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为提高悬臂梁的分辨率,实现悬臂梁的多功能性,设计了一种U形阵列式压阻悬臂梁.从理论上对悬臂梁的应力、噪声和灵敏度进行分析,优化了悬臂梁及力敏电阻的几何尺寸.选用多晶硅为力敏材料,基于硅微机械加工技术,制备U形阵列式悬臂梁.测量悬臂梁的噪声及灵敏度,得到多晶硅力敏材料的Hooge因子和应变灵敏度系数,分别为3×10-3和27.在6V偏压和1000Hz测量带宽条件下,计算悬臂梁的最小可探测位移为0.5nm.同时对多晶硅力敏电阻噪声的产生机理进行了探讨.
关键词:
悬臂梁
噪声
灵敏度
最小可探测位移 相似文献
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In this paper, we present the applications of Boundary Element Method (BEM) to simulate the electro-mechanical coupling responses
of Micro-Electro-Mechanical systems (MEMS). The algorithm is programmed in our research group based on BEM modeling for electrostatics
and elastostatics. Good agreement is shown while the simulation results of the pull-in voltages are compared with the theoretical/experimental
ones for some examples.
The project supported by the 973 Program (G199033108) and the national Natural Science Foundation of China (10125211) 相似文献
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Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing 下载免费PDF全文
The early stages of hydrogenated nanocrystalline silicon (nc-Si:H)
films deposited by plasma-enhanced chemical vapour deposition were
characterized by atomic force microscopy. To increase the density of
nanocrystals in the nc-Si:H films, the films were annealed by rapid
thermal annealing (RTA) at different temperatures and then analysed
by Raman spectroscopy. It was found that the recrystallization
process of the film was optimal at around 1000℃. The effects
of different RTA conditions on charge storage were characterized by
capacitance--voltage measurement. Experimental results show that
nc-Si:H films obtained by RTA have good charge storage
characteristics for nonvolatile memory. 相似文献
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