Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-κ gate dielectric |
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| Authors: | Li Cong Zhuang Yi-Qi Zhang Li and Bao Jun-Lin |
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| Affiliation: | School of Microelectronics, Xidian University, Xi’an 710071, China |
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| Abstract: | By solving Poisson’s equation in both semiconductor and gate insulator regions in the cylindrical coordinates, an analytical model for a dual-material surrounding-gate (DMSG) metal–oxide semiconductor field-effect transistor (MOSFET) with a high-κ gate dielectric has been developed. Using the derived model, the influences of fringing-induced barrier lowering (FIBL) on surface potential, subthreshold current, DIBL, and subthreshold swing are investigated. It is found that for the same equivalent oxide thickness, the gate insulator with high-κ dielectric degrades the short-channel performance of the DMSG MOSFET. The accuracy of the analytical model is verified by the good agreement of its results with that obtained from the ISE three-dimensional numerical device simulator. |
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| Keywords: | high-k gate dielectric fringing-induced barrier lowering analytical model |
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