近紫外LED用绿色荧光粉Ba0.11Sr2.89-2x-2yCexTbyNax+yAlO4F发光特性及Ce3+→Tb3+之间能量传递

高温固相法合成Ba0.11Sr2.89-2x-2yCexTbyNax+yAlO4F荧光粉,并用X射线衍射(XRD)、荧光光谱(PL)测定分析了其晶体结构及光谱性质。结果表明:当Tb3+掺杂量x=0.07时,发光强度最高,发射主峰位于545 nm,并进一步研究了Ce3+,Tb3+共掺的样品中Ce3+→Tb3+能量传递过程。其次,测试由近紫外LED(~380 nm)和三基色荧光粉(Ba0.11Sr2.89Ce0.01Tb0.07Na0.08AlO4F,BAM and Sr2Si5N8:Eu2+)封装的白光LED光电性能,其色品坐标(x=0.3223,y=0.3408),色温5500 K,显色指数为86.26。因此,Ba0.11Sr2.89-2x-2yCexTbyNax+yAlO4F可作为一种潜在的适用于近紫外LED激发的荧光材料。     

新型LED太阳模拟器光学系统设计及仿真

针对现有LED太阳模拟器同时解决准直性、辐照度均匀性、光谱匹配性三大技术指标的难度较高的问题,基于光电一体化二次光学设计,提出一种简便、高效且可实现大功率的LED太阳模拟器光学系统设计方法。采用小角度准直透镜和抛物面镜来整合光源,通过混光棒和微结构进行匀光,最后利用抛物面镜实现光线的准直输出,基于同轴准直的设计思想完成LED太阳模拟器的设计。利用光学软件LightTools对LED太阳模拟器光学系统进行模拟仿真与分析优化,实验结果表明:在直径为260 mm的有效辐照面上辐照不均匀度为2.5%、准直角为1.5°。     

Performance enhancement of an InGaN light-emitting diode with an AIGaN/InGaN superlattice electron-blocking layer

The efficiency enhancement of an InGaN light-emitting diode （LED） with an A1GaN/InGaN superlattice （SL） electron-blocking layer （EBL） is studied numerically, which involves the light-current performance curve, internal quan- tum efficiency electrostatic field band wavefunction, energy band diagram carrier concentration, electron current density, and radiative recombination rate. The simulation results indicate that the LED with an A1GaN/InGaN SL EBL has better optical performance than the LED with a conventional rectangular A1GaN EBL or a normal A1GaN/GaN SL EBL because of the appropriately modified energy band diagram, which is favorable ibr the injection of holes and confinement of elec- trons. Additionally, the efficiency droop of the LED with an AIGaN/InGaN SL EBL is markedly improved by reducing the polarization field in the active region.     

新型电子阻挡层结构对蓝光InGaN发光二极管性能的提高

分别对3种不种电子阻挡层的蓝光AlGaN LED进行数值模拟研究。3种阻挡层结构分别为传统AlGaN电子阻挡层,AlGaN-GaN-AlGaN电子阻挡层和Al组分渐变的AlGaN-GaN-AlGaN电子阻挡层。此外对这对三种器件的活性区的载流子浓度、能带图、静电场和内量子效率进行比较和分析。研究结果表明,相较于传统AlGaN和AlGaN-GaN-AlGaN两种电子阻挡层的LED,具有Al组分渐变的AlGaN-GaN-AlGaN电子阻挡层结构的LED具有较高的空穴注入效率、较低的电子外溢现象和较小的静电场(活性区)。同时,具有Al组分渐变的AlGaN-GaN-AlGaN电子阻挡层结构的LED的efficiency droop现象也得到一定的缓解。     

Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer

The efficiency enhancement of an InGaN light-emitting diode(LED) with an AlGaN/InGaN superlattice(SL)electron-blocking layer(EBL) is studied numerically,which involves the light-current performance curve,internal quantum efficiency electrostatic field band wavefunction,energy band diagram carrier concentration,electron current density,and radiative recombination rate.The simulation results indicate that the LED with an AlGaN/InGaN SL EBL has better optical performance than the LED with a conventional rectangular AlGaN EBL or a normal AlGaN/GaN SL EBL because of the appropriately modified energy band diagram,which is favorable for the injection of holes and confinement of electrons.Additionally,the efficiency droop of the LED with an AlGaN/InGaN SL EBL is markedly improved by reducing the polarization field in the active region.     

Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer

Blue InGaN light-emitting diodes (LEDs) with a conventional electron blocking layer (EBL), a common n-AlGaN hole blocking layer (HBL), and an n-AlGaN HBL with gradual Al composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band diagram, electrostatic field, and internal quantum efficiency (IQE). The results indicate that LEDs with an n-AlGaN HBL with gradual Al composition exhibit better hole injection efficiency, lower electron leakage, and a smaller electrostatic field in the active region than LEDs with a conventional p-AlGaN EBL or a common n-AlGaN HBL. Meanwhile, the efficiency droop is alleviated when an n-AlGaN HBL with gradual Al composition is used.     

The influence of AlGaN/GaN superlattices as electron blocking layers on the performance of blue InGaN light-emitting diodes

P-AlGaN/P-GaN superlattices are investigated in blue InGaN light-emitting diodes as electron blocking layers.The simulation results show that efficiency droop is markedly improved due to two reasons:(i) enhanced hole concentration and hole carrier transport efficiency in AlGaN/GaN superlattices,and(ii) enhanced blocking of electron overflow between multiple quantum-wells and AlGaN/GaN superlattices.     

新型LED太阳模拟器光学系统设计及仿真

针对现有LED太阳模拟器同时解决准直性、辐照度均匀性、光谱匹配性三大技术指标的难度较高的问题，基于光电一体化二次光学设计，提出一种简便、高效且可实现大功率的LED太阳模拟器光学系统设计方法。采用小角度准直透镜和抛物面镜来整合光源，通过混光棒和微结构进行匀光，最后利用抛物面镜实现光线的准直输出，基于同轴准直的设计思想完成LED太阳模拟器的设计。利用光学软件LightTools对LED太阳模拟器光学系统进行模拟仿真与分析优化，实验结果表明:在直径为260 mm的有效辐照面上辐照不均匀度为2.5%、准直角为1.5°。     

Efficiency enhancement of an InGaN light-emitting diode with a p-AIGaN/GaN superlattice last quantum barrier

In this study, the efficiency droop of an InGaN light-emitting diode （LED） is reduced slgnlncanUy oy using a p-AlGaN/GaN superlattice last quantum barrier. The reduction in efficiency droop is mainly caused by the decrease of electron current leakage and the increase of hole injection efficiency, which is revealed by investigating the light currents, internal quantum efficiencies, energy band diagrams, carrier concentrations, carrier current densities, and radiative recombination efficiencies of three LED structures with the advanced physical model of semiconductor device （APSYS）.     

基于LD激发荧光粉白光光源的窄光束照明光学系统设计

蓝光半导体激光器激发荧光粉产生白光光源技术发展迅速，但由于大功率蓝光半导体激光器在快轴、慢轴方向的光场分布差别较大，使得日前激光照明整体光学性能仍旧较差，难以实现大规模推广应用。针对该问题，设计了一款高质量激光照明光学系统，基于蒙特卡洛光线追踪理论，对激光光束进行准直调控、均匀光斑整形以及对荧光片进行设计，使得整体光源模块各元件得到最佳整合，最终实现了窄光束激光照明。仿真结果表明:激光光源的光收集率达98.3%，激光光斑的不均匀度为1.7%，白光均匀度为98%，光斑是出射准直角为1.6°的方形窄光束白光光斑。