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A hypothesis is brought forward that the materials with low propagation loss in both optical and microwave band may exhibit good performance in terahertz (THz) band because THz wave band interspaces those two wave bands. For the purpose-of exploring a kind of low-loss material for THz waveguide, Lu2.1Bi0.9Fe5O12(LuBiIG) garnet films are prepared by liquid phase epitaxy (LPE) method on a gadolinium gallium garnet (GGG) substrate from lead-free flux because of the good properties in both optical and microwave bands. In microwave band, the ferromagnetic resonance (FMR) linewidth of the film 2△H = 2.8-5.1Oe; in optical band, the optical absorption coefficient is 600cm^-1 at visible range and about 100-170cm^-1 when the wavelength is longer than 800nm. In THz range, our hypothesis is well confirmed by a THz-TDS measurement which shows that the absorbance of the film for THz wave is 0.05-0.3 cm 1 and the minimum value appears at 2.3 THz. This artificial ferromagnetic material holds a great promise for magnetic field tunable THz devices such as waveguide, modulator or switch.  相似文献   
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Lu2.1Bi0.9Fe5O12 (LuBiIG) garnet films are prepared by liquid phase epitaxy (LPE) method on gadolinium gallium garnet (GGG) substrates from lead-free flux. Three-inch single crystal garnet films with (444) orientation and good surface are successfully fabricated. The lattice mismatch to the GGG(111) substrate is as small as 0.08%. The ferromagnetic resonance (FMR) linewidth of the film is 2AH = 2.8-5.10e, the Faraday rotation is 1.64 deg/μm at 633nm at room temperature and the optical absorption coefficient of the film is 600cm-1 in visible range and about 100-170 cm-1 when the wavelength is larger than 800 nm. The epitaxy film possesses dominating in-plane magnetization with a saturation magnetization of about 1562G. These superior optical, magnetic-optical (MO) and microwave properties of our garnet films have potential applications in both MO and microwave devices.  相似文献   
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