Columnar growth of crystalline silicon films on aluminium-coated glass by inductively coupled plasma CVD at room temperature |
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| Authors: | Wang Jin-Xiao Qin Yan-Li Yan Heng-Qing Gao Ping-Qi Li Jun-Shuai Yin Min and He De-Yan |
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| Affiliation: | Department of Physics, Lanzhou University, Lanzhou
730000, China |
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| Abstract: | Silicon films were grown on aluminium-coated glass by inductively
coupled plasma CVD at room temperature using a mixture of SiH4
and H2 as the source gas. The microstructure of the films was
evaluated using Raman spectroscopy, scanning electron microscopy and
atomic force microscopy. It was found that the films are composed of
columnar grains and their surfaces show a random and uniform
distribution of silicon nanocones. Such a microstructure is highly
advantageous to the application of the films in solar cells and
electron emission devices. Field electron emission measurement of
the films demonstrated that the threshold field strength is as low
as ～9.8V/μm and the electron emission characteristic is
reproducible. In addition, a mechanism is suggested for the columnar
growth of crystalline silicon films on aluminium-coated glass at room
temperature. |
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| Keywords: | surface structure columnar
growth inductively coupled plasma CVD crystalline silicon
films |
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