Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-kappa gate dielectric

By solving Poisson's equation in both semiconductor and gate insulator regions in the cylindrical coordinates, an analytical model for a dual-material surrounding-gate (DMSG) metal-oxide semiconductor field-effect transistor (MOSFET) with a high-kappa gate dielectric has been developed. Using the derived model, the influences of fringing-induced barrier lowering (FIBL) on surface potential, subthreshold current, DIBL, and subthreshold swing are investigated. It is found that for the same equivalent oxide thickness, the gate insulator with high-kappa dielectric degrades the short-channel performance of the DMSG MOSFET. The accuracy of the analytical model is verified by the good agreement of its results with that obtained from the ISE three-dimensional numerical device simulator.     

Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-κ gate dielectric

By solving Poisson’s equation in both semiconductor and gate insulator regions in the cylindrical coordinates, an analytical model for a dual-material surrounding-gate (DMSG) metal–oxide semiconductor field-effect transistor (MOSFET) with a high-κ gate dielectric has been developed. Using the derived model, the influences of fringing-induced barrier lowering (FIBL) on surface potential, subthreshold current, DIBL, and subthreshold swing are investigated. It is found that for the same equivalent oxide thickness, the gate insulator with high-κ dielectric degrades the short-channel performance of the DMSG MOSFET. The accuracy of the analytical model is verified by the good agreement of its results with that obtained from the ISE three-dimensional numerical device simulator.     

The influence and explanation of fringing-induced barrier lowering on sub-100 nm MOSFETs with high-k gate dielectrics

The fringing-induced barrier lowering(FIBL) effect of sub-100 nm MOSFETs with high-k gate dielectrics is investigated using a two-dimensional device simulator.An equivalent capacitance theory is proposed to explain the physics mechanism of the FIBL effect.The FIBL effect is enhanced and the short channel performance is degraded with increasing capacitance.Based on equivalent capacitance theory,the influences of channel length,junction depth,gate/lightly doped drain(LDD) overlap length,spacer material and spacer width on FIBL is thoroughly investigated.A stack gate dielectric is presented to suppress the FIBL effect.     

A novel high performance TFS SJ IGBT with a buried oxide layer

A novel high performance trench field stop(TFS) superjunction(SJ) insulated gate bipolar transistor(IGBT) with a buried oxide(BO) layer is proposed in this paper. The BO layer inserted between the P-base and the SJ drift region acts as a barrier layer for the hole-carrier in the drift region. Therefore, conduction modulation in the emitter side of the SJ drift region is enhanced significantly and the carrier distribution in the drift region is optimized for the proposed structure. As a result, compared with the conventional TFS SJ IGBT(Conv-SJ), the proposed BO-SJ IGBT structure possesses a drastically reduced on-state voltage drop(Vce(on)) and an improved tradeoff between Vce(on)and turn-off loss(Eoff), with no breakdown voltage(BV) degraded. The results show that with the spacing between the gate and the BO layer Wo = 0.2 μm, the thickness of the BO layer Lo = 0.2 μm, the thickness of the drift region Ld = 90 μm, the half width and doping concentration of the N- and P-pillars Wn = Wp = 2.5 μm and Nn = Np = 3 × 1015cm-3, the Vce(on)and Eoffof the proposed structure are 1.08 V and 2.81 mJ/cm2with the collector doping concentration Nc = 1×1018cm-3and 1.12 V and1.73 mJ/cm2with Nc = 5 × 1017cm-3, respectively. However, with the same device parameters, the Vce(on)and Eofffor the Conv-SJ are 1.81 V and 2.88 mJ/cm2with Nc = 1 × 1018cm-3and 1.98 V and 2.82 mJ/cm2with Nc = 5 × 1017cm-3,respectively. Meanwhile, the BV of the proposed structure and Conv-SJ are 1414 V and 1413 V, respectively.     

A Simple Scheme for Realizing a Multiqubit Controlled-Phase Gate Through a Resonant Interaction of Three-Level Atoms with a Single-Mode Cavity

A very simpJe theoretical scheme is proposed to implement two-and three-qubit controlled-phase gates firstly only using a single resonant interaction between ladder-type three-level atoms and the single-mode cavity. In the presented protocol, the quantum information is encoded on the stable ground states of the atoms （as the controlling qubits） and the zero- and one-photon Fock states of cavity-field （as the target qubit）. Under the influence of the atomic spontaneous emission, the decay of the cavity-mode, and deviation of the coupling strength, the three-qubit controlled- phase gate may have a comparatively high fidelity. The experimental feasibility of controlled-phase gate and the ease that is extended to realize N-qubit controlled-phase gate are also discussed.     

Quantum Information Processing in a Coupled Cavity Array

We consider a one-dimensional array of L identical coupled cavities, and each cavity is doped with a two-level qubit. Experimentally, it has been developed in several varieties by the newest technology. We find that the one-qubit quantum state can be perfectly transferred through the cavity array, and the entanglement between the first two qubits can also be transferred to the last two qubits. In addition, we successfully realized the entangling gate and swap gate in the coupled cavity array.     

Breakdown characteristics of AIGaN/GaN Schottky barrier diodes fabricated on a silicon substrate

In this work, the breakdown characteristics of AlGaN/GaN planar Schottky barrier diodes （SBDs） fabricated on the silicon substrate are investigated. The breakdown voltage （BV） of the SBDs first increases as a function of the anodeto-cathode distance and then tends to saturate at larger inter-electrode spacing. The saturation behavior of the BV is likely caused by the vertical breakdown through the intrinsic GaN buffer layer on silicon, which is supported by the post-breakdown primary leakage path analysis with the emission microscopy. Surface passivation and field plate termination are found effective to suppress the leakage current and enhance the BV of the SBDs. A high BV of 601 V is obtained with a low on-resistance of 3.15 mΩ·cm^2.     

A threshold voltage analytical model for high-k gate dielectric MOSFETs with fully overlapped lightly doped drain structures

We investigate the influence of voltage drop across the lightly doped drain(LDD) region and the built-in potential on MOSFETs,and develop a threshold voltage model for high-k gate dielectric MOSFETs with fully overlapped LDD structures by solving the two-dimensional Poisson’s equation in the silicon and gate dielectric layers.The model can predict the fringing-induced barrier lowering effect and the short channel effect.It is also valid for non-LDD MOSFETs.Based on this model,the relationship between threshold voltage roll-off and three parameters,channel length,drain voltage and gate dielectric permittivity,is investigated.Compared with the non-LDD MOSFET,the LDD MOSFET depends slightly on channel length,drain voltage,and gate dielectric permittivity.The model is verified at the end of the paper.     

Aspects of the dielectric upstream region barrier discharge in a plasma jet with configurations

A plasma column with a length of about 65 cm is generated in the upstream region of a plasma jet using dielectric barrier discharge configurations. The effects of experimental parameters such as the amplitude of the applied voltage and the driving frequency are investigated in aspects of the plasma column by the optical method. Results show that both the plasma length and the propagating velocity, as well as the discharge current, increase with the increase in the applied voltage or its frequency. The discharge mechanism is analysed qualitatively based on streamer theory, where photo-ionization is important. Furthermore, optical emission spectroscopy is used to investigate the electric field intensity of the upstream region.     

Efficient Atomic One-Qubit Phase Gate Realized by a Cavity QED and Identical Atoms System

We present a scheme to implement a one-qubit phase gate with a two-level atom crossing an optical cavity in which some identical atoms are trapped. One can conveniently acquire an arbitrary phase shift of the gate by properly choosing the number of atoms trapped in the cavity and the velocity of the atom crossing the cavity. The present scheme provides a very simple and efficient way for implementing one-qubit phase gate.     

Photon tunneling and transmittance resonance through a multi-layer structure with a left-handed material

This paper investigates the photon tunneling and transmittance resonance through a multi-layer structure including a left-handed material(LHM).An analytical expression for the transmittance in a five-layer structure is given by the analytical transfer matrix method.The transmittance is studied as a function of the refractive index and the width of the LHM layer.The perfect photon tunneling results from the multi-layer structure,especially from the relation between the magnitude of the refractive index and the width of the LHM layer and those of the adjoining layers.Photons may tunnel through a much greater distance in this structure.Transmittance resonance happens,the peaks and valleys appear periodically at the resonance thickness.For an LHM with inherent losses,the perfect transmittance is suppressed.     

Implementation of a nonlocal N-qubit conditional phase gate using the nitrogen–vacancy center and microtoroidal resonator coupled systems

Implementation of a nonlocal multi-qubit conditional phase gate is an essential requirement in some quantum infor- mation processing （QIP） tasks. Recently, a novel solid-state cavity quantum electrodynamics （QED） system, in which the nitrogen-vacancy （NV） center in diamond is coupled to a microtoroidal resonator （MTR）, has been proposed as a poten- tial system for hybrid quantum information and computing. By virtue of such systems, we present a scheme to realize a nonlocal N-qubit conditional phase gate directly. Our scheme employs a cavity input-output process and single-photon interference, without the use of any auxiliary entanglement pair or classical communication. Considering the currently available technologies, our scheme might be quite useful among different nodes in quantum networks for large-scaled QIP.     

Analysis of flatband voltage shift of metallhigh-k/Si02/Si stack based on energy band alignment of entire gate stack

A theoretical model of flatband voltage （VFB） of metal/high-k/Si02/Si stack is proposed based on band alignment of entire gate stack, i.e., the VFB is obtained by simultaneously considering band alignments of metal/high-k, high-k/SiO2 and SiO2/Si interfaces, and their interactions. Then the VFB of TiN/HfO2/SiO2/Si stack is experimentally obtained and theoretically investigated by this model. The theoretical calculations are in good agreement with the experimental results. Furthermore, both positive VFB shift of TiN/HfO2/SiO2/Si stack and Fermi level pinning are successfully interpreted and attributed to the dielectric contact induced gap states at TiN/HfO2 and HfO2/SiO2 interfaces.     

Efficiency enhancement of an InGaN light-emitting diode with a p-AIGaN/GaN superlattice last quantum barrier

In this study, the efficiency droop of an InGaN light-emitting diode （LED） is reduced slgnlncanUy oy using a p-AlGaN/GaN superlattice last quantum barrier. The reduction in efficiency droop is mainly caused by the decrease of electron current leakage and the increase of hole injection efficiency, which is revealed by investigating the light currents, internal quantum efficiencies, energy band diagrams, carrier concentrations, carrier current densities, and radiative recombination efficiencies of three LED structures with the advanced physical model of semiconductor device （APSYS）.     

Behaviour of the current in a two-dimensional Buttiker-Landauer motor with entropic barriers

The behaviour of the current in a two-dimensional Biittiker-Landauer motor, which is a position-dependent temperature-driven Brownian motor, is investigated in the presence of entropic and energy barriers. It is found that the motion of the Brownian particles is influenced by the shape of the channel. The existence of an entropic barrier can cause an asymmetric current as the flatness ratio of the shape varies. There exists an optimized flatness ratio （nonzero） at which the current reaches its maximum value.     

Transmission and Dwell Time Oscillations Caused by Coexistence of Tunneling and Propagating in a Trapezoidal Barrier

Abstract A refined one of our exactly solvable trapezoidal barrier potential model [Thin Solids Films, 414 （2002） 136）] for metal-insulator-metal tunnel junctions has Seen presented. According to the refined model, the longitudinal kinetic energy （ExL） and the effective mass （m^＊L） of the electron8 in the electrode on the left of the barrier distinguish from that on the right. It is found that as ExL is greater than the shorter side of the resultant trapezoidal barrier potential, there will be a coexistence of the tunneling and propagating in the barrier. The results demonstrate that the damped oscillating electron waves localized in the propagating barrier subregion lead to the oscillation and enhancement in the transmission coefficient DT and dwell time TD. For the barrier height φ1=2.6 eV and φ2 = 1.4 eV, the width d=22 A and ExL = 1.0 eV, DT and TD have a maximum of 0.054 and 0.58x10^-15 s at V = 2.04 V and 2.18 V, respectively. This suggests that a real tunneling may be a hybrid.     

A1/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights

This paper investigates the current-voltage （I-V） characteristics of Al/Ti/4H-SiC Schottky barrier diodes （SBDs） in the temperature range of 77 K-500 K, which shows that Al/Ti/4H SiC SBDs have good rectifying behaviour. An abnormal behaviour, in which the zero bias barrier height decreases while the ideality factor increases with decreasing temperature （T）, has been successfully interpreted by using thermionic emission theory with Gaussian distribution of the barrier heights due to the inhomogeneous barrier height at the A1/Ti/4H-SiC interface. The effective Richardson constant A＊ = 154 A/cm2 . K2 is determined by means of a modified Richardson plot In（I0/T2） - （qσ）2/2（κT）2 versus q/kT, which is very close to the theoretical value 146 A/cm2 · K2.     

Comparison of electrical characteristic between AIN/GaN and AIGaN/GaN heterostructure Schottky diodes

Ni/Au Schottky contacts on A1N/GaN and A1GaN/GaN heterostructures are fabricated. Based on the measured current-voltage and capacitance-voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as Schottky barrier height, turn-on voltage, reverse breakdown voltage, ideal factor, and the current-transport mechanism, are analyzed and then compared with those of an A1GaN/GaN diode by self-consistently solving Schrodinger＇s and Poisson＇s equations. It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes. However, more dislocation defects and a thinner barrier layer for AlN/GaN heterostrncture results in a larger tunneling probability, and causes a larger leakage current and lower reverse breakdown voltage, even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an A1GaN/GaN diode.     

Speed Geometric Quantum Logical Gate Based on Double-Hamiltonian Evolution under Large-Detuning Cavity QED Model

We introduce the double-Hamiltonian evolution technique approach to investigate the unconventional geometric quantum logical gate with dissipation under the model of many identical three-level atoms in a cavity~ driven by a classical fieM. Our concrete calculation is made for the case of two atoms for the large-detuning interaction of the atoms with the cavity mode. The main advantage of our scheme is of eliminating the photon flutuation in the cavity mode during the gating. The corresponding analytical results will be helpful for experimental realization of speed geometric quantum logical gate in real cavities.     

Realization of Two-Qutrit Quantum Gates with Control Pulses

We investigate the realization of 2-qutrit logic gate in a bipartite 3-level system with qusi-Ising interaction. On the basis of Caftan decomposition of matrices, the unitary matrices of 2-qutrit are factorized into products of a series of realizable matrices. It is equivalent to exerting a certain control field on the system, and the control goal is usually gained by a sequence of control pulses. The general discussion on the realization of 2-qutrit logic gate is made first, and then the realization of the ternary SWAP gate and the ternary √SWAP gate are discussed specifically, and the sequences of control pulses and drift processes implementing these gates are given.