厚度对MOCVD生长InN薄膜位错特性与光电性质的影响

研究了金属有机物化学气相沉积法制备的不同厚度InN薄膜的位错特性与光电性质.基于马赛克微晶模型，通过X射线衍射非对称面摇摆曲线测量，拟合出样品刃型位错密度分别为4.2×10¹⁰cm^-2和6.3×10¹⁰cm^-2，并发现样品的微晶扭转角与位错密度随薄膜厚度增加而减小.通过室温霍尔效应测量得到样品载流子浓度分别为9×10¹⁸cm^-3和1.2×10¹⁸cm关键词： 氮化铟 位错 载流子起源 局域态     

Alpha particle detector with planar double Schottky contacts directly fabricated on semi-insulating GaN:Fe template

Alpha particle radiation detectors with planar double Schottky contacts (DSC) are directly fabricated on 5-μm-thick epitaxial semi-insulating (SI) GaN:Fe film with resistivity higher than 1×10⁸Ω·cm. Under 10 V bias, the detector exhibits a low dark current of less than 5.0×10^-11 A at room-temperature, which increases at higher temperatures. Linear behavior in the semi-log reverse current-voltage plot suggests that Poole-Frenkel emission is the dominant carrier leakage mechanism at high bias. Distinct double-peak characteristics are observed in the energy spectrum of alpha particles regardless of bias voltage. The energy resolution of the SI-GaN based detector is determined to be ～ 8.6% at the deposited energy of 1.209 MeV with a charge collection efficiency of ～ 81.7%. At a higher temperature of 90 ℃, the measured full width at half maximum (FWHM) rises to 235 keV with no shift of energy peak position, which proves that the GaN detector has potential to work stably in high temperature environment. This study provides a possible route to fabricate the low cost GaN-based alpha particle detector with reasonable performance.     

Solar-blind ultraviolet band-pass filter based on metal–dielectric multilayer structures

Solar-blind ultraviolet （UV） band-pass filter has significant value in many scientific, commercial, and military appli- cations, in which the detection of weak UV signal against a strong background of solar radiation is required. In this work, a solar-blind filter is designed based on the concept of ＂transparent metal＂. The filter consisting of Al/SiO2 multilayers could exhibit a high transmission in the solar-blind wavelength region and a wide stopband extending from near-ultraviolet to infrared wavelength range. The central wavelength, bandwidth, Q factor, and rejection ratio of the passband are numerically studied as a function of individual layer thickness and multilayer period.     

低温一步法活性炭基脱硫剂的制备与评价

以木屑为原料,在低温条件下一步法制得活性炭基吸附剂,考察了吸附剂制备条件和液-固、气-固吸附条件对吸附剂脱硫性能的影响。结果表明,吸附剂的最佳制备条件为,浸渍液与木屑质量比为1：1,浸渍液中硝酸质量分率为30%、吸附剂表面NiO负载量为5%,常温下浸渍24 h,400℃焙烧3 h。该吸附剂在0.2 g吸附剂/10 mL模拟油、温度为40℃及时间为5 h的液-固吸附脱硫的条件下,脱硫率为28.36%,吸附四次后饱和吸附硫容量可达2.34 mgS/g;在气-固吸附温度为250℃、空速为6.3 h^-1的条件下,饱和吸附硫容量为2.37 mgS/g;高温气-固吸附脱硫对吸附剂的影响表明,与脱硫前相比,吸附剂在比表面积、总孔体积、微孔体积均有明显提高,这说明气-固吸附脱硫过程同时实现了活性炭的扩孔活化。甲苯溶剂再生实验表明,经五次再生后吸附剂的再生性能均可达90%以上。     

Synthesis and Growth Mechanism： A Novel Fishing Rod-Shaped GaN Nanorods

A novel fishing rod-shaped GaN nanorod is successfully fabricated through a new method by using the two-step growth technology. This growth method is applicable to continuous synthesis and is able to produce a large number of single-crystalline GaN nanorods with a relatively high purity and at a low cost. X-ray diffraction, scanning electron microscopy and high-resolution transmission electron microscopy are used to characterize the as- synthesized nanorods. The results show that most of the nanorods consist of a main rod and a top curved thread. It is single-crystal GaN with hexagonal wurtzite structure. The representative photoluminescence spectrum at room temperature exhibits a strong UV light emission band centered at 370.8nm. Furthermore, a possible two-stage growth mechanism of the fishing rod-shaped GaN nanorod is also briefly discussed.     

Forward Current Transport Mechanisms of Ni/Au-InAlN/AlN/GaN Schottky Diodes

We fabricate two Ni/Au-In0.17 Al0.83N/AlN/GaN Schottky diodes on substrates of sapphire and Si, respectively, and investigate their forward-bias current transport mechanisms by temperature-dependent current-voltage mea- surements. In the temperature range of 300-485K, the Schottky barrier heights （SBHs） calculated by using the conventional thermionic-emission （TE） model are strongly positively dependent on temperature, which is in contrast to the negative-temperature-dependent characteristic of traditional semiconductor Schottky diodes. By fitting the forward-bias I V characteristics using different current transport models, we find that the tunneling current model can describe generally the I V 5ehaviors in the entire measured range of temperature. Under the, high forward bias, the traditional TE mechanism also gives a good fit to the measured I-V data, and the actual barrier heights calculated according to the fitting TE curve are 1.434 and 1.413eV at 300K for InAlN/AlN/GaN Schottky diodes on Si and the sapphire substrate, respectively, and the barrier height shows a slightly negative temperature coefficient. In addition, a formula is given to estimate SBHs of Ni/Au-InAlN/AlN/GaN Schottky diodes taking the Fermi-level pinning effect into account.     

Temperature-dependent efficiency droop behaviors of GaN-based green light-emitting diodes

The efficiency droop behaviors of GaN-based green light-emitting diodes (LEDs) are studied as a function of temperature from 300 K to 480 K. The overall quantum efficiency of the green LEDs is found to degrade as temperature increases, which is mainly caused by activation of new non-radiative recombination centers within the LED active layer. Meanwhile, the external quantum efficiency of the green LEDs starts to decrease at low injection current level (<1 A/cm2 ) with a temperature-insensitive peak-efficiency-current. In contrast, the peak-efficiency-current of a control GaN-based blue LED shows continuous up-shift at higher temperatures. Around the onset point of efficiency droop, the electroluminescence spectra of the green LEDs also exhibit a monotonic blue-shift of peak energy and a reduction of full width at half maximum as injection current increases. Carrier delocalization is believed to play an important role in causing the efficiency droop in GaN-based green LEDs.     

Enhanced single photon emission in silicon carbide with Bull's eye cavities

The authors demonstrate a Bull's eye cavity design that is composed of circular Bragg gratings and micropillar optical cavity in 4H silicon carbide (4H-SiC) for single photon emission. Numerical calculations are used to investigate and optimize the emission rate and directionality of emission. Thanks to the optical mode resonances and Bragg reflections, the radiative decay rates of a dipole embedded in the cavity center is enhanced by 12.8 times as compared to that from a bulk 4H-SiC. In particular, a convergent angular distribution of the emission in far field is simultaneously achieved, which remarkably boost the collection efficiency. The findings of this work provide an alternative architecture to manipulate light—matter interactions for achieving high-efficient SiC single photon sources towards applications in quantum information technologies.     

GaN hexagonal pyramids formed by a photo-assisted chemical etching method

A series of experiments were conducted to systematically study the effects of etching conditions on GaN by a con-venient photo-assisted chemical （PAC） etching method. The solution concentration has an evident influence on the surface morphology of GaN and the optimal solution concentrations for GaN hexagonal pyramids have been identified. GaN with hexagonal pyramids have higher crystal quality and tensile strain relaxation compared with as-grown GaN. A detailed anal- ysis about evolution of the size, density and optical property of GaN hexagonal pyramids is described as a function of light intensity. The intensity of photoluminescence spectra of GaN etched with hexagonal pyramids significantly increases compared to that of as-grown GaN due to multiple scattering events, high quality GaN with pyramids and the Bragg effect.     

Breakdown characteristics of AIGaN/GaN Schottky barrier diodes fabricated on a silicon substrate

In this work, the breakdown characteristics of AlGaN/GaN planar Schottky barrier diodes （SBDs） fabricated on the silicon substrate are investigated. The breakdown voltage （BV） of the SBDs first increases as a function of the anodeto-cathode distance and then tends to saturate at larger inter-electrode spacing. The saturation behavior of the BV is likely caused by the vertical breakdown through the intrinsic GaN buffer layer on silicon, which is supported by the post-breakdown primary leakage path analysis with the emission microscopy. Surface passivation and field plate termination are found effective to suppress the leakage current and enhance the BV of the SBDs. A high BV of 601 V is obtained with a low on-resistance of 3.15 mΩ·cm^2.