微纳加工技术在光电子领域的应用

纳米光电子器件正在成为下一代光电子器件的核心。文章介绍了电子束光刻和电感耦合等离子体刻蚀为代表的徽纳加工技术在光电子学器件中的应用。主要包括量子点激光器、量子点THz探测器和光子晶体器件。     

微纳金属光学结构制备技术及应用

微纳光学结构制备技术一直是微纳光子学器件发展的技术瓶颈.针对微纳光学结构制备技术向小尺寸、高精度和广泛应用发展的趋势,报道了基于电子束、X射线和接近式光学的混合光刻制作微纳金属光学结构技术.针对微纳光子学器件复杂图形开发了微光刻数据处理体系,基于矢量扫描电子束光刻设备在自支撑薄膜上进行1×高分辨率图形形成,利用X射线光...     

光学工艺 微细加工技术与设备

TN305.72006054700电子束光刻技术的原理及其在微纳加工与纳米器件制备中的应用=Principle of electron beamlithography and itsapplication nanofabrication and nanodevice[刊,中]/张琨(中国科学技术大学合肥微尺度物质科学国家实验室.安徽,合肥(230026)),王晓平…//电子显微学报.—2006,25(2).—97-103以几种常见的电子束曝光机为例,说明电子束光刻的工作原理和关键技术,并给出一些它在纳米器件和微纳加工方面的应用实例。图6表2参26(杨妹清)TN305.72006054701离焦写入线宽的动态高斯模型=Dynamic Gaussian modelof linewidthin defo…     

“微纳光子学”专题征稿

正征稿范围:包括但不限于微纳光子学研究领域中的物理和光学新现象、新方法和新规律,微纳光子学材料和器件,微纳加工技术,微纳光子学应用等的研究论文和综述。时间安排:全文投稿截止日期:2022年1月25日;专题出版时间:2022年第5期。特邀组稿专家:     

聚焦激光束在微纳材料中的应用

低维微纳材料因其特有的小尺寸效应以及由此而来丰富的物理性质,预示着其在后摩尔时代的电子、光电器件中将发挥重要作用。由于微纳材料的小尺寸特性,通过运用传统技术,很难实现对微纳材料的精准操控,制约了微纳材料在微型化、集成化、多元化器件中的应用。文章回顾了聚集激光技术的发展历程,重点介绍如何通过聚焦激光束实现对微纳材料的精准操控、加工与改性,并对聚焦激光技术的研究前景进行展望。     

若干新型微纳光子学器件研究

光子晶体和纳米光纤是两种重要的微纳光子学材料,各自具有非常独特的控制光子传输状态的功能,是研究微纳尺度下光与物质相互作用的重要平台,也是实现新型微纳光子学器件的重要基础.文章简要介绍了超快速低功率光子晶体全光开关、纳米光纤传感器、干涉器和介质-金属纳米线复合结构器件的研究进展.     

面向柔性光电子器件的微纳光制造关键技术与应用

柔性光电子器件对微纳制造技术提出了更高、更多维度的要求,包括大幅面、表面复杂结构、跨尺度、透明或柔性基底等。主要介绍基于相位元件调制的3D激光直写技术和紫外连续变频光刻技术,它们可分别实现复杂表面浮雕结构和像素化纳米结构的精确制备。此外微纳结构限定性生长或涂布方法提供了一种绿色环保的材料功能化手段。借助微纳结构图形化、功能化平台,最后介绍了新型柔性光电子材料/器件的应用创新。可以预见,微纳光制造技术将推动柔性光电子产业的持续创新发展。     

微纳加工领域新著--《微纳加工及在纳米材料与器件研究中的应用》

微纳加工领域是从事物理学研究与应用开发人员,特别是从事纳米材料与器件研究的物理工作者十分关注和重视的领域。这是由于人们在对纳米材料性能的研究中发现,性能与材料的微观结构尺寸的变化关系密切。例如,随着材料尺度的减小,由于表面效应、体积效应和量子尺寸效应的影响,材料的物理性能和采用该材料制作的器件特性等都可能表现出与宏观体相材料和相关器件特性显著不同的特点。这些特点是材料性能对微观结构尺寸变化的敏感性所导致的结果。正是由于这种敏感性,使得无论在纳米材料科学问题研究还是在纳米器件发展应用中,对材料生长控制和微加工的精确程度都提出了极为苛刻的要求。所以,需要纳米、甚至原子、分子层次的微纳加工技术,以探索材料与器件的新特性。可见,基础科学的研究发展往往需要技术科学提供强有力的支持,要想探索在纳米尺度下物质的变化规律、新的性质和器件功能及可能的应用领域,同样离不开相应的技术手段。微纳加工技术作为当今高技术发展的重要领域之一,是实现功能结构与器件微纳米化的基础。借助微纳加工,人们可以按照需求来设计、制备具有优异性能的纳米材料或纳米结构及器件与装置,发展探测和分析纳米尺度下的物理、化学和生物等现象的方法和仪器,准确地表征纳米材料或纳米结构的物性,探索纳米尺度下物质运动的新规律和新现象。     

微纳卫星COTS器件应用研究

大量采用宇航级元器件进行航天器研制的模式,由于其“成本高、研制周期长、元器件性能不足”等缺点,已经难以满足微纳卫星“周期短、成本低、集成度高”的要求。因此提出了在微纳卫星上使用COTS(Commercial off-the-shelf)器件的方法;针对微纳卫星的特点,首先分析了微纳卫星对COTS器件的需要和风险,提出了COTS器件微纳卫星应用的选用原则、选用依据;在此基础上经过分析,提出了COTS元器件微纳卫星应用流程,有针对性提出了COTS器件应用的器件级和板级筛选方法,并开展了COTS器件的微纳卫星抗单粒子效应加固设计,进一步提高COTS器件应用的可靠性。通过在轨应用验证,结果表明,通过该方法选用筛选的COTS器件,在进行有效加固后可以满足微纳卫星在轨稳定运行的要求,同时为微纳卫星降低成本缩短研制周期提供了保障。该方法对COTS器件在微纳卫星中的应用提供了一般性指导意义。     

激光全息光刻技术在微纳光子结构制备中的应用进展

微纳光子结构研究随着光子学、半导体物理学及微加工技术的发展而逐渐蓬勃开展,并在其结构、理论、制备技术等方面取得了系列进展。受限于目前的微加工技术水平,要成功制备大尺度、高质量的光子材料仍然存在着一定挑战。激光全息光刻技术作为一种简便快捷的微结构制作技术已经发展成为一种经济快速制作大面积微纳超材料及光子晶体模板的重要手段。介绍了激光全息光刻技术的原理,详细阐述了该技术在制作三维面心立方、木堆积结构、金刚石结构光子晶体以及光学周期类准晶、手性超材料、周期性缺陷结构等微纳光子结构中的应用研究进展。激光全息光刻技术成功制作微纳光子结构为光子材料在更多领域的广泛应用提供了基础和方法。     

Generation of extreme ultraviolet vortex beams using computer generated holograms

We fabricate computer generated holograms for the generation of phase singularities at extreme ultraviolet (EUV) wavelengths using electron beam lithography and demonstrate their ability to generate optical vortices in the nonzero diffraction orders. To this end, we observe the characteristic intensity distribution of the vortex beam and verify the helical phase structure interferometrically. The presented method forms the basis for further studies on singular light fields in the EUV frequency range, i.e., in EUV interference lithography. Since the method is purely achromatic, it may also find applications in various fields of x ray optics.     

极紫外多层膜技术研究进展

在极紫外波段,任何材料都表现出极强的吸收特性,因此,采用多层膜实现高反射率是构建正入射式光学系统的唯一途径。本文总结了极紫外多层膜的发展进程,叙述了制备极紫外多层膜的关键技术(磁控溅射、电子束蒸发、离子束溅射)以及它们涉及的相关设备。由于多层膜反射式光学元件主要应用于极紫外光刻与极紫外天文观测,文中重点讨论了极紫外光刻系统对多层膜性能的要求,镀膜过程中的面形精度和热稳定性等问题;同时介绍了极紫外天文观测中使用的多层膜的特点,特别讨论了多层膜光栅的制备技术和亟待解决的问题。     

Multiple micro mirrors for X-ray focusing and collimation

A novel route for fabrication of compact optical system for X-rays is presented. It is based on the extensive use of tools developed for microelectronics and micromechanics: electron beam lithography, optical lithography and X-ray lithography. Virtually any shape can be obtained in order to match the system to the different needs. In this paper, we concentrate the attention on focusing system made by nested mirrors. A system for synchrotron radiation source and one for laboratory source have been designed and simulated by a ray-tracing code developed ad hoc. The main parameters and the fabrication tolerance errors have been evaluated. The first prototypes have been produced following different fabrication routes. They are presented here together with considerations for future developments.     

Characterization and optimization of the laser-produced plasma EUV source at 13.5 nm based on a double-stream Xe/He gas puff target

The paper describes a debris-free, efficient laser-produced plasma source emitting EUV radiation. The source is based on a double-stream Xe/He gas-puff. Its properties and spectroscopic signatures are characterized and discussed. The spatio-spectral features of the EUV emission are investigated. We show a large body of results related to the intensity and brightness of the EUV emission, its spatial, temporal, and angular behavior and the effect of the repetition rate as well. A conversion efficiency of laser energy into EUV in-band energy at 13.5 nm of 0.42% has been gained. The electron temperature and electron density of the source were estimated by means of a novel method using the FLY code. The experimental data and the Hullac code calculations are compared and discussed. The source is well suited for EUV metrology purposes. The potential of the source for application in EUV lithography was earlier demonstrated in the optical characterization of Mo/Si multi-layer mirrors and photo-etching of polymers.     

电子束刻蚀法制作微米/亚微米云纹光栅技术

本文应用电子束刻蚀技术并结合真空镀膜技术提出了制作电子束云纹光栅的新方法。首次提出三镀层制作双频电子束云纹光栅的新工艺。所制得的光栅可在两频率下应用电子束云纹法测量物体的变形。同一般光栅相比 ,这种双频光栅变形量程范围更大。在本研究中 ,运用电子束刻蚀法并结合真空镀膜技术制作出 0 .1μm间距 ( 10 0 0 0线 /mm光栅 )的电子束云纹光栅。应用所制作的 10 μm/1μm双频光栅与相对应的电子束参考栅干涉 ,分别得到对应的电子束云纹场。文中对制栅工艺及方法进行了详细的讨论。     

Secondary electron yield measurements of carbon covered multilayer optics

Carbon contamination on extreme ultraviolet (EUV) optics has been observed in EUV lithography. In this paper, we performed in situ monitoring of the build-up and removal of carbon contamination on Mo/Si EUV multilayers by measuring the secondary electron yield as a function of primary electron energy. An electron beam with an energy of 2 keV was used to simulate the EUV radiation induced carbon contamination. For a clean EUV multilayer, the maximum secondary electron yield is about 1.5 electrons per primary electron at a primary electron energy of 467 eV. The maximum yield reduced to about 1.05 at a primary electron energy of 322 eV when the surface was covered by a non-uniform carbon layer with a maximum thickness of 7.7 nm. By analyzing the change in the maximum secondary electron yield with the final carbon layer thickness, the limit of detection was estimated to be less than 0.1 nm.     

纳米光刻技术

纳米科学技术将成为新世纪信息时代的核心。纳米量级结构作为研究微观量子世界的重要基础之一,其制作技术是整个纳米技术的核心基础,已成为当前世界科学研究急需解决的问题。文章针对上前的科技发展情况,介绍了几种纳米光刻技术的实现新途径、发展现状和关键问题。详细阐述了波前工程、电子束光刻、离子束光刻、Ｘ射线光刻原子光刻、干涉光刻、极紫外光刻以及１５７光刻的原理和实现难点。作为下一代各种光刻技术,它们都有望实现     

极紫外光学器件辐照污染检测技术

总结并讨论了极紫外光刻技术中,有关极紫外光学器件受辐照污染的"在线"检测方法。简要介绍了极紫外光刻系统的原理、反射镜膜层结构以及表面污染产生的机理;指出光刻系统中"在线"检测的技术要求;分析了目前几种主要表面检测技术的特点;给出了每种方法在极紫外光学系统中的应用潜力;最后,指出光纤椭偏仪在极紫外光学系统的"在线"表面污染检测中具有良好的应用前景。     

Surface phenomena related to mirror degradation in extreme ultraviolet (EUV) lithography

One of the most promising methods for next generation device manufacturing is extreme ultraviolet (EUV) lithography, which uses 13.5 nm wavelength radiation generated from freestanding plasma-based sources. The short wavelength of the incident illumination allows for a considerable decrease in printed feature size, but also creates a range of technological challenges not present for traditional optical lithography. Contamination and oxidation form on multilayer reflecting optics surfaces that not only reduce system throughput because of the associated reduction in EUV reflectivity, but also introduce wavefront aberrations that compromise the ability to print uniform features. Capping layers of ruthenium, films ∼2 nm thick, are found to extend the lifetime of Mo/Si multilayer mirrors used in EUV lithography applications. However, reflectivities of even the Ru-coated mirrors degrade in time during exposure to EUV radiation. Ruthenium surfaces are chemically reactive and are very effective as heterogeneous catalysts. In the present paper we summarize the thermal and radiation-induced surface chemistry of bare Ru exposed to gases; the emphasis is on H₂O vapor, a dominant background gas in vacuum processing chambers. Our goal is to provide insights into the fundamental physical processes that affect the reflectivity of Ru-coated Mo/Si multilayer mirrors exposed to EUV radiation. Our ultimate goal is to identify and recommend practices or antidotes that may extend mirror lifetimes.     

Nanolithography in microelectronics: A review

The current status of basic photolithographic techniques allowing researchers to achieve results that seemed to be unrealistic even a short time ago is reviewed. For example, advanced DUV photolithography makes it possible to exactly reproduce IC elements 25 times smaller in size than the wavelength of an excimer laser used as a lithographic tool. Approaches owing to which optical lithography has pushed far beyond the Rayleigh-Abbe diffraction limit are considered. Among them are optical proximity correction, introduction of an artificial phase shift, immersion, double exposure, double patterning, and others. The prospects for further advancement of photolithography into the nanometer range are analyzed, and the capabilities of photolithography are compared with those of electronolithography, EUV lithography, and soft X-ray lithography