Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

In order to investigate of cobalt-doped interracial polyvinyl alcohol （PVA） layer and interface trap （Dit） effects, A1/p- Si Schottky barrier diodes （SBDs） are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carded out in the frequency and voltage ranges of 30 kHz-300 kHz and -5 V-6 V, respectively. C-V or er-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance （Rs）, and interfacial layer. Both the real and imaginary parts of dielectric constant （er and err） and electric modulus （Mr and Mrr）, loss tangent （tan~）, and AC electrical conductivity （aac） are investigated, each as a function of frequency and applied bias voltage. Each of the M~ versus V and Mrr versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance （C） and conductance （G/w） values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of A1/Co-doped PVA/p-Si （MPS） type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance （CLF-CHF） method.     

Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range

The perylene(C20H12) layer effect on the electrical and dielectric properties of Al/p-Si(MS) and Al/perylene/p-Si(MPS) diodes have been investigated and compared in the frequency range of 0.7 kHz–2 MHz. Experimental results show that C–V characteristics give an anomalous peak for two structures at low frequencies due to interface states(Nss) and series resistance(Rs). The increases in C and G/ω at low frequencies confirm that the charges at interface can easily follow an ac signal and yield excess capacitance and conductance. The frequency-dependent dielectric constant(ε) and dielectric loss(ε) are subtracted using C and G/ω data at 1.5 V. The ε and ε values are found to be strongly dependent on frequency and voltage, and their large values at low frequencies can be attributed to the excess polarization coming from charges at traps. Plots of ln(σac)–ln(ω) for two structures have two linear regions, with slopes of 0.369 and 1.166 for MS, and of 0.077 and 1.061 for MPS, respectively. From the C 2–V characteristics, the doping acceptor atom concentration(NA) and barrier height(ΦB) for Schottky barrier diodes(SBDs) of MS and MPS types are also obtained to be 1.484 × 1015 and 1.303 × 1015cm 3, and 1.10 and 1.13 eV, respectively.     

Phthalocyanine with a giant dielectric constant

Compound 1 has been prepared by the reaction of 4-nitrophthalonitrile and trans-2-methoxy-4-(2-nitrovinil)phenol by the common method of nucleophilic substitution of an activated nitro group in an aromatic ring. The metallophthalocyanines 2, 3 were prepared by the reaction of a dinitrile derivative with Co(OAc)(2) or Zn(OAc)(2) in DMSO. The lutetium bis-(phthalocyaninato) complex 4 was obtained by treating the dinitrile derivative with lutetium acetate and DBU in 1-hexanol. The new compounds were characterized by elemental analyses, FT-IR, (1)H-NMR, MALDI-TOF MS and UV/Vis spectral data. The spectroscopic data of the new compounds were in accordance with the structures. The temperature and frequency dependence of dielectric and conduction properties of the spin coated film of compounds (2-4) have been studied by fabricating metal-Pc-metal structures. The results show that compound 2 has giant dielectric constant. At a low range of frequency and room temperature, ε' is found to be equal to 2.33 × 10(6), 1.53 × 10(4) and 1.03 × 10(4) for 2, 3 and 4, respectively. The giant dielectric behavior of 2 is mainly attributed to Maxwell-Wagner polarization. The obtained results also indicated that the frequency dependence of the dielectric permittivity, ε'(ω), exhibits non-Debye type relaxation for all temperatures investigated. The ac conductivity results gave a temperature dependent frequency exponent s. The results were compared with the prediction of the Quantum Mechanical Tunneling and Correlated Barrier Hopping models.     

Analyses of temperature-dependent interface states,series resistances,and AC electrical conductivities of Al/p Si and Al/Bi_4Ti_3O_(12)/p Si structures by using the admittance spectroscopy method

In this study, Al/p-Si and Al/Bi4Ti3O12/p-Si structures are fabricated and their interface states （Nss）, the values of series resistance （Rs）, and AC electrical conductivity （σac） are obtained each as a function of temperature using admit- tance spectroscopy method which includes capacitance-voltage （C-V） and conductance-voltage （G-V） measurements. In addition, the effect of interfacial Bi4Ti3012 （BTO） layer on the performance of the structure is investigated. The voltage- dependent profiles of Nss and Rs are obtained from the high-low frequency capacitance method and the Nicollian method, respectively. Experimental results show that Nss and Rs, as strong functions of temperature and applied bias voltage, each exhibit a peak, whose position shifts towards the reverse bias region, in the depletion region. Such a peak behavior is attributed to the particular distribution of Nss and the reordering and restructuring of Nss under the effect of temperature. The values of activation energy （Ea）, obtained from the slope of the Arrhenius plot, of both structures are obtained to be bias voltage-independent, and the Ea of the metal-ferroelectric-semiconductor （MFS） structure is found to be half that of the metal-semiconductor （MS） structure. Furthermore, other main electrical parameters, such as carrier concentration of acceptor atoms （NA）, built-in potential （Vbi）, Fermi energy （EF）, image force barrier lowering （△φb）, and barrier height （φb）, are extracted using reverse bias C 2-V characteristics as a function of temperature.     

The barrier height inhomogeneity in Al/p-Si Schottky barrier diodes with native insulator layer

The current-voltage (I-V) characteristics of Al/p-Si Schottky barrier diodes (SBDs) with native insulator layer were measured in the temperature range of 150-375 K. The estimated zero-bias barrier height Φ_B0 and the ideality factor n assuming thermionic emission (TE) theory show strong temperature dependence. Evaluation of the forward I-V data reveals an increase of zero-bias barrier height Φ_B0 but decrease of ideality factor n with increase in temperature. The conventional Richardson plot exhibits non-linearity below 250 K with the linear portion corresponding to activation energy of 0.41 eV and Richardson constant (A^*) value of 1.3 × 10⁻⁴ A cm⁻² K⁻² is determined from intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 A cm² K² for holes in p-type Si. Such behavior is attributed to Schottky barrier inhomogene ties by assuming a Gaussian distribution of barrier heights (BHs) due to barrier height inhomogeneities that prevail at interface. Also, Φ_B0 versus q/2kT plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of Φ_B0 = 1.055 eV and σ₀ = 0.13 V for the mean BH and zero-bias standard deviation have been obtained from this plot, respectively. Thus, the modified versus q/kT plot gives Φ_B0 and A^* as 1.050 eV and 40.08 A cm⁻² K⁻², respectively, without using the temperature coefficient of the barrier height. This value of the Richardson constant 40.03 A cm⁻² K⁻² is very close to the theoretical value of 32 A K⁻² cm⁻² for p-type Si. Hence, it has been concluded that the temperature dependence of the forward I-V characteristics of the Al/p-Si Schottky barrier diodes with native insulator layer can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights.     

Structure and behaviour of the free radicals generated in gamma irradiated amino acid and iminodiacetic acid derivatives

An EPR study has been carried out to investigate the structure and behaviour of the free radical formed γ-irradiated l-alaninamide hydrochloride, dl-glutamic acid monohydrate and N-(2-carboxyethyl) iminodiacetic acid powders at room temperature. The observed paramagnetic species have been attributed to the CH(3)?HCONH(2), HOOCCH(2)CH(2)?HCOOH and HOOCCH(2)CH(2)N?HCH(2)(COOH)(2) radicals, respectively. Some spectroscopic properties and suggestions concerning possible structure of the radicals were also discussed in this study.     

Synthesis, characterization, and electrical, electrochemical and gas sensing properties of a novel ball-type four t-butylcalix[4]arene bridged binuclear zinc(II) phthalocyanine

1,3 dimethoxy-4-t-butylcalix[4]arene has been used to synthesize a novel ball-type dimeric zinc(II) phthalocyanine, [Zn2Pc2(tbca)4] that exhibits mixed-valence behaviour and non-Arrhenius type dependence of conductivity.     

Synthesis, characterization, and electrical and electrochemical properties of sandwich dilutetium tetraphthalocyanine

Lu2Pc2 and lithium hexylthio-phthalocyanine have been used to synthesize [Lu2(Pc)4] which exhibits variable range hopping conductivity as inorganic semiconductors and also observed electrochromic effect from cyclic voltammetric (CV) measurement.