用于新一代高密度可录光盘的有机材料研究进展

本文在总结近几年来国内外文献和专利报道的最新研究成果基础上,简要阐述了新一代高密度可录光盘的数据存储机理以及激光器工作波长与有机材料薄膜最大吸收波长相匹配的要求,介绍了在蓝(紫)光波段内(350～400nm)具有显著吸收的有机材料研究概况,并讨论了这些有机材料作为新一代高密度可录光盘数据存储介质的可能性。最后,对有机材料用于新一代高密度可录光盘数据存储介质的研究重点以及今后的发展前景进行简要讨论和展望。     

近场光存储及其研究进展

本文从近场光学的超分辨原理出发详细介绍和分析了孔径探针型近场光存储技术、SIL透镜近场光存储技术和近场超分辨结构光盘存储技术等的基本原理、研究现状以及它们的优缺点及存在的问题     

激光剥蚀-电感耦合等离子体-原子发射光谱/质谱法分析中国古代钾玻璃组分

利用激光剥蚀电感耦合等离子体原子发射光谱(LA-ICP-AES)和激光剥蚀电感耦合等离子体质谱(LA-ICP-MS)分析了一批中国古代钾玻璃。样品表面磨去100μm以上,并通过预剥蚀去除风化影响,设计剥蚀路径以消除元素分布不均匀影响。通过钙铝及其它微量元素将钾玻璃分成3个亚类,它们可能有不同的配方及制造中心;研究发现,钾玻璃着色剂类型多样化,有单质Cu,Mn2+,Cu2+,Co2+等;系统研究了钾玻璃的稀土元素特征,成功区分了九只岭地区及风门岭地区的钾玻璃;对两种方法在古代玻璃分析中的特点进行了探讨。     

一种新型芴类衍生物的光谱性质研究

合成了具有大π共轭性的对称型芴类衍生物9,9-二(2-乙基已基)-2,7-二(2-(4-甲氧基)苯-2,1-乙烯基)芴(简写为MO-Flu-MO)。通过元素分析、质谱、紫外-可见光谱和红外光谱对其进行了表征。测试了该染料在乙腈、二氯甲烷、四氢呋喃和正己烷4种不同极性溶剂中的线性吸收光谱和单光子荧光谱。结果发现溶剂效应对吸收光谱和荧光光谱表现出不同程度的影响,对产生这些光谱行为的主要原因进行了讨论。     

Thiophene-fluorene derivatives with high three-photon absorption activities and their application to optical power limiting

The three-photon absorption (3PA) properties of two thiophene-fluorene derivatives (abbreviated as MOTFTBr and {ATFTBr}) have been determined by using a Q-switched Nd:YAG laser pumped with 38ps pulses at 1064nm in DMF. The measured 3PA cross-sections are 152\times 10^-78cm⁶s² and 139\times 10^-78cm⁶s², respectively. The optimized structures were obtained by AM1 calculations and the results indicate that these two molecules show nonplanar structures, and attaching different donors has different effects on the molecular structure. The charge density distributions during the excitation were also systematically studied by using AM1 method. In addition, an obvious optical power limiting effect induced by 3PA has been demonstrated for both derivatives.     

A study on the short—wavelength and high—numerical—aperture phase—change recording

In this paper, we discuss the phase-change recording at a short-wavelength (514nm) and a high numerical aperture (0.85). Effects of recording power and pulse width on the size of the recording marks are studied. The minimum recording mark with a length of approximately 220nm has been observed. The capacity of about 17GB for a single-layer disc of a 12cm diameter can be obtained. The maximum carrier-to-noise ratio reaches 45dB at a writing power of 13--14mW.     

a面白宝石单晶的温度梯度法生长及缺陷的研究

用温度梯度法(TGT)生长出了高质量的a面(11-20)白宝石单晶.通过化学腐蚀和光学显微镜研究了晶体内部的位错分布及其密度的大小,同时应用高分辨X射线四圆衍射法测定了晶体内部的完整性.     

ZnSe-ZnTe应变层超晶格远红外反射谱

本文首次报道室温下测量的分子束外延生长的ZnSe-ZnTe应变层超晶格的远红外反射谱.得到了ZnSe、ZnTe横光学声子摸.用长波长超晶格介电理论和多层吸收薄膜理论进行曲线拟合,确定Ⅱ-Ⅵ族ZnS、eZnTe材料的一些基本材料参数,如横光学声子频率、模衰减常数、模振荡强度、高频介电常数等.本文首次报道这些参数.     

两种新型芴类衍生物的三光子吸收特性研究

研究了两种新型芴类衍生物9，9_二（2_乙基已基）_2，7_二咔唑_9H_芴（简记为DCZF）和9 ，9_二（2_乙基已基）_2，7_二（2_（4_甲氧基）苯_2，1_乙烯基）芴（简记为BMOSF）在N ，N_二甲基甲酰胺（DMF）中的线性吸收和单光子荧光行为，并用脉冲宽度为38ps，重复 频率为10 Hz的1064 nm Nd：YAG脉冲激光研究了两种化合物的三光子吸收性质.结果表明： 两种新材料的最大线性吸收峰分别位于330和380nm，吸收区域覆盖了270—420 nm波段. 两种化合物的荧光带位于蓝_紫区，中心波长为369和442 nm，都具有较小的斯托克斯位移. 化合物DCZF和BMOSF的三光子吸收系数分别为γ_DCZF=678×10^{- 20} cm3/W²和γ_BMOSF=592×10^-20 cm³/W². 同时， 两种新材料还表现出明显的三光子吸收光限幅效应，当入射光强分别为8和6GW/cm²时，非线性透过率分别达到30%和45%. 关键词： 芴类衍生物 三光子吸收 光限幅 非线性透过率     

Optical Recording Properties of Metal-Azo Dye as Recording Medium with Super-Resolution Near-Field Structure

A novel metallized azo dye has been synthesized. The absorption spectra of the thin film and thermal characteristic are measured. Static optical recording properties with and without the Bi mask layer super-resolution near-field structure （Super-RENS） of the metal-azo dye are investigated. The results show that the metal-azo dye film has a broad absorbance band in the region of 450-650 nm and the maximum absorbance wavelength is located at 603 nm. It is also found that the new metallized azo dye occupies excellent thermal stability, initiatory decomposition temperature is at 270℃ and the mass loss is about 48% in a narrow temperature region （15℃）. The complex refractive index N （N = n ＋ iκ） is measured. High refractive index （n = 2.45） and low extinction coefficient （κ = 0.2） at the recording wavelength 65Ohm are attained. Static optical recording tests with and without Super-RENS are carried out using a 65Ohm semiconductor diode laser with recording power of 7mW and laser pulse duration of 200ns. The AFM images show that the diameter of recording mark on the dye film with the Bi mask layer is reduced about 42%, compared to that of recorded mark on the dye film without Super-RENS. It is indicated that Bi can well performed as a mask layer of the dye recording layer and the metallized azo dye can be a promising candidate for recording media with the super-resolution near-field structure.