GaAs多结电池宽光谱ZnS/Al2O3/MgF2减反射膜的设计与分析

 为了提高砷化镓(GaAs)多结太阳电池的光电转换效率,设计了宽光谱(300 nm～1 800 nm)ZnS/Al2O3/MgF2三层减反射膜,分析了各层的厚度及折射率对三层膜系有效反射率的影响。结果表明： 对于整个波长,ZnS厚度对有效反射率的影响要大于Al2O3和MgF2,MgF2厚度对有效反射率的影响最小;适当减小MgF2的折射率或增加ZnS的折射率可得到更低的有效反射率。同时,当 ZnS,Al2O3和MgF2的最优物理厚度分别为52.77 nm,82.61 nm,125.17 nm时,此时最小有效反射率为2.31％。     

a-Si/SiO2多量子阱材料制备及其晶化和发光

本文研究用等离子体增强化学气相淀积(PECVD)方法淀积SiO2和非晶硅(a-Si)时淀积速率和薄膜折射率与淀积条件的关系。选择合适的淀积条件制备了a-Si/SiO2多量子阱结构材料。用激光扫描退火方法使其晶化,当a-Si和SiO2层厚度分别为4nm和6nm时,形成了颗粒大小为3.8nm的硅晶粒。晶化后的样品在10K下可以观察到较强的光荧光发射,三个峰值波长分别为810、825和845nm.     

火焰水解法制备Si02—Ge02平面波导材料

本文采用火焰水解法（FHD）在单晶Si片上快速淀积SiO2/SiO2-GcO2厚膜，再经过高温玻璃化处理，获得了玻璃态的平面波导材料。下包层SiO2膜的厚度约为40μm，波长1550nm处的折射率为1.4462，芯层SiO2-GeO2膜的厚度为5μm，折射率为1.4631。分别采用XRD、XPS、SEM和椭偏仪等对波导材料表面特性和折射率等进行了测试分析。     

紫外多层减反射膜

一、图的简要说明图1是由O·A·Motovilov等人制作的紫外波段内双层减反射膜的光谱特性曲线图。基底为水晶,膜系为四种:(1)ZrO_2+SiO_2;(2)HfO+SiO_2;(3)、(4)Sc_2O_3+SiO_2。图2是表示中心波长为2600A、膜厚为λ/4的单层膜在2000A处的反射率矢量图。图中,实线表示折射率为1.5的基底在空气(折射率=1)中,反射率小于2%膜层的折射率范围;虚线表示折射率为1.25时的矢量。     

用离子束溅射淀积的氧化物薄膜的折射率

介绍了用于波长为1550nm光通讯波分复用／解复用滤光片的离子束溅射的Ta2O5和SiO2薄膜在法里－珀罗多层膜中的折射率的实时所 方法及拟合方法及拟合结果，给出了它们的淀积时间，淀积速率和计算的光学厚度，分析了这些结果的可靠性。     

减反射膜

作用反光基底的三层减反射膜。紧贴基底的膜层有效光学厚度视基底的折射率不同,可以为λ/4或λ/2;中间层膜由混合的金属氧化物组成,有效光学厚度为λ/2;第三层膜的有效光学厚度为λ/4。镀中间层膜的方法是,把氧气流对着射向膜料的电子束。     

超宽带减反射膜的设计和制备

设计了400～900 nm波段上的超宽带减反射膜,在410～850 nm范围内的平均残余反射率设计值约为0.2%,在设计的全波段上约为0.24%.讨论了初始膜系结构的选择原则,分析了带宽、膜层折射率差、最外层折射率和膜层总厚度等因素对宽带减反射特性的影响.对特定的带宽.增加两种薄膜材料的折射率差和选择尽可能低的最外层折射率对获得优良的减反射特性是非常重要的.实验制备了K9玻璃上TiO2/MgF2两种材料组成的8层结构的超宽带减反射膜,实测结果表明,在带宽520 nm范围内的平均残余反射率约为0.44%,说明用二种材料设计超宽带减反射膜是成功的,对垂直入射的减反射膜.多种材料的膜系并不比两种材料更具优越性.     

LiB3O5晶体上四倍频增透膜设计

采用矢量法设计了三硼酸锂（LiB3O5,LBO）晶体上1 064 nm、532 nm、355 nm和266 nm四倍频增透膜.结果表明,在1 064 nm、532 nm、355 nm和266 nm波长的剩余反射率分别为0.001 9％、0.003 1％、0.006 1％和0.004 7％.根据容差分析,薄膜制备时沉积速率准确度控制在＋6.5％时,基频、二倍频、三倍频和四倍频波长的剩余反射率分别增加至0.24％、0.92％、2.38％和4.37％.当薄膜材料折射率的变化控制在＋3％时,1 064 nm波长的剩余反射率增大为0.18％,532 nm、355 nm和266 nm波长分别达0.61％,0.59％,0.20％.与薄膜物理厚度相比,膜层折射率对剩余反射率的影响大.对膜系敏感层的分析表明,在1 064 nm和266 nm波长,从入射介质向基底过渡的第二层膜厚度变化对剩余反射率的影响最大,其次是第一膜层.在532 nm和355 nm波长,从入射介质向基底过渡的第一和第四膜层是该膜系的敏感层.误差分析也表明,薄膜材料的色散对特定波长的剩余反射率具有明显影响,即1 064 nm、532 nm、355 nm和266 nm波长的剩余反射率分别增加至0.30％、0.23％、0.58％和3.13％.     

Ge基底在8-11.5μm波段用蒸发均匀混合膜料获得合成折射率的有效和牢固的减反射膜

本文叙述在Ge基底上镀制对8-11.5μm中波段有效、牢固的减反射膜膜层,计算双层减反射膜的最小平均反射率与固定一层折射率、改变另一层折射率的关系。用这种方法可以获得各种膜料的组合结果。把均匀的CdTe/CeF_3双层膜与外层膜折射率由单蒸发源蒸发混合膜制CeF_3+SrF_2或CeF_3+SrF_2+CaF_2合成的、经过改进的膜层作了比较。增加Y_2O_3结合层和同时蒸发两种膜料,使两种膜料在位相面上非均匀混合后,明显地提高了膜层的牢固度。     

可见光波段及1 064 nm波长处用于Glan-Taylor棱镜减反射膜

为了提高Glan-Taylor棱镜的透射率,研究了Glan-Taylor棱镜在可见光波段及1 064 nm波长处减反射膜膜的设计和制备.为提高薄膜和冰洲石晶体的附着力,采用沉积Al2O3为过渡层,ZrO2作缓冲层的方法,用单纯形优化的方法进行膜系优化设计.用电子束沉积和离子束辅助沉积的方法制备了多层减反射膜,并采用石英晶体振荡法监控膜厚和沉积速率.测量结果表明,在可见光波段及1 064 nm波长处的剩余反射率均小于0.5%经测试薄膜与冰洲石晶体的附着力性能良好.     

LBO晶体上1 064，532 nm倍频增透膜的镀制及性能分析

 用电子束蒸发沉积方法在X切LBO（X-LBO）晶体上镀制了两种不同膜系结构的1 064和532 nm倍频增透膜，其中一种膜系结构为基底/ZrO₂/Y₂O₃/Al₂O₃/SiO₂/空气，另一种为基底/0.5Al₂O₃/ZrO₂/Y₂O₃/Al₂O₃/SiO₂/空气，两种膜系结构的主要差别在于有无氧化铝过渡层。测量了薄膜的反射率光谱曲线，发现两种增透膜在1 064和532 nm处的反射率均小于0.5％，实际镀制结果与理论设计曲线的差异主要是由材料折射率的变化引起的。且对样品在空气环境中进行了温度为473 K的退火处理，结果发现两种膜系结构均表现了较优异的光学性能，氧化铝过渡层的加入使薄膜具有强的热应力性能。     

Al2O3/SiO2 films prepared by electron-beam evaporation as UV antireflection coatings on 4H-SiC

Al₂O₃/SiO₂ films have been deposited as UV antireflection coatings on 4H-SiC by electron-beam evaporation and characterized by reflection spectrum, scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The reflectance of the Al₂O₃/SiO₂ films is 0.33% and 10 times lower than that of a thermally grown SiO₂ single layer at 276 nm. The films are amorphous in microstructure and characterize good adhesion to 4H-SiC substrate. XPS results indicate an abrupt interface between evaporated SiO₂ and 4H-SiC substrate free of Si-suboxides. These results make the possibility for 4H-SiC based high performance UV optoelectronic devices with Al₂O₃/SiO₂ films as antireflection coatings.     

Design and preparation of frequency doubling antireflection coating with different thicknesses of interlayer for LiB3O5 crystal

Design and preparation of frequency doubling antireflection coating with different thicknesses of interlayer were investigated for LiB3O5 (LBO) substrate. The design was based on the vector method. The thickness of the inserted SiO2 interlayer could be changed in a wide range for the four-layer design with two zeros at 1064 and 532 nm. The coatings without any interlayer and with 0.1 quarter-wave (λ/4), 0.3 λ/4, 0.5 λ/4 SiO2 interlayer were deposited respectively on LBO by using electron beam evaporation technique.All the prepared coatings with SiO2 interlayer indicated satisfying optical behavior. This expanded our option for the thickness of an interlayer when coating on LBO substrate. The prepared films with SiO2 interlayer showed better adhesion than that without any interlayer. The thickness of the interlayer affected the adhesion, the adhesion for the coating with 0.5 λ/4 SiO2 interlayer was not as good as the other two.     

Accuracy design of ultra-low residual reflection coatings for laser optics

Refractive index inhomogeneity is one of the important characteristics of optical coating material, which is one of the key factors to produce loss to the ultra-low residual reflection coatings except using the refractive index inhomogeneity to obtain gradient-index coating. In the normal structure of antireflection coatings for center wavelength at 532 nm, the physical thicknesses of layer H and layer L are 22.18 nm and 118.86 nm, respectively. The residual reflectance caused by refractive index inhomogeneity(the degree of inhomogeneous is between -0.2 and 0.2) is about 200 ppm, and the minimum reflectivity wavelength is between 528.2 nm and 535.2 nm. A new numerical method adding the refractive index inhomogeneity to the spectra calculation was proposed to design the laser antireflection coatings, which can achieve the design of antireflection coatings with ppm residual reflection by adjusting physical thickness of the couple layers. When the degree of refractive index inhomogeneity of the layer H and layer L is-0.08 and 0.05 respectively, the residual reflectance increase from zero to 0.0769% at 532 nm. According to the above accuracy numerical method, if layer H physical thickness increases by 1.30 nm and layer L decrease by 4.50 nm, residual reflectance of thin film will achieve to 2.06 ppm. When the degree of refractive index inhomogeneity of the layer H and layer L is 0.08 and -0.05 respectively, the residual reflectance increase from zero to 0.0784% at 532 nm. The residual reflectance of designed thin film can be reduced to 0.8 ppm by decreasing the layer H of 1.55 nm while increasing the layer L of 4.94 nm.     

Enhanced laser induced damage threshold of dielectric antireflection coatings by the introduction of one interfacial layer

A new method for increasing laser induced damage threshold (LIDT) of dielectric antireflection (AR) coating is proposed. Compared with AR film stack of H2.5L (H:HfO2, L:SiO2) on BK7 substrate, SiO2 interfacial layer with four quarter wavelength optical thickness (QWOT) is deposited on the substrate before the preparation of H2.5L film. It is found that the introduction of SiO2 interfacial layer with a certain thickness is effective and flexible to increase the LIDT of dielectric AR coatings. The measured LIDT is enhanced by about 50%, while remaining the low reflectivity with less than 0.09% at the center wavelength of 1064 nm. Detailed mechanisms of the LIDT enhancement are discussed.     

Amorphous Er2O3 films for antireflection coatings

This paper reports that stoichiometric, amorphous, and uniform Er2O3 films are deposited on Si(001) substrates by a radio frequency magnetron sputtering technique. Ellipsometry measurements show that the refractive index of the Er2O3 films is very close to that of a single layer antireflection coating for a solar cell with an air surrounding medium during its working wavelength. For the 90-nm-thick film, the reflectance has a minimum lower than 3% at the wavelength of 600 nm and the weighted average reflectances (400-1000 nm) is 11.6%. The obtained characteristics indicate that Er2O3 films could be a promising candidate for antireflection coatings in solar cells.     

248 nm高反膜抗激光损伤性能

用电子束蒸发法在熔融石英基底上沉积了适用于248nm的HfO2/SiO2高反膜,为提高其抗激光损伤能力,设计并制备了两种保护层,一种是在常规高反膜系的基础上镀制二分之一波长厚度的SiO2保护层,另一种是用Al2O3/MgF2做保护层。测试了3种高反膜样品的激光损伤情况,通过损伤形貌的变化分析了两种保护层使抗激光损伤能力提高的原因以及存在的问题。     

An effective reflectance method for designing broadband antireflection films coupled with solar cells

The solar spectrum covers a broad wavelength range,which requires that antireflection coating(ARC) is effective over a relatively wide wavelength range for more incident light coming into the cell.In this paper,we present two methods to measure the composite reflection of SiO2/ZnS double-layer ARC in the wavelength ranges of 300-870 nm(dualjunction) and 300-1850 nm(triple-junction),under the solar spectrum AM0.In order to give sufficient consideration to the ARC coupled with the window layer and the dispersion effect of the refractive index of each layer,we use multidimensional matrix data for reliable simulation.A comparison between the results obtained from the weighted-average reflectance(WAR) method commonly used and that from the effective-average reflectance(EAR) method introduced here shows that the optimized ARC through minimizing the effective-average reflectance is convenient and available.     

Annealing effects on the optical and structural properties of Al2O3/SiO2 films as UV antireflection coatings on 4H-SiC substrates

Al₂O₃/SiO₂ films have been prepared by electron-beam evaporation as ultraviolet (UV) antireflection coatings on 4H-SiC substrates and annealed at different temperatures. The films were characterized by reflection spectra, ellipsometer system, atomic force microscopy (AFM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. As the annealing temperature increased, the minimum reflectance of the films moved to the shorter wavelength for the variation of refractive indices and the reduction of film thicknesses. The surface grains appeared to get larger in size and the root mean square (RMS) roughness of the annealed films increased with the annealing temperature but was less than that of the as-deposited. The Al₂O₃/SiO₂ films maintained amorphous in microstructure with the increase of the temperature. Meanwhile, the transition and diffusion in film component were found in XPS measurement. These results provided the important references for Al₂O₃/SiO₂ films annealed at reasonable temperatures and prepared as fine antireflection coatings on 4H-SiC-based UV optoelectronic devices.