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Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer |
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| Authors: | Wang Jian-Xia Wang Lian-Shan Yang Shao-Yan Li Hui-Jie Zhao Gio-Juan Zhang Heng Wei Hong-Yuan Jiao Chun-Mei Zhu Qin-Sheng and Wang Zhan-Guo |
| Affiliation: | Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
| Abstract: | V/III ratio, a-plane GaN, InGaN interlayer, metalorganic chemical vapor deposition |
| Keywords: | V/III ratio a-plane GaN InGaN interlayer metalorganic chemical vapor deposition |
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