregate of size k is J3k. We then investigate the kinetics of such a system by means of rate equation approach. For the J1 〉 J2 case, the aggregate size distribution of either species approaches the generalized scaling form and the typical size of either species increases wavily at large times. For the J1 = J2 case, the size distribution of healthy aggregates approaches the generalized scaling form while that of infected aggregates satisfies the modified scaling form. For the J1 〈 J2 case, the size distribution of healthy aggregates satisfies the modified scaling form, but that of infected aggregates does not scale.     

Micromagnetic simulation of Sm–Co/α-Fe/Sm–Co trilayers with various angles between easy axes and the film plane

Hysteresis loops and energy products have been calculated systematically by a three-dimensional(3D) software OOMMF for Sm–Co/α-Fe/Sm–Co trilayers with various thicknesses and β, where β is the angle between the easy axis and the field applied perpendicular to the film plane. It is found that trilayers with a perpendicular anisotropy possess considerably larger coercivities and smaller remanences and energy products compared with those with an in-plane anisotropy.Increase of β leads to a fast decrease of the maximum energy product as well as the drop of both remanence and coercivity. Such a drop is much faster than that in the single-phased hard material, which can explain the significant discrepancy between the experiment and the theoretical energy products. Some modeling techniques have been utilized with spin check procedures performed, which yield results in good agreement with the one-dimensional(1D) analytical and experimental data, justifying our calculations. Further, the calculated nucleation fields according to the 3D calculations are larger than those based on the 1D model, whereas the corresponding coercivity is smaller, leading to more square hysteresis loops and better agreement between experimental data and the theory.     

Characterization of tetragonal distortion in a thick Al0.2Ga0.8N epilayer with an AIN interlayer by Rutherford backscattering/channeling

An Al0.2Ga0.8N/AlN/Al0.2Ga0.8N heterostructure was grown by metalorganic chemical vapor deposition on a sapphire （0001） substrate with a thick （〉 1 μm） GaN intermediate layer. The Al composition was determined by Rutherford backscattering （RBS）. Using the channeling scan around an off-normal [1213] axis in the （1010） plane of the Al0.2Ga0.8N layer, the tetragonal distortion eT, which is caused by the elastic strain in the epilayer, is investigated. The results show that eT in the high-quality Al0.2Ga0.8N layer is dramatically released by the AIN interlayer from 0.66% to 0.27%.     

Thermal Phase in Bubbling Geometries

We use matrix model to study thermal phase in bubbling half-BPS type liB geometries with SO（4） × SO（4） symmetry. Near the horizon limit, we find that thermal vacua of bubbling geometries have disjoint parts, and each part is one kind of phase of the thermal system. We connect the thermal dynamics of bubbling geometries with one-dimensional fermions thermal system. Finally, we try to give a new possible way to resolve information loss puzzle.     

Studies of dE/dx measurements with the BESⅢ

The Beijing Spectrometer Ⅲ（BESⅢ）is a general-purpose detector used for the study of τ-charm physics at the Beijing Electron-Positron Collider Ⅱ（BEPC Ⅱ）.This paper presents our studies of the dE/dx measurement in the drift chamber of BESⅢ,which is important for the identification of charged particles.Corrections applied to the dE/dx measurement in data reconstruction are discussed.After our current dE/dx calibration,a resolution of about 6% has been obtained for minimum ionization particles,and a 3σ K/πseparation is obtained for momenta up to 760 MeV/c.These results meet the design goals of the BESⅢ drift chamber.     

Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AIInGaN superlattice electron blocking layer

InGaN/AIlnGaN superlattice （SL） is designed as the electron blocking layer （EBL） of an InGaN/GaN-based light- emitting diode （LED）. The energy band structure, polarization field at the last-GaN-barrier/EBL interface, carrier concen- tration, radiative recombination rate, electron leakage, internal quantum efficiency （IQE）, current-voltage （l-V） perfor- mance curve, light output-current （L-l） characteristic, and spontaneous emission spectrum are systematically numerically investigated using APSYS simulation software. It is found that the fabricated LED with InGaN/AIInGaN SL EBL exhibits higher light output power, low forward voltage, and low current leakage compared with those of its counterparts. Meanwhile, the efficiency droop can be effectively mitigated. These improvements are mainly attributed to the higher hole injection efficiency and better electron confinement when InGaN/AIlnGaN SL EBL is used.     

Optical and magnetic properties of InFeP layers prepared by Fe~+ implantation

InFeP layers are prepared by ion implantation of InP with 100-keV Fe＋ ions to a dose of 5 ×10^16 cm-2 and investigated by optical, magnetic, and ion beam analysis measurements. Photoluminescence measurements show a deep-level peak at 1.035 eV due to Fe in InP and two exciton-related luminescences at 1.426 eV and 1.376 eV in the implanted samples annealed at 400℃. Conversion electron Mossbauer spectroscopy reveals a doublet corresponding to Fe3＋ ions in the indium sites. Atomic force microscopy and magnetic force microscopy show that magnetic clusters are formed in the annealing process. The magnetization-field hysteresis loops show ferromagnetic properties persisting up to room temperature with a coercive field of 100 0e （10e = 79.5775 A-m-1）, saturation magnetization of 4.35 × 10-5 emu, and remnant magnetization of 4.4× 10 6 emu.     

An improved EEHEMT model for kink effect on AIGaN/GaN HEMT

In this paper, a new current expression based on both the direct currect （DC） characteristics of the A1GaN/GaN high election mobility transistor （HEMT） and the hyperbolic tangent function tanh is proposed, by which we can describe the kink effect of the A1GaN/GaN HEMT well. Then, an improved EEHEMT model including the proposed current expression is presented. The simulated and measured results of Ⅰ-Ⅴ, S-parameter, and radio frequency （RF） large-signal characteristics are compared for a self-developed on-wafer A1GaN/GaN HEMT with ten gate fingers each being 0.4-μm long and 125-p-m wide （Such an A1GaN/GaN HEMT is denoted as A1GaN/GaN HEMT （10 × 125 μm））. The improved large signal model simulates the Ⅰ-Ⅴ characteristic much more accurately than the original one, and its transconductance and RF characteristics are also in excellent agreement with the measured data.     

Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer

The effects of V/Ill growth flux ratio on a-plane GaN films grown on r-plane sapphire substrates with an InGaN interlayer are investigated. The surface morphology, crystalline quality, strain states, and density of basal stacking faults were found to depend heavily upon the V/III ratio. With decreasing V/III ratio, the surface morphology and crystal quality first improved and then deteriorated, and the density of the basal-plane stacking faults also first decreased and then increased. The optimal V/III ratio growth condition for the best surface morphology and crystalline quality and the smallest basal-plane stacking fault density of a-GaN films are found. We also found that the formation of basal-plane stacking faults is an effective way to release strain.