基于整形飞秒激光脉冲的三维微纳制备

飞秒激光脉冲加工具有热效应小、加工精度突破衍射极限、三维内部加工能力等特性,在微纳制备领域独具优势。综述了利用飞秒激光脉冲整形技术结合飞秒激光三维直写进行透明介质中微纳制备的最新进展,这些技术有望在新型集成光学和微纳光学中发挥重要的作用。     

飞秒激光加工蓝宝石超衍射纳米结构

蓝宝石具有超强硬度及耐腐蚀、耐高温、在紫外-红外波段具有良好的透光性等优点,在军工业以及医疗器械方面具有广泛的应用前景.然而这些优点又对蓝宝石的机械加工或化学腐蚀加工带来困难.飞秒激光脉冲具有热损伤小、加工分辨率高、材料选择广等特点,被广泛应用于固体材料改性和高精度三维微纳器件加工.本文提出了利用飞秒激光多光子吸收特性在蓝宝石表面实现超越光学衍射极限的精细加工.利用聚焦后的波长为343 nm的飞秒激光,配合高精密三维压电位移台,实现激光焦点和蓝宝石晶体的相对三维移动,在蓝宝石晶体衬底上进行精确扫描,得到了线宽约61 nm的纳米线,纳米线间的最小间距达到142 nm左右.利用等离子体模型解释了加工得到的纳米条纹的产生原因,研究了激光功率、扫描速度对加工分辨率的影响.最终本工作实现了超越光学衍射极限的加工精度,为实现利用飞秒激光对高硬度材料的微纳结构制备提供了参考.     

飞秒激光直写偏振转换器件和几何相位器件(特邀)

光学器件的微型化和集成化是当前研究的热点,其中利用微纳结构实现局域电磁改性的超构光学更是引人关注。本文从微纳结构的制备出发,总结了利用超衍射精密加工的飞秒激光直写技术,制备偏振转换器件和几何相位器件的工作。介绍了微纳结构改性的物理机制,飞秒激光直写光刻胶、飞秒激光烧蚀金属薄膜、飞秒激光诱导纳米光栅等手段在偏振转换器件和几何相位器件制备方面的进展,展望了飞秒激光微纳加工技术在超构光学器件制备方面的挑战。     

亚微米线条的微纳光纤笔直写技术研究

提出了一种利用微纳光纤笔(MNFP)直接写入亚微米线条的技术,利用微纳光纤笔在光刻胶表面接触式扫描,从而曝光产生亚微米线条。热熔拉伸和湿法刻蚀两步工艺相结合的新方法被用来制做微纳光纤笔。实验研究表明,直写分辨率可以达到稳定的200nm线宽。这一分辨率已经突破了曝光波长(442nm)的衍射极限。结果也显示了,通过改变光强,微纳光纤笔可以直写曝光出亚微米范围内宽度可变的线条。     

双光子聚合多次快速扫描机制与小线宽研究

采用自由基浓度起伏理论并考虑光镊集聚效应,理论研究了飞秒激光双光子聚合多次快速扫描的线宽问题。根据双光子光聚合过程中自由基浓度随时间变化的关系,考虑光镊力及自由扩散效应对自由基分布的影响,得到了多次快速扫描加工线宽的表达式。研究了多次扫描过程中产生自由基浓度随扫描次数的变化、双光子聚合加工不同扫描次数下加工线宽随激光功率的变化、多次扫描过程中间隔时间对于加工线宽的影响。多次扫描的线宽表达式可以直接回归至单次扫描的一般公式,且理论结果与文献中实验加工线宽相吻合,两者误差在2%。控制扫描间隔时间,减少自由基的向外扩散运动以及被树脂材料内大分子猝灭,使得活性自由基的分布更为集中,可以获得更小的加工线宽。研究结果为飞秒激光双光子更小线宽加工的研究提供了新的思路,为飞秒激光多次快速扫描加工提供了理论依据。     

利用飞秒激光直写实现透明介电材料中三维维微微纳结构的制备与集成

本文综述了利用飞秒激光三维直写技术,在玻璃和晶体等透明介电材料中实现微流体、微光学、微电子学等一系列功能性微纳结构,并进一步构筑新型微纳光子器件的原理、技术与应用。     

基于局域场加强的近场纳米加工技术

介绍了一种全新的基于飞秒激光局域场加强效应的纳米加工技术,通过使用了微焦级别脉宽为130 fs、波长800 nm的飞秒激光照射于原子力显微镜的探针针尖,利用其局域场加强效应在金薄膜表面加工出各种纳米图形。对加工参数对加工线宽的影响中,我们发现了随着加工能量的减小和加工速度的不断增大将导致加工线宽不断减小,最终达到了极限线宽(～10 nm)。这项技术可以广泛的应用与各种材料的加工中,尤其适合各种金属薄膜的加工,特别是结合了现有的自动化控制系统更是可以加工出任意复杂的二维纳米图形。     

突破光学衍射极限,发展纳米光学和光子学

信息技术已经进入纳米时代,纳米光学和光子学正是为满足快速和高密度信息技术的需求而产生、发展的.先进的纳米光学和光子学器件应该是高速、高分辨率和高集成的,形成各类光学和光子学芯片和盘片.由于器件最小特征尺寸和加工分辨率受限于光的衍射极限,现有技术已接近实用化技术的理论极限并且成本很高,只有突破光学衍射极限才能进一步发展纳...     

熔融石英玻璃飞秒激光微纳加工研究

熔融石英玻璃因具有耐热性高、热膨胀系数低、绝缘性能好等优点,广泛应用于航空航天、微光学元件、军事等领域,并对其加工精度和表面质量提出了更高的要求。由于飞秒激光具有“冷加工”的特点,因此在熔融石英玻璃微纳加工方面展现出独特优势。采用波长为1030nm、重复频率为100kHz、脉宽为290fs的飞秒激光对熔融石英玻璃进行加工,确定了不同物镜下熔融石英玻璃的损伤阈值,研究了不同物镜下的激光功率、扫描速度、离焦量、扫描次数对加工线槽的影响,使用逐层叠加加工的方法在低功率下得到了高深宽比(4∶1)的线槽,并且提高加工线槽的宽度与深度的可控性,可以在较薄熔融石英玻璃(200μm)上进行微纳加工。     

飞秒激光精密微纳加工的研究进展

飞秒激光由于其超快时间特性和超高峰值功率特性在精密微纳加工领域引起了人们广泛的重视．在与物质的相互作用中它能快速、准确地将能量作用在特定的区域内，从而可以获得极高的分辨率和加工精度。文章综述了飞秒激光精密微纳加工的最新研究进展，分别就飞秒激光烧蚀微加工和飞秒激光双光子聚合产生三维微纳结构进行了介绍，阐述了各自的物理机制．最后对飞秒激光微纳加工的研究前景做了初步探讨。     

微纳加工技术在微纳电子器件领域的应用

微纳加工技术推动着集成电路不断缩小器件尺寸和提高集成度，光学光刻技术依然是目前的主流微纳加工技术，同时有多种替代技术如电子束直写、极紫外光刻和投影电子束技术，文章介绍了自上而下的微纳加工技术的进展及其在微纳器件研制的重要作用。     

4H-SiC基底Al_2O_3/SiO_2双层减反射膜的设计和制备

在4H-SiC基底上设计并制备了Al2O3SiO2紫外双层减反射膜,通过扫描电镜(SEM)和实测反射率谱来验证理论设计的正确性.利用编程计算得到Al2O2和SiO2的最优物理膜厚分别为42.0 nm和96.1 nm以及参考波长λ=280 nm处最小反射率为0.09%.由误差分析可知,实际镀膜时保持双层膜厚度之和与理论值一致有利于降低膜系反射率.实验中应当准确控制SiO2折射率并使Al2O3折射率接近1.715.用电子束蒸发法在4H-SiC基底上淀积Al2O3SiO2双层膜,厚度分别为42 nm和96 nm.SEM截面图表明淀积的薄膜和基底间具有较强的附着力.实测反射率极小值为0.33%,对应λ=276 nm,与理论结果吻合较好.与传统SiO2单层膜相比,Al2O3SiO2双层膜具有反射率小,波长选择性好等优点,从而论证了其在4H-SiC基紫外光电器件减反射膜上具有较好的应用前景.     

Nano-material processing with laser radiation in the near field of a scanning probe tip

We report preliminary results of using a scanning probe microscope/laser combination to perform nanostructuring on insulator and metal surfaces in air. This technique enables processing of structures with a lateral resolution of approximately 10 nm. In this paper we present our last structuring results with both scanning tunnelling and scanning force microscopy. Some possible interaction mechanisms responsible for the structuring will be discussed.     

n-SiC的电子拉曼散射及二级拉曼谱研究

研究了利用离子注入法得到的掺氮n-SiC拉曼光谱. 理论线形分析表明,与4H-SiC相比,6H-SiC中LO声子等离子体激元耦合模(LOPC模)拉曼位移随自由载流子浓度变化较小. 5145nm激发光下得到的电子拉曼散射光谱表明,k位处由1s(A₁)到1s(E)的能谷轨道跃迁带来的拉曼谱6H-SiC中有四条,4H-SiC中有二条;高频6303及635cm^-1处观察到的谱线被认为与深能级缺陷有关. 最后,利用纤锌矿型结构二级拉曼散射选择定则指认了6 关键词： 碳化硅 电子拉曼散射 轨道能谷分裂 倍频谱     

Picosecond pulsed laser ablation and micromachining of 4H-SiC wafers

Ultra-short pulsed laser ablation and micromachining of n-type, 4H-SiC wafer was performed using a 1552 nm wavelength, 2 ps pulse, 5 μJ pulse energy erbium-doped fiber laser with an objective of rapid etching of diaphragms for pressure sensors. Ablation rate, studied as a function of energy fluence, reached a maximum of 20 nm per pulse at 10 mJ/cm², which is much higher than that achievable by the femtosecond laser for the equivalent energy fluence. Ablation threshold was determined as 2 mJ/cm². Scanning electron microscope images supported the Coulomb explosion (CE) mechanism by revealing very fine particulates, smooth surfaces and absence of thermal effects including melt layer formation. It is hypothesized that defect-activated absorption and multiphoton absorption mechanisms gave rise to a charge density in the surface layers required for CE and enabled material expulsion in the form of nanoparticles. Trenches and holes micromachined by the picosecond laser exhibited clean and smooth edges and non-thermal ablation mode for pulse repetition rates less than 250 kHz. However carbonaceous material and recast layer were noted in the machined region when the pulse repetition rate was increased 500 kHz that could be attributed to the interaction between air plasma and micro/nanoparticles. A comparison with femtosecond pulsed lasers shows the promise that picosecond lasers are more efficient and cost effective tools for creating sensor diaphragms and via holes in 4H-SiC.     

利用光纤共焦扫描显微镜的轴向响应曲线测定压电陶瓷的逆压电伸缩效应

在光纤共焦扫描显微镜（FOCSM）的基础上,利用其轴向响应曲线的线性部分,给出了一种测定物体微位移的新方法。并用该方法精确测量了压电陶瓷微小的逆压电伸缩效应,分辨率可以达到5nm。     

Analysis of materials modifications caused by UV laser micro drilling of via holes in AlGaN/GaN transistors on SiC

Pulsed UV laser drilling can be applied to fabricate vertical electrical interconnects (vias) for AlGaN/GaN high electron mobility transistor devices on single-crystalline silicon carbide (SiC) substrate. Through-wafer micro holes with a diameter of 50-100 μm were formed in 400 μm thick bulk 4H-SiC by a frequency-tripled solid-state laser (355 nm) with a pulse width of ≤30 ns and a focal spot size of ∼15 μm. The impact of laser machining on the material system in the vicinity of micro holes was investigated by means of micro-Raman spectroscopy and transmission electron microscopy. After removing the loosely deposited debris by etching in buffered hydrofluoric acid, a layer of <4 μm resolidified material remains at the side walls of the holes. The thickness of the resolidified layer depends on the vertical distance to the hole entry as observed by scanning electron microscopy. Micro-Raman spectra indicate a change of internal strain due to laser drilling and evidence the formation of nanocrystalline silicon (Si). Microstructure analysis of the vias’ side walls using cross sectional TEM reveals altered degree of crystallinity in SiC. Layers of heavily disturbed SiC, and nanocrystalline Si are formed by laser irradiation. The layers are separated by 50-100 nm thick interface regions. No evidence of extended defects, micro cracking or crystal damage was found beneath the resolidified layer. The precision of UV laser micro ablation of SiC using nanosecond pulses is not limited by laser-induced extended crystal defects.     

Limit resolution in low-voltage FIB without correction of chromatic aberration

The resolution in a scanning focused-ion beam (FIB) microscope is determined by two factors: the size of the ion source image on the target and the particle dispersion in the target. A model of low-voltage micro FIB is proposed and calculated, in which the influence of these factors is reduced. It is shown that a resolution of 1.7 nm can be obtained in the analytical mode under target irradiation by helium ions, with detection of potential-emission secondary electrons, and a resolution of 1.3 nm is possible in the technological mode upon reactive etching of a diamond target by molecular oxygen ions.     

Characterization and performance of the femtosecond fluorescence up-conversion microscope

The characterization and performance of the femtosecond fluorescence up-conversion microscope is reported in this paper. This new fluorescence microscope is a combination of the frequency up-conversion technique and a confocal optical configuration, which simultaneously achieves femtosecond time and nanometer space resolution. The femtosecond time resolution was evaluated by measuring the rise up of time-resolved fluorescence from a dye molecule, and it was 520 fs and 460 fs with 100× (N.A.=1.3) and 40× (N.A.=0.75) objective lenses, respectively. The best transverse (XY) resolution was 0.34 m with the 100× objective lens for 400 nm excitation. An axial (Z) resolution as high as 1.1 m was obtained for 600 nm fluorescence detection with a 50 m pinhole and a 100× objective lens. The axial resolution was remarkably improved compared with ordinary confocal microscopes owing to the up-conversion process, which requires spatial overlap between the tightly focused gate and the fluorescence beams. Femtosecond time-resolved fluorescence measurements were performed for micro-meter sized particles in liquids, fluorescent beads and C519/toluene micro droplets, by using the laser trapping technique. The high potential of the fluorescence up-conversion microscope was demonstrated. PACS 78.47.+p; 87.64.-t; 82.53.-k     

Epitaxially grown ZnO thin films on 6H-SiC(0 0 0 1) substrates prepared by spin coating-pyrolysis

Epitaxially grown ZnO thin film on 6H-SiC(0 0 0 1) substrate was prepared by using a spin coating-pyrolysis with a zinc naphthenate precursor. As-deposited film was pyrolyzed at 500 °C for 10 min in air and finally annealed at 800 °C for 30 min in air. In-plane alignment of the film was investigated by X-ray pole-figure analysis. Field emission-scanning electron microscope, scanning probe microscope, and He-Cd laser (325 nm) was used to analyze the surface morphology, the surface roughness and photoluminescence of the films. In the photoluminescence spectra, near-band-edge emission with a broad deep-level emission was observed. The position of the near-band-edge peak was around 3.27 eV.