在空心聚苯乙烯微球表面电沉积Au-Cu双壳层

PS/Au/Cu双壳层核壳复合微球是在自制的电沉积装置中首先在空心聚苯乙烯微球模板上电沉积金形成PS/Au微球,然后再电沉积Cu。首先,PS/Au微球保持了较好的球形度,其中沉积层Au粗糙度低,且厚度达到5.6 μm。由于Au和铜有相同的面心立方晶体结构,所以Cu沿着Au的晶体结构在PS/Au表面沉积。微球断面Au-Cu结合非常紧致,Cu的厚度为8.62 μm,Au的厚度为4.04 μm。PS/Au/Cu微球和Au-Cu双壳层的形貌、厚度,成分和粗糙度是通过3D体式显微镜,SEM、EDS和XRD表征,其结果显示PS/Au/Cu微球及双壳层Au-Cu均匀细致,粗糙度低。     

在空心聚苯乙烯微球表面电沉积Au-Cu双壳层

PS/Au/Cu双壳层核壳复合微球是在自制的电沉积装置中首先在空心聚苯乙烯微球模板上电沉积金形成PS/Au微球,然后再电沉积Cu。首先,PS/Au微球保持了较好的球形度,其中沉积层Au粗糙度低,且厚度达到5.6 μm。由于Au和铜有相同的面心立方晶体结构,所以Cu沿着Au的晶体结构在PS/Au表面沉积。微球断面Au-Cu结合非常紧致,Cu的厚度为8.62 μm,Au的厚度为4.04 μm。PS/Au/Cu微球和Au-Cu双壳层的形貌、厚度,成分和粗糙度是通过3D体式显微镜,SEM、EDS和XRD表征,其结果显示PS/Au/Cu微球及双壳层Au-Cu均匀细致,粗糙度低。     

Columnar growth of crystalline silicon films on aluminium-coated glass by inductively coupled plasma CVD at room temperature

Silicon films were grown on aluminium-coated glass by inductively coupled plasma CVD at room temperature using a mixture of SiH₄ and H₂ as the source gas. The microstructure of the films was evaluated using Raman spectroscopy, scanning electron microscopy and atomic force microscopy. It was found that the films are composed of columnar grains and their surfaces show a random and uniform distribution of silicon nanocones. Such a microstructure is highly advantageous to the application of the films in solar cells and electron emission devices. Field electron emission measurement of the films demonstrated that the threshold field strength is as low as ～9.8V/μm and the electron emission characteristic is reproducible. In addition, a mechanism is suggested for the columnar growth of crystalline silicon films on aluminium-coated glass at room temperature.