Effect of substrate temperature on microstructure and optical properties of single-phased Ag20 film deposited by using radio-frequency reactive magnetron sputtering method

Using a radio-frequency reactive magnetron sputtering technique, a series of the single-phased Ag20 films are deposited in a mixture of oxygen and argon gas with a flow ratio of 2：3 by changing substrate temperature （Ts）. Effects of the Ts on the microstructure and optical properties of the films are investigated by using X-ray diffractometry, scanning electron microscopy and spectrophotometry. The single-phased Ag20 films deposited at values of Ts below 200℃ are （111） preferentially oriented, which may be due to the smallest free energy of the （111） crystalline face. The film crystallization becomes poor as the value of Ts increases from 100℃ to 225℃. In particular, the Ag20 film deposited at Ts=225℃ loses the （111） preferential orientation. Correspondingly, the film surface morphology obviously evolves from a uniform and compact surface structure to a loose and gullied surface structure. With the increase of Ts value, the transmissivity and the reflectivity of the films in the transparent region are gradually reduced, while the absorptivity gradually increases, which may be attributed to an evolution of the crystalline structure and the surface morphology of the films.     

Microstructure and optical properties of nitrogen-doped ZnO film

The nitrogen doping of ZnO film deposited by the magnetron sputtering method is subsequently realized by the hydrothermal synthesis method.The nitrogen-doped ZnO film is preferably(002) oriented.With the increase of hexamethylenetetramine(HMT) solution concentration,the average grain size of the film along the 002 direction almost immediately decreases and then monotonously increases,conversely,the lattice strain first increases and then decreases.The structural evolution of the film surface from compact and even to sparse and rough is attributed to the enhanced nitrogen doping content in the hydrothermal process.The transmission and photoluminescence properties of the film are closely related to grain size,lattice strain,and nitrogen-related defect arising from the enhanced nitrogen doping content with HMT concentration increasing.     

Effect of substrate temperature on microstructure and optical properties of single-phased Ag2O film deposited by using radio-frequency reactive magnetron sputtering method

Using a radio-frequency reactive magnetron sputtering technique,a series of the single-phased Ag2O films are deposited in a mixture of oxygen and argon gas with a flow ratio of 2:3 by changing substrate temperature(T s).Effects of the T s on the microstructure and optical properties of the films are investigated by using X-ray diffractometry,scanning electron microscopy and spectrophotometry.The single-phased Ag2O films deposited at values of T s below 200℃ are(111) preferentially oriented,which may be due to the smallest free energy of the(111) crystalline face.The film crystallization becomes poor as the value of T s increases from 100℃ to 225℃.In particular,the Ag2O film deposited at T s = 225℃ loses the 111 preferential orientation.Correspondingly,the film surface morphology obviously evolves from a uniform and compact surface structure to a loose and gullied surface structure.With the increase of T s value,the transmissivity and the reflectivity of the films in the transparent region are gradually reduced,while the absorptivity gradually increases,which may be attributed to an evolution of the crystalline structure and the surface morphology of the films.     

Evolution of the structural and optical properties of silver oxide films with different stoichiometries deposited by direct-current magnetron reactive sputtering

Nitrogen doping of silver oxide(AgxO) film is necessary for its application in transparent conductive film and diodes because intrinsic AgxO film is a p-type semiconductor with poor conductivity.In this work,a series of AgxO films is deposited on glass substrates by direct-current magnetron reactive sputtering at different flow ratios(FRs) of nitrogen to O2.Evolutions of the structure,the reflectivity,and the transmissivity of the film are studied by X-ray diffractometry and sphectrophotometry,respectively.The specular transmissivity and the specular reflectivity of the film decreasing with FR increasing can be attributed to the evolution of the phase structure of the film.The nitrogen does not play the role of an acceptor dopant in the film deposition.     

直流脉冲磁控反应溅射技术制备掺铝氧化锌薄膜的研究

文章采用直流脉冲磁控反应溅射(DCPsputtering)技术,在不同氧氩比(GFR)条件下玻璃衬底上制备了一系列掺铝氧化锌(AZO)薄膜,并利用X射线衍射、扫描电子显微镜和分光光度计从宏观应力和微观晶格畸变的角度研究了GFR对薄膜结构、表面形貌和光学特性的影响.制备的多晶AZO薄膜呈现了明显的ZnO-(103)择优取向,这归结于3小时薄膜沉积过程中伴随的退火引起的薄膜晶面能转变.随着GFR的增大,AZO薄膜内宏观拉应力先增大到最大值,随后宏观压应力随着GFR的继续增大而增大.薄膜中的宏观应力明显随着GFR从拉应力向压应力转变.这与晶格微观畸变诱导的微观应力的研究结果趋势恰恰相反.随着GFR的增加,薄膜在可见光区的平均透射率先增加后减小,薄膜晶粒尺寸诱导的晶界散射是影响薄膜透射率的主导机制.     

射频磁控反应溅射制备的Ag2O薄膜的椭圆偏振光谱研究

Ag₂O薄膜在新型超高存储密度光盘和磁光盘方面具有潜在的应用前景.利用射频磁控反应溅射技术, 通过调节衬底温度在沉积气压为0.2 Pa、氧氩比为2:3的条件下制备了一系列Ag₂O 薄膜.利用通用振子模型(包括1个Tauc-Lorentz振子和2个Lorentz 振子)拟合了薄膜的椭圆偏振光谱.在1.5-3.5 eV能量区间,薄膜的折射率在2.2-2.7之间, 消光系数在0.3-0.9之间. 在3.5-4.5 eV能量区间,薄膜呈现了明显的反常色散,揭示Ag₂O薄膜的等离子体振荡频率在 3.5-4.5 eV之间. 随着衬底温度的升高,薄膜的光学吸收边总体上发生了红移, 该红移归结于薄膜晶格微观应变随衬底温度的升高而增大. Ag₂O薄膜的光学常数表现出典型的介质材料特性.     

The crystal structures and physical properties of the solid solution compound Ba5Y8-xMn4021-1.5x （x = 0, 1）

New oxometallides with the formula Ba5Y8-xMn4021-1.5x （x = 0, 1） are prepared through an atmosphere-controlled solid-state reaction. Two single-phase samples with Ba/Y/Mn atomic ratios 5/8/4 （Y8） and 5/7/4 （Y7） are obtained. The crystal structures and the physical properties of the compounds are investigated by X-ray powder diffraction, magnetization, conductivity, and dielectricity measurements. The Ba5Y8-xMn4021-1.5x compound is demonstrated to be a Y-deficient solid solution. The solid solution compound Ba5Y8-xMn4021-1.5x crystallizes into tetragonal symmetry with the space group I4/m. Detailed structure analysis by Rietveld refinement of the X-ray powder diffraction data reveals that the Y vacancies occur preferentially at the Y（2） site. Thermal magnetization measurements indicate the presence of antiferromagnetic interaction between Mn ions in the compounds, and temperature-dependent resistivity measurements show that insulator-semiconductor transitions occur around 175 K and 170 K for the Y8 and Y7 samples, respectively. Strong frequency dependences of the dielectric constant are observed above -175 K for the two compounds.