AOTF成像光谱仪声光晶体光谱传递函数的研究

基于AOTF的成像光谱仪是集图像、光谱及偏振信息为一体的新型探测仪器,仪器的光谱传递函数是衡量仪器性能的一项重要指标。介绍了单AOTF型和双AOTF型成像光谱仪的工作原理,利用光学域光谱透过函数,推导了以波数Δv表示的单、双型AOTF光谱传递函数,在工作波段为400 nm~900 nm内,计算对比了单、双AOTF型光谱传递函数,并对影响双AOTF型光谱传递函数的因素进行了仿真分析,最后对仪器参数的选取进行了分析和讨论。结果表明:在入射光极角30°, 声光互作用长度5 mm工作波段下,当双AOTF型成像光谱仪工作中心波长相等时,相比同一工作中心波长时的单AOTF型成像光谱仪,光谱传递函数提高了68%;当工作中心波长不相等时,双AOTF型光谱传递函数并不绝对优于单AOTF型,存在临界值。     

Performance enhancement of an InGaN light-emitting diode with an AIGaN/InGaN superlattice electron-blocking layer

The efficiency enhancement of an InGaN light-emitting diode （LED） with an A1GaN/InGaN superlattice （SL） electron-blocking layer （EBL） is studied numerically, which involves the light-current performance curve, internal quan- tum efficiency electrostatic field band wavefunction, energy band diagram carrier concentration, electron current density, and radiative recombination rate. The simulation results indicate that the LED with an A1GaN/InGaN SL EBL has better optical performance than the LED with a conventional rectangular A1GaN EBL or a normal A1GaN/GaN SL EBL because of the appropriately modified energy band diagram, which is favorable ibr the injection of holes and confinement of elec- trons. Additionally, the efficiency droop of the LED with an AIGaN/InGaN SL EBL is markedly improved by reducing the polarization field in the active region.     

量子阱数量变化对InGaN/AlGaN LED的影响

采用软件理论分析的方法分析了InGaN/AlGaN量子阱数量变化对发光二极管内量子效率、电子空穴浓度分布、载流子溢出产生的影响。分析结果表明:量子阱的个数不是越多越好,LED的光学性质和量子阱的个数并不成线性关系。量子阱个数太少时,电流溢出现象较明显;而当量子阱个数太多时,极化现象明显,且会造成材料浪费。因此应根据工作电流选择合适的量子阱个数。     

新型电子阻挡层结构对蓝光InGaN发光二极管性能的提高

分别对3种不种电子阻挡层的蓝光AlGaN LED进行数值模拟研究。3种阻挡层结构分别为传统AlGaN电子阻挡层,AlGaN-GaN-AlGaN电子阻挡层和Al组分渐变的AlGaN-GaN-AlGaN电子阻挡层。此外对这对三种器件的活性区的载流子浓度、能带图、静电场和内量子效率进行比较和分析。研究结果表明,相较于传统AlGaN和AlGaN-GaN-AlGaN两种电子阻挡层的LED,具有Al组分渐变的AlGaN-GaN-AlGaN电子阻挡层结构的LED具有较高的空穴注入效率、较低的电子外溢现象和较小的静电场(活性区)。同时,具有Al组分渐变的AlGaN-GaN-AlGaN电子阻挡层结构的LED的efficiency droop现象也得到一定的缓解。     

三维荧光光谱二阶校正方法测定血浆样中喷昔洛韦及泛昔洛韦含量

利用三维荧光光谱即激发发射矩阵荧光光谱与化学计量学的基于平行因子分析(PARAFAC)算法的二阶校正方法相结合,尝试对血浆样中泛昔洛韦及其活性代谢物喷昔洛韦的含量进行同时定量测定.当算法选取组分数为3时,解析得到血浆样中泛昔洛韦和喷昔洛韦的平均回收率分别为(102.4±3.4)%和(105.1±2.3)%.结果表明该分析策略可准确可靠地实现血浆样中泛昔洛韦和喷昔洛韦的直接同时快速定量测定.     

基于区间值模糊点和区间值模糊集邻属关系的区间值模糊子群

利用区间值模糊集的区间值水平截集的概念,给出了区间值模糊点与区间值模糊集邻属关系的定义,将这种邻属关系应用到区间值模糊代数的研究中,从而给出了(α,β)-区间值模糊子群的定义。通过研究16种(α,β)-区间值模糊子群,指出有意义的是(∈,∈)((∈,∈∨q),(∈∧q,∈))-区间值模糊子群。证明了群G的一个区间值模糊子集A为(∈,∈)((∈,∈∨q)或(∈∧q,∈))-区间值模糊子群的充要条件是对所有的λ=[a1,a2]≤[0.5,0.5],[0.5,0.5]μ=[b1,b2],其区间值水平截集Aλ和Aμ(Aλ或Aμ)为G的三值模糊子群。从而建立了基于区间值模糊点和区间值模糊集邻属关系的新的区间值模糊子群理论。     

Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer

Blue InGaN light-emitting diodes (LEDs) with a conventional electron blocking layer (EBL), a common n-AlGaN hole blocking layer (HBL), and an n-AlGaN HBL with gradual Al composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band diagram, electrostatic field, and internal quantum efficiency (IQE). The results indicate that LEDs with an n-AlGaN HBL with gradual Al composition exhibit better hole injection efficiency, lower electron leakage, and a smaller electrostatic field in the active region than LEDs with a conventional p-AlGaN EBL or a common n-AlGaN HBL. Meanwhile, the efficiency droop is alleviated when an n-AlGaN HBL with gradual Al composition is used.     

Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer

The efficiency enhancement of an InGaN light-emitting diode(LED) with an AlGaN/InGaN superlattice(SL)electron-blocking layer(EBL) is studied numerically,which involves the light-current performance curve,internal quantum efficiency electrostatic field band wavefunction,energy band diagram carrier concentration,electron current density,and radiative recombination rate.The simulation results indicate that the LED with an AlGaN/InGaN SL EBL has better optical performance than the LED with a conventional rectangular AlGaN EBL or a normal AlGaN/GaN SL EBL because of the appropriately modified energy band diagram,which is favorable for the injection of holes and confinement of electrons.Additionally,the efficiency droop of the LED with an AlGaN/InGaN SL EBL is markedly improved by reducing the polarization field in the active region.     

纤锌矿BexZn1-xO合金能隙弯曲系数的第一原理研究

采用密度泛函理论框架下的第一性原理平面波超软赝势方法, 对纤锌矿Be_xZn_1-xO合金进行能隙特性、弯曲系数和结构参数的计算. 结果表明: Be_xZn_1-xO合金的能隙和弯曲系数都随Be掺杂组分的增大而增大. 通过修正Be_xZn_1-xO合金的能隙值得知其合金弯曲系数b为6.02 eV, 这与实验值接近. 纤锌矿Be_xZn_1-xO合金的能隙弯曲系数过大主要来源于体积形变和电荷转移的贡献. 文中还分析了Be_xZn_1-xO合金的晶格常数、 平均键长和平均次近邻原子距离与Be组分的关系.     

Efficiency enhancement of an InGaN light-emitting diode with a p-AIGaN/GaN superlattice last quantum barrier

In this study, the efficiency droop of an InGaN light-emitting diode （LED） is reduced slgnlncanUy oy using a p-AlGaN/GaN superlattice last quantum barrier. The reduction in efficiency droop is mainly caused by the decrease of electron current leakage and the increase of hole injection efficiency, which is revealed by investigating the light currents, internal quantum efficiencies, energy band diagrams, carrier concentrations, carrier current densities, and radiative recombination efficiencies of three LED structures with the advanced physical model of semiconductor device （APSYS）.