MOCVD生长的InN薄膜中In分凝现象

利用金属有机物化学气相淀积(MOCVD)方法不同生长条件下在c面蓝宝石衬底上制备了InN薄膜,通过不同的物理表征手段研究了InN薄膜的物理性质,结果表明:合适的生长温度可以抑制InN薄膜表面分凝现象。研究认为较低的生长温度使作为N源的NH3分解率较低,In—N的成键可能性小,导致In在表面聚集出现分凝;而较高生长温度时,InN薄膜中In—N键能较小,易发生断裂,反应活性较强的N和H原子逸离薄膜表面,In滞留在薄膜表面也导致In分凝现象的出现。相对于表面分凝的样品,未出现表面分凝的样品的薄膜晶体质量和表面形貌也得到了提高。同时,通过Raman散射谱研究了晶格振动E2声子模的应力效应。     

Solar-blind ultraviolet band-pass filter based on metal–dielectric multilayer structures

Solar-blind ultraviolet （UV） band-pass filter has significant value in many scientific, commercial, and military appli- cations, in which the detection of weak UV signal against a strong background of solar radiation is required. In this work, a solar-blind filter is designed based on the concept of ＂transparent metal＂. The filter consisting of Al/SiO2 multilayers could exhibit a high transmission in the solar-blind wavelength region and a wide stopband extending from near-ultraviolet to infrared wavelength range. The central wavelength, bandwidth, Q factor, and rejection ratio of the passband are numerically studied as a function of individual layer thickness and multilayer period.     

Surface States in the AlxGa1-xN Barrier in AlxGa1-xN／GaN Heterostructures

Frequency-dependent capacitance-voltage (C-V) measurements have been performed on modulation-doped Al0.22 Ga0.78N/GaN heterostructures to investigate the characteristics of the surface states in the AlxGa1-xN barrier. Numerical fittings based on the experimental data indicate that there are surface states with high density locating on the AlxGa1-xN barrier. The density of the surface states is about 10^12cm^-2eV^-1, and the time constant is about 1μs. It is found that an insulating layer (Si3N4) between the metal contact and the surface of AlxGa1-xN can passlvate the surface states effectively.     

Photoresponse of the In0.3Ga0.7N metal-insulator-semiconductor photodetectors

In0.3Ga0.7N metal-insulator-semiconductor （MIS） and metal-semiconductor （MS） surface barrier photodetectors have been fabricated. The In0.3Ga0.7N epilayers were grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The photoresponse and reverse current-voltage characteristics of the In0.3Ga0.7N MIS and MS photodetectors were measured. A best zero bias responsivity of 0.18 A/W at 450 nm is obtained for the In0.3Ga0.7N MIS photodetector with 10 nm Si3N4 insulator layer, which is more than ten times higher than the In0.3Ga0.7N MS photodetector. The reason is attributed to the decrease of the interface states and increase of surface barrier height by the inserted insulator. The influence of the thickness of the Si3N4 insulator layer on the photoresponsivity of the MIS photodetector is also discussed.     

Au/Pt/InGaN/GaN Heterostructure Schottky Prototype Solar Cell

A patterned Au/Pt/In0.2Ga0.8N/GaN heterostructure Sehottky prototype solar cell is fabricated. The forward current-voltage characteristics indicate that thermionie emission is a dominant current transport mechanism at the Pt/InGaN interface in our fabricated cell. The Sehottky solar cell has an open-circuit voltage of 0.91 V, short-circuit current density of 7mA/cm^2, and fill factor of 0.45 when illuminated by a Xe lamp with a power density of 300 mW/cm^2. It exhibits a higher short-circuit current density of 30 mA/cm^2 and an external quantum efficiency of over 25% when illuminated by a 20-roW-power He-Cd laser.     

Forward Current Transport Mechanisms of Ni/Au-InAlN/AlN/GaN Schottky Diodes

We fabricate two Ni/Au-In0.17 Al0.83N/AlN/GaN Schottky diodes on substrates of sapphire and Si, respectively, and investigate their forward-bias current transport mechanisms by temperature-dependent current-voltage mea- surements. In the temperature range of 300-485K, the Schottky barrier heights （SBHs） calculated by using the conventional thermionic-emission （TE） model are strongly positively dependent on temperature, which is in contrast to the negative-temperature-dependent characteristic of traditional semiconductor Schottky diodes. By fitting the forward-bias I V characteristics using different current transport models, we find that the tunneling current model can describe generally the I V 5ehaviors in the entire measured range of temperature. Under the, high forward bias, the traditional TE mechanism also gives a good fit to the measured I-V data, and the actual barrier heights calculated according to the fitting TE curve are 1.434 and 1.413eV at 300K for InAlN/AlN/GaN Schottky diodes on Si and the sapphire substrate, respectively, and the barrier height shows a slightly negative temperature coefficient. In addition, a formula is given to estimate SBHs of Ni/Au-InAlN/AlN/GaN Schottky diodes taking the Fermi-level pinning effect into account.     

GaN1-xPx三元合金的光学与结构特性

对采用金属有机化学气相淀积(MOCVD)技术生长的GaN1-xPx三元合金进行了低温光致发光(PL)和X射线衍射(XRD)测试分析，与来自GaN层的带边发射相比，P的摩尔分数比为0．03，0．11和0．15的GaN1-xPx的光致发光峰分别呈现出了73meV，78meV和100meV的红移，文中将这种红移归因于GaN1-xPx合金具有大的带隙能量弯曲系数。X射线衍射结果表明GaN1-xPx三元合金仍为六方结构晶体，且随着P组份比的增加，GaN1-xPx合金的(0002)衍射峰逐渐向小角度方向移动，即晶格常量变大，同时，(0002)衍射峰谱线不断宽化，说明由于替位式P原子的不规则分布以及部分间隙P原子的影响造成了GaN1-xPx样品的晶格畸变。在GaN1-xPx的光致发光谱及X射线衍射谱中均未观测到相应的有关GaP的峰，表明所生长的高P含量的GaN1-xPx三元合金没有产生明显的相分离。     

Temperature-dependent efficiency droop behaviors of GaN-based green light-emitting diodes

The efficiency droop behaviors of GaN-based green light-emitting diodes (LEDs) are studied as a function of temperature from 300 K to 480 K. The overall quantum efficiency of the green LEDs is found to degrade as temperature increases, which is mainly caused by activation of new non-radiative recombination centers within the LED active layer. Meanwhile, the external quantum efficiency of the green LEDs starts to decrease at low injection current level (<1 A/cm2 ) with a temperature-insensitive peak-efficiency-current. In contrast, the peak-efficiency-current of a control GaN-based blue LED shows continuous up-shift at higher temperatures. Around the onset point of efficiency droop, the electroluminescence spectra of the green LEDs also exhibit a monotonic blue-shift of peak energy and a reduction of full width at half maximum as injection current increases. Carrier delocalization is believed to play an important role in causing the efficiency droop in GaN-based green LEDs.     

Plasma assisted molecular beam epitaxial growth of GaN with low growth rates and their properties

A systematic investigation on PA-MBE grown GaN with low growth rates(less than 0.2μm/h)has been conducted in a wide growth temperature range,in order to guide future growth of sophisticated fine structures for quantum device applications.Similar to usual growths with higher growth rates,three growth regions have been revealed,namely,Ga droplets,slightly Ga-rich and N-rich 3D growth regions.The slightly Ga-rich region is preferred,in which GaN epilayers demonstrate optimal crystalline quality,which has been demonstrated by streaky RHEED patterns,atomic smooth surface morphology,and very low defect related yellow and blue luminescence bands.The growth temperature is a critical parameter to obtain high quality materials and the optimal growth temperature window(~700-760℃)has been identified.The growth rate shows a strong dependence on growth temperatures in the optimal temperature window,and attention must be paid when growing fine structures at a low growth rate.Mg and Si doped GaN were also studied,and both p-and n-type materials were obtained.     

Breakdown characteristics of AIGaN/GaN Schottky barrier diodes fabricated on a silicon substrate

In this work, the breakdown characteristics of AlGaN/GaN planar Schottky barrier diodes （SBDs） fabricated on the silicon substrate are investigated. The breakdown voltage （BV） of the SBDs first increases as a function of the anodeto-cathode distance and then tends to saturate at larger inter-electrode spacing. The saturation behavior of the BV is likely caused by the vertical breakdown through the intrinsic GaN buffer layer on silicon, which is supported by the post-breakdown primary leakage path analysis with the emission microscopy. Surface passivation and field plate termination are found effective to suppress the leakage current and enhance the BV of the SBDs. A high BV of 601 V is obtained with a low on-resistance of 3.15 mΩ·cm^2.