用于红外激光防护的高开关率VO2薄膜

采用反应离子束溅射和后退火处理技术在石英玻璃基底上制备了具有纳米粒子的二氧化钒(VO₂)薄膜. 该薄膜具有半导体-金属相变特性,在3 μm处的开关率达到76.6%。 热致相变实验结果给出了准确的最佳退火温度为465 ℃. 仿真、热致相变和光致相变实验都显示VO₂薄膜在红外波段具有很高的光学开关特性. 光电池防护实验结果显示VO₂薄膜将硅光电池的抗干扰能力提升了2.6倍, 证明了VO₂在激光防护中的适用性. 采用连续可调节系统研究得到VO₂在室温条件下的相变阈值功率密度为4.35 W/cm², 损伤阈值功率密度为404 W/cm²。 低相变阈值和高损伤阈值都进一步证明VO₂薄膜适用于激光防护系统。本实验制备的VO₂薄膜在光开关、光电存储器、智能窗等方面也具有广泛的应用价值.     

石墨烯/硅肖特基太阳能电池的光电特性

以甲烷作为反应气体,利用化学气相沉积法在硅衬底表面上沉积石墨烯薄膜,制备了石墨烯/硅肖特基太阳能电池.利用原子力显微镜和拉曼光谱观察了石墨烯薄膜的表面形貌,并用紫外-可见光光谱仪和光-电流测试仪器研究了石墨烯样品和太阳电池的光电特性.实验结果表明:制备的石墨烯薄膜厚度为几个原子层,薄膜表面均匀,并具有良好的电学特性,石墨烯/硅太阳能电池的能量转换效率可达3.7%.     

硅基二氧化钒相变薄膜电学特性研究

本文以原子层沉积超薄氧化铝(Al₂ O₃)为过渡层, 采用射频反应磁控溅射法在硅半导体基片上制备了颗粒致密并具有(011)择优取向的二氧化钒(VO₂)薄膜. 该薄膜具有显著的绝缘体–金属相变特性, 相变电阻变化超过3 个数量级, 热滞回线宽度约为6℃. 基于VO₂薄膜构建了平面二端器件并测试了不同温度下I-V曲线, 观测到超过2个数量级的电流跃迁幅度, 显示了优越的电致相变特性. 室温下电致相变阈值电压为8.6 V, 电致相变弛豫电压宽度约0.1 V. 随着温度升高到60℃, 其电致相变所需要的阈值电压减小到2.7 V. 本实验制备的VO₂薄膜在光电存储、开关、太赫兹调控器件中具有广泛的应用价值.     

VO$lt;sub$gt;2$lt;/sub$gt;/AZO复合薄膜的制备及其光电特性研究

采用直流磁控溅射和后退火氧化的方法在掺铝氧化锌(AZO)导电玻璃上制备了二氧化钒(VO₂)薄膜,研究了不同的退火温度、退火时间对VO₂/AZO复合薄膜制备的影响,并对复合薄膜的结构、组分、光电特性进行了测试与分析. 结果表明,导电玻璃上的AZO没有改变VO₂的取向生长,但明显改变了VO₂薄膜的表面形貌特征. 与用相同工艺和条件在普通玻璃基底上制备的VO₂薄膜相比,VO₂/AZO复合薄膜的相变温度降低约25 ℃,热滞回线宽度收窄至6 ℃,相变前后可见光透过率均在50%以上,1500 nm处红外透过率约为55%和21%,电阻率变化达3 个数量级. 该复合薄膜表面平滑致密,制备工艺简单,性能稳定,可应用于新型光电器件. 关键词： 2')" href="#">VO₂ AZO 热致相变 光电特性     

甲脒碘化铅单晶基钙钛矿太阳能电池的研究

近年来,CH(NH₂)₂PbI₃(FAPbI₃)由于其带隙接近理想值而受到了广泛关注,成为钙钛矿太阳能电池中最具吸引力的光电功能材料.然而由碘甲脒(FAI)和碘化铅(PbI₂)作为前驱体制备的传统钙钛矿层化学计量比不精准,缺陷密度大,稳定性差且结晶度较低,导致钙钛矿太阳能电池性能很难进一步提高.本文采用FAPbI₃单晶制备的钙钛矿薄膜具有高结晶度,高稳定性,精确的化学计量比和低缺陷密度.单晶钙钛矿薄膜的晶粒尺寸大,晶界少,导致晶界处缺陷较少,提高了钙钛矿太阳能电池的短路电流密度(J_SC)和开路电压(V_OC),使其光电转换效率有了大幅度的提高.本文为制备高稳定性、高结晶度和低缺陷密度的钙钛矿太阳能电池提供了一种有效策略.     

非晶微晶过渡区域硅薄膜的微区喇曼散射研究

通过改变氢气对硅烷气体的稀释程度,并保持其他的沉积参量不变,用等离子体增强化学气相沉积(PECVD)方法成功地制备出处于非晶微晶相变过渡区域的硅薄膜样品.测量了样品的室温光电导和暗电导,样品的光电性能优越,在50mW·cm-2的白光照射下,光电导和暗电导的比值达到106.在室温下用微区喇曼谱研究了薄膜的微结构特性,用高斯函数对喇曼谱进行了拟合分析.结果表明,在我们的样品制备条件下,当H2和SiH4的流量比R较小时,样品表现出典型的非晶硅薄膜的结构特性;随流量比R的增大,薄膜表现出两相结构,其中的微晶成分随 关键词： 非晶硅 薄膜 喇曼散射 微结构     

半透明Cu2O/ZnO异质结的制备及其光电性能研究

为研究具有更好材料稳定性的半透明薄膜太阳能电池,本文采用直流磁控溅射技术沉积氧化亚铜(Cu_2O)薄膜和氧化锌(ZnO)薄膜,制备了Cu_2O/ZnO异质结.使用扫描电镜、X射线衍射仪、拉曼光谱仪、薄膜测定系统和太阳能模拟器,研究在不同氩/氧气体流量比的条件下制备的Cu_2O层对异质结的材料特性、光学特性及光电特性的影响.研究结果表明:在一定氩/氧气体流量比范围内制备的Cu_2O/ZnO异质结,在AM1.5的标准模拟太阳光的照射下具有一定的光电转换能力,可作为半透明太阳能电池的换能单元.     

相变区硅薄膜拉曼和红外光谱分析

采用等离子体增强化学气相沉积(PECVD)技术制备了一系列不同氢稀释率下的硅薄膜,采用拉曼散射光谱和傅里叶红外光谱技术研究了非晶/微晶相变区硅薄膜的微观结构变化,将次晶结构(paracrystalline structure)引入到非晶/微晶相变区硅薄膜结构中,提出了次晶粒体积分数(f_p),用来表征硅薄膜中程有序程度。结果表明,氢稀释率的提高导致硅薄膜经历了从非晶硅到微晶硅的相变过程,在相变区靠近非晶相的一侧,硅薄膜表现出氢含量高、结构致密和中程有序度高等特性,氢在薄膜的生长中主要起到表面钝化作用。在相变区靠近微晶相的一侧,硅薄膜具有氢含量低、晶化率高和界面体积分数小等特性,揭示了氢的刻蚀作用主控了薄膜生长过程。采用扫描电子显微镜对样品薄膜的表面形貌进行分析,验证了拉曼散射光谱和傅里叶红外光谱的分析结果。非晶/微晶相变区尤其是相变区边缘硅薄膜结构特性优良,在太阳能电池应用中适合用作硅基薄膜电池本征层。     

采用热丝辅助的新型微波电子回旋共振法制备高质量的氢化非晶硅薄膜

采用热丝辅助的新型微波电子回旋共振法制备了高质量的氢化非晶硅薄膜。在制备过程中，热丝对改进薄膜微结构，提高稳定性及光电特性方面起到了重要的作用。实验结果表明：在薄膜的微结构中，硅氢二键含量显著减少并出现了少量微晶相，其有利于改善薄膜的稳定性；在薄膜的光电特性方面，薄膜的沉积速率及光敏性分别达到了2.0nm/s和4.71*105以上。     

金属Pt薄膜上二氧化钒的制备及其电致相变性能研究

通过引入SiO₂氧化物缓冲层, 在金属Pt电极上利用射频磁控溅射技术成功制备出高质量的VO₂薄膜. 详细研究了SiO₂厚度对VO₂薄膜的晶体结构、微观形貌和绝缘体–金属相变(MIT)性能的影响. 结果表明厚度0.2 μm以上的SiO₂缓冲层能够有效 消除VO₂薄膜与金属薄膜之间的巨大应力, 制备出具有明显相变特性的VO₂薄膜. 当缓冲层达到0.7 μm以上, 获得的薄膜具有明显的(011)晶面择优取向, 表面平整致密, 相变前后电阻率变化达到3个数量级以上. 基于该技术制备了Pt-SiO₂/VO₂-Au三明治结构, 通过在垂直膜面方向施加很小的驱动电压, 观察到明显的阶梯电流跳跃, 证实实现了电致绝缘体–金属相变过程. 该薄膜制备工艺简单, 性能稳定, 器件结构灵活可应用于集成式电控功能器件. 关键词： 二氧化钒薄膜 相变特性 电致相变 阈值电压     

硅薄膜沉积过程中等离子发光基团的一维空间分布研究

使用光发射谱(OES)对甚高频等离子增强化学气相沉积(VHF-PECVD)技术沉积硅薄膜时的等离子体发光基团的空间分布进行了在线监测和研究. 研究表明：等离子体的不同发光基团都存在着一个中间强度较大的区域和两边电极附近的暗区;增大硅烷浓度和提高辉光功率都会增大SiH^*峰强度;硼烷的加入,使得SiH^*和Hα^*峰强度增大,但硼烷流量变化的影响很小;硼烷流量增大,材料的晶化率下降,而I_{［Hα^*］关键词： 甚高频等离子增强化学气相沉积 等离子体 发光基团 空间分布}     

高速沉积微晶硅薄膜光发射谱的研究

采用PR650光谱光度计对高速沉积微晶硅薄膜的生长过程进行了在线监测研究,并对所对应的材料进行了Raman谱和红外吸收谱(FTIR)的测试.结果表明：能反映材料晶化程度的I_［SiH^*］/I_［Hβ^*］比值在沉积时间为100 s之内有下降的趋势,且反应气体总流量T_fl越小下降趋势越明显,这与拉曼散射光谱对材料的结构测试结果一致;沉积5 min时I 关键词： 高速沉积 微晶硅薄膜 电子温度     

Influence of SiNx:H film properties according to gas mixture ratios for crystalline silicon solar cells

The Hydrogenated silicon nitride (SiN_x:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the SiN_x:H film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. For optimizing surface layer in crystalline silicon solar cells, by varying gas mixture ratios (SiH₄ + NH₃ + N₂, SiH₄ + NH₃, SiH₄ + N₂), the hydrogenated silicon nitride films were analyzed for its antireflection and surface passivation (electrical and chemical) properties. The film deposited with the gas mixture of SiH₄ + NH₃ + N₂ showed the best properties in before and after firing process conditions.The single crystalline silicon solar cells fabricated according to optimized gas mixture condition (SiH₄ + NH₃ + N₂) on large area substrate of size 156 mm × 156 mm (Pseudo square) was found to have the conversion efficiency as high as 17.2%. The reason for the high efficiency using SiH₄ + NH₃ + N₂ is because of the good optical transmittance and passivation properties. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.     

Influence of H2O/DEZ ratio on LPCVD ZnO:B films for application in a-Si:H/μc-Si:H tandem solar cells

In this study, boron doped zinc oxide (ZnO:B) films were prepared at different water to diethyl zinc (H₂O/DEZ) flow ratios from 0.6 to 1.4 by a low pressure chemical vapor deposition (LPCVD) technique. It is found that the morphology of ZnO:B films varies from small leaf-like to pyramidal surface structures with the increasing H₂O/DEZ flow ratio. The rough ZnO:B films deposited at a relatively H₂O/DEZ flow ratio such as 1.2 or 1.4 show a high haze value of up to 28 % at 600 nm and $\mathrm{a} (11\overline{2}0)$ preferential crystallographic orientation. All ZnO:B films were applied in hydrogenated amorphous silicon/microcrystalline silicon tandem solar cells (a-Si:H/μc-Si:H) as front electrodes. The efficiency of the solar cells increases with the increasing H₂O/DEZ flow ratio, which is attributed to a high spectral response mainly in the long-wavelength range and the consequent enhancement of short-circuit current. A high-efficiency a-Si:H/μc-Si:H tandem solar cell of 10 % was achieved. The H₂O/DEZ ratio is an important process parameter to tune the material properties of LPCVD ZnO:B films and the performances of corresponding silicon thin film solar cells.     

用SiCl4/H2气源沉积多晶硅薄膜光照稳定性的研究

对以SiH₄/H₂及SiCl₄/H₂为源气体、采用 等离子体增强化学气相沉积技术制备的非晶硅薄膜和多晶硅薄膜进行了光照稳定性的研究.实验表明，制备的多晶硅薄膜并没有出现 非晶硅中的光致衰减现象，其光电导、暗电导在光照过程中没有下降反而有所上升且电导率 变化快慢受氢稀释度的制约.多晶硅薄膜的光照稳定性可能来源于高的晶化度及Cl元素的存在. 关键词： 多晶硅薄膜 稳恒光电导效应 晶界 光致衰退效应     

Columnar growth of crystalline silicon films on aluminium-coated glass by inductively coupled plasma CVD at room temperature

Silicon films were grown on aluminium-coated glass by inductively coupled plasma CVD at room temperature using a mixture of SiH₄ and H₂ as the source gas. The microstructure of the films was evaluated using Raman spectroscopy, scanning electron microscopy and atomic force microscopy. It was found that the films are composed of columnar grains and their surfaces show a random and uniform distribution of silicon nanocones. Such a microstructure is highly advantageous to the application of the films in solar cells and electron emission devices. Field electron emission measurement of the films demonstrated that the threshold field strength is as low as ～9.8V/μm and the electron emission characteristic is reproducible. In addition, a mechanism is suggested for the columnar growth of crystalline silicon films on aluminium-coated glass at room temperature.     

Chemical control of physical properties in silicon nitride films

Amorphous hydrogenated silicon nitride (a-SiN _x H _y ) films were prepared by plasma-enhanced chemical vapor deposition (PECVD). The physical properties and chemical structures of the resulting materials were systematically investigated. Results reveal that the a-SiN _x H _y films similarly consist of four kinds of Si–N groups, including Si₃N₄, H–Si–N₃, H₂–Si–N₂, and Si₃–Si–N. Deposition at 13.56 MHz and 300 ^°C with flow ratio of SiH₄/NH₃=30/30 sccm leads to the yield of Si_0.39N_0.38H_0.23 films that exhibit excellent properties of high uniformity, high elastic modulus, moderate refractive index and optical band gap, low UV absorption, and ultralow residual stress (?0.17 MPa). Such Si_0.39N_0.38H_0.23 films hold considerable promise for applications in solar cells and infrared sensors. In contrast, an increase of Si or N content in a-SiN _x H _y films will cause the degradation of the properties, so that the films are unsuitable for solar cells. Moreover, a new conception of network degree was proposed to evaluate and explain the properties of a-SiN _x H _y films. Particularly, this work discloses the relationships between the chemical structures and physical properties, and suggests a basic approach to the yield of a-SiN _x H _y films with controlled physical properties.     

Laser applications in thin-film photovoltaics

We review laser applications in thin-film photovoltaics (thin-film Si, CdTe, and Cu(In,Ga)Se₂ solar cells). Lasers are applied in this growing field to manufacture modules, to monitor Si deposition processes, and to characterize opto-electrical properties of thin films. Unlike traditional panels based on crystalline silicon wafers, the individual cells of a thin-film photovoltaic module can be serially interconnected by laser scribing during fabrication. Laser scribing applications are described in detail, while other laser-based fabrication processes, such as laser-induced crystallization and pulsed laser deposition, are briefly reviewed. Lasers are also integrated into various diagnostic tools to analyze the composition of chemical vapors during deposition of Si thin films. Silane (SiH₄), silane radicals (SiH₃, SiH₂, SiH, Si), and Si nanoparticles have all been monitored inside chemical vapor deposition systems. Finally, we review various thin-film characterization methods, in which lasers are implemented.     

Effect of DC bias on microstructural rearrangement of a-SiN:H films on PET substrate

Hydrogenated amorphous silicon nitride (a-SiN:H) films were deposited on flexible polyethylene terephthalate substrates at temperature as low as 100 °C by hot-wire chemical vapor deposition using SiH₄, H₂ and NH₃ precursors. Field emission scanning emission microscopy, Raman spectroscopy, Fourier transform infrared spectroscopy and small angle X-ray scattering were employed to study structural and microstructural properties of a-SiN:H films. The rms surface roughness increased with increase of positive bias to substrate. Intermediate range order, porosity and interface inhomogeneity in amorphous of a-SiN:H films evaluated by acoustic and optical phonon of silicon network, Guinier plot and correlated length from Raman and SAXS characterizations. The fractal behavior of a-SiN:H domains approached the perfect symmetry and the intermediate range order of a-SiN:H films deteriorate with increase of the positive substrate bias. Both correlation length and void size of the a-SiN:H amorphous domain increased with increase of the substrate bias from 0 to +200 V.     

C60富勒烯-巴比妥酸及其二聚体几何结构和电子结构的密度泛函计算研究

采用基于密度泛函理论的广义梯度近似,对C₆₀富勒烯-巴比妥酸及其二聚体的几何结构和电子结构进行了计算研究.发现：C₆₀富勒烯-巴比妥酸只有一种稳定结构,且掺杂巴比妥酸基团对C₆₀分子构型的影响是局域的.C₆₀富勒烯-巴比妥酸的二聚体有三种同素异构体,分别以［6,5］—［6,5］,［6,6］—［6,5］和［6,6］—［6,6］三种方式键合,从能隙大小顺序和总能相对大小来看,［6,6］—［6,6］结构最为稳定.电子结构方面,在C₆₀富勒烯-巴比妥酸单体中,Donor-Acceptor电荷转移体系为C₆₀富勒烯-巴比妥酸,即电荷是从C₆₀向巴比妥酸转移.由前线轨道和自旋布居数得知,C₆₀富勒烯-巴比妥酸单体很好地保留了C₆₀的电磁性质,但稳定性下降,易发生二次加成反应形成二聚体.对于C₆₀富勒烯-巴比妥酸二聚体,Mulliken电荷分析显示,在加成四元环处的碳原子分别得到0104e和0106e电荷,而与它们邻近的碳原子则失去电子,带有正电荷,且距加成位置越近的碳原子失去的电荷越多.在远离加成位置处,碳原子的净电荷变化相对较小.与单体152eV能隙相比,二聚体中的能隙为1.45eV.其前线轨道分布与单体相比,最高占据轨道几乎未变,但最低未占据轨道发生了很大变化. 关键词： 几何结构 电子结构 密度泛函