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InFeP layers are prepared by ion implantation of InP with 100-keV Fe+ ions to a dose of 5 ×10^16 cm-2 and investigated by optical, magnetic, and ion beam analysis measurements. Photoluminescence measurements show a deep-level peak at 1.035 eV due to Fe in InP and two exciton-related luminescences at 1.426 eV and 1.376 eV in the implanted samples annealed at 400℃. Conversion electron Mossbauer spectroscopy reveals a doublet corresponding to Fe3+ ions in the indium sites. Atomic force microscopy and magnetic force microscopy show that magnetic clusters are formed in the annealing process. The magnetization-field hysteresis loops show ferromagnetic properties persisting up to room temperature with a coercive field of 100 0e (10e = 79.5775 A-m-1), saturation magnetization of 4.35 × 10-5 emu, and remnant magnetization of 4.4× 10 6 emu.  相似文献   
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本文采用在武汉大学1.7MV串列加速器上的铯溅射负离子源(SNICS)产生碳团簇离子束,然后将离子注入到镍膜中,在样品表面成功制备了少数层石墨烯,用拉曼光谱进行了表征.  相似文献   
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串列加速器装置的功能扩展   总被引:1,自引:0,他引:1  
通过在2×1.7MV串列加速器前端设计并安装静电扫描装置和靶室,扩展了其0~30keV低能注入和沉积功能.利用低能离子注入的方法分别在Ni/SiO2和铜箔衬底上得到石墨烯薄膜,并运用Raman光谱和扫描电子显微镜研究了样品的形貌、薄膜层数及缺陷等性质.实验结果表明,在铜箔衬底上得到双层石墨烯薄膜.通过调试高能端和200keV注入机联机实验,在双束靶室中得到He,Li,C,N,Fe离子束,用于双束注入和辐照损伤等研究.  相似文献   
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Crystalline BiFeO3 (BFO) films each with a crystal structure of a distorted rhombohedral perovskite are characterized by X-ray diffraction (XRD) and high-resolution electron microscopy (HRTEM). The diffusion of silicon atoms from the substrate into the BiFeO3 film is detected by Rutherford backscattering spectrometry (RBS). The element analysis is per- formed by energy dispersive X-ray spectroscopy (EDS). Simulation results of RBS spectrum show a visualized distribution of silicon. X-ray photoelectron spectroscopy (XPS) indicates that a portion of silica is formed in the diffusion process of silicon atoms. Ferroelectric and weak ferromagnetic properties of the BFO films are degraded due to the diffusion of silicon atoms. The saturation magnetization decreases from 6.11 down to 0.75 emu/g, and the leakage current density increases from 3.8 × 10^-4 upto7.1 × 10^-4 A/cm-2.  相似文献   
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李慧  尚艳霞  张早娣  王泽松  张瑞  付德君 《中国物理 B》2015,24(1):18502-018502
We report on few-layer graphene synthesized on Cu foils by ion implantation using negative carbon cluster ions,followed by annealing at 950?C in vacuum.Raman spectroscopy reveals IG/I2Dvalues varying from 1.55 to 2.38 depending on energy and dose of the cluster ions,indicating formation of multilayer graphene.The measurements show that the samples with more graphene layers have fewer defects.This is interpreted by graphene growth seeded by the first layers formed via outward diffusion of C from the Cu foil,though nonlinear damage and smoothing effects also play a role.Cluster ion implantation overcomes the solubility limit of carbon in Cu,providing a technique for multilayer graphene synthesis.  相似文献   
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