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Breakdown characteristics of AIGaN/GaN Schottky barrier diodes fabricated on a silicon substrate |
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| Authors: | Jiang Chao Lu Hai Chen Dun-Jun Ren Fang-Fang Zhang Rong Zheng You- |
| Institution: | Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China |
| Abstract: | AlGaN/GaN, Schottky barrier diodes, silicon substrate, breakdown |
| Keywords: | AlGaN/GaN Schottky barrier diodes silicon substrate breakdown |
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