溅射钆钴合金薄膜的磁性

用射频溅射的方法制备得的钆钴膜具有垂直于膜面的单轴各向异性.电子衍射结果表明薄膜是非晶态的.电子探针分析证明钆和钴的“ 混合” 是均匀的.用极向克尔效应观察了样品的磁畴，并测量了相应的磁滞回线; 发现在一定的工艺条件下, 制备得的样品, 在退磁状态呈现条状畴, 并在一合适的外磁场作用下能转变为磁泡. 关键词：     

钼酸钆晶体畴结构的同步辐射白光形貌实时研究

用同步辐射白光X射线形貌术对畴结构在温度及外加电场变化条件下的演变情况进行了研究.结果表明:在钼酸钆样品中同时存在铁电畴和铁弹畴,但这两类畴在温度高于居里温度时都消失,当施加足够外加电压时可以单畴化.     

X射线荧光分析二元合金薄膜的成份

一、引 言 随着薄膜工艺的发展,用蒸发、溅射以及外延的方法制备各种薄膜材料,如磁性薄膜、超导薄膜和半导体薄膜等的工作有了很大的发展.薄膜的成份对其物理特性有直接的影响,所以为了研究薄膜的物理特性,就需要定量地分析它们的成份.本文介绍用X射线荧光分析二元钆钴合金薄膜成份的一种方法.这种方法原则上对任何二元薄膜都适用. 用通常的化学分析方法确定钆钴膜的成份有两个缺点,一是样品的量少,化学分析结果的误差较大;二是破坏了样品.而X射线荧光分析法不仅快速、准确,而且不破坏样品. 用X射线荧光分析成份与用电子探针或离子探针定…     

准相位匹配周期极化钼酸钆制备及倍频效应

根据准相位匹配原理，对钼酸钆晶体用于准相位匹配倍频过程的周期性畴结构进行了设计，当入射基频光为l.064pm时，所需的钼酸钆晶体畴结构周期为5．54μm。利用外电场极化，当外电场为2．5kV／mm时，钼酸钆晶体的畴结构反转时间tc=500～600μs。当外电场脉冲幅值为2．5kV／mm、脉冲延续时间t=0．6～0．8tc时，在钼酸钆晶体中制备得到了周期畴结构。当Nd：YAG纳秒激光器输出准连续功率为7～10mW的l.064μm激光通过具有周期畴结构的样品时，获得了0．532μm的倍频光输出。     

磁泡材料的磁滞迴线和泡阵磁畴的剩磁

本文采用一种用光电倍增管作为检测装置的技术,可以自动绘出透明磁性介质的磁滞迴线,测得了不同磁泡外延膜样品,在不同磁畴形状等条件下的磁迴线;解释了曲线的特点,并从实验上证实,具有泡阵磁畴的磁泡膜是处于一种特殊的剩磁状态。 关键词：     

晶格失配应力对单晶(BiTm)_3(GaFe)_5O_(12)膜磁畴结构的影响

利用液相外延工艺在钆镓石榴石衬底上制得了单晶(BiTm)_3(GaFe)_5O_(12)膜,研究了晶格失配应力对其磁畴结构的影响.研究发现,生长速率越快,膜的晶格常数越大;晶格失配应力可以在一定范围内调整膜的垂直各向异性;随着晶格失配应力由较大张应力逐渐转变为较大压应力,磁畴形状先由磁泡畴转变成迷宫畴,然后转变为过渡态部分弯曲的条状畴,最终转变为整齐排列的条状畴;失配应力同时对畴宽也有影响,膜受到的失配应力越大,畴宽越大.这一实验研究对基于控制晶格失配应力来调控单晶膜的各向异性和磁畴结构有指导意义.     

自旋转向相变中的条纹磁畴研究

用光激发电子显微镜研究了Fe／Ni铁磁膜和Co／Cu／Fe／Ni磁耦合膜中的条纹磁畴．实验发现：在Fe／Ni体系中，条纹磁畴宽度随着铁层厚度趋近于自旋转向相变点呈指数下降；在Co／Cu／Fe／Ni体系中，Fe／M层中的条纹磁畴会沿着钴层磁矩的方向排列，其磁畴宽度会随着Co-Fe／Ni间的层间耦合强度呈指数下降．理论上推导出条纹磁畴随着磁各向异性能和层间耦合强度变化的统一公式，而实验结果与理论符合得非常好。     

PdMn/Co多层膜的磁性和磁光特性研究

用磁控溅射法制备了不同Mn含量的PdMn/Co磁性多层膜，通过x射线衍射对该多层膜系列进行结构分析；测定了不同Mn含量系列样品的磁滞回线、垂直各向异性及磁力显微镜图，分析了饱和磁化强度、磁畴和垂直各向异性变化的原因；通过测定该多层膜体系的克尔谱，简要分析了一定波长下克尔角随Mn含量增加而变化的物理机制. 关键词： 多层膜 磁性 磁光     

条形畴结构的FeCoAlON薄膜磁性的研究

用磁控射频溅射法制备了FeCoAlON薄膜, 研究了Al-O和N元素的添加对FeCo合金薄膜的软磁性的影响. 研究结果表明: 随着Al, O, N元素添加量的增加, 薄膜微结构从多晶转化到纳米晶再转化到非晶态, 薄膜表现为软磁性; 在N的含量较高时, 薄膜呈现条形畴结构, 本文对条形畴结构出现的机理和条件作了详细讨论, 并发现具有条形畴结构的薄膜的磁导率频率特性具有多峰共振的特点. 关键词： 铁钴基合金 薄膜 条形畴     

极紫外与软X射线用非晶碳膜全反射镜的研究

用高真空磁控溅射设备分别在工作气压为0.40Pa和0.67Pa下制备了非晶碳膜全反射镜样品,利用X射线掠入射反射测量了膜层厚度、粗糙度和膜层密度,用原子力显微镜测量了样品的表面粗糙度,用同步辐射测量了不同工作气压下制备的非晶碳膜全反射镜的反射率,并对测量结果进行了分析讨论.测试结果表明:在0.40Pa工作气压下制备的非晶碳膜反射镜的性能优于在0.67Pa工作气压下制备的反射镜的性能,在掠入射角小于4.5°时,非晶碳膜全反射镜在5nm以上波段有比较平坦的高反射率,在波长小于5nm波段,反射率急剧下降.     

Reorientational transition and stripe domains in Co films

We have grown, by sputtering, Co films on (1 1 1) Si substrate, with the aim to find the critical thickness of the reorientational transition of the magnetization from the plane to out of the plane as the hcp axis is oriented perpendicular to the film. Stripe Domains (SD) by Magnetic Force Microscopy, characteristic signature of Perpendicular Magnetic Anisotropy, have been found only in samples grown in some series while samples grown with the same growth parameters do not show stripe domains, indicating an in-plane orientation of the magnetization. These apparently controversial results will be explained in terms of the system fundamental parameters, magnetization, exchange stiffness constant and perpendicular magnetic anisotropy of the sample, which play a crucial role especially in Co films.     

Dependence of the microstructure and magnetic properties of amorphous TbFeCo films on the type and pressure of the gas in sputtering

Amorphous Tb₃₀Fe₆₀Co₁₀ films have been fabricated by magnetron sputtering. The dependences of the microstructure and magnetic properties of these films on the type and pressure of the gas in the sputtering chamber have been studied. The pressure of the Ar, Kr, and Xe gases used in the experiments is varied in the sputtering chamber from 0.01 to 4.00 Pa. It has been established that sputtering in the heavy gas (Kr) conducted within the pressure range covered does not permit fabricating TbFeCo films with the easy magnetization axis perpendicular to the film plane. With Xe used at pressures below 1.0 Pa, one observes in TbFeCo films an increase of the coercivity, with the hysteresis loop approaching rectangular shape. Sputtering and deposition in Ar at a pressure of ??0.67 Pa result in the formation of amorphous Tb₃₀Fe₆₀Co₁₀ films with magnetic characteristics satisfying the requirements imposed upon information carriers intended to be employed in perpendicular recording. It has been demonstrated that, by magnetron sputtering in an Ar atmosphere performed at pressures below 1 Pa, one can produce amorphous Tb₃₀Fe₆₀Co₁₀ films suitable for magneto-optical ultra-high-density information recording.     

Anisotropic behaviour in the magnetic field dependence of the low temperature electrical resistance of calcium-doped lanthanum manganate thin films grown by RF magnetron sputtering

We report about the magnetoresistive properties of calcium-doped lanthanum manganate thin films grown by RF magnetron sputtering on single crystalline LaAlO₃ and MgO substrates. Two orientations of the magnetic field with respect to the electrical current have been studied: (i) magnetic field in the plane of the film and parallel to the electrical current, and (ii) magnetic field perpendicular to the plane of the film. The film grown on LaAlO₃ is characterised by an unusual magnetoresistive behaviour when the magnetic field is applied perpendicular to the film plane: the appearance of two bumps in the field dependence of the resistance is shown to be related to the occurrence of anisotropic magnetoresistive effects in manganate films.     

Ti(Cr)缓冲层对用于垂直磁记录材料CoCrTa介质磁特性和微结构的影响

利用直流对靶磁控溅射技术在单晶Si衬底上制备了C/CoCrTa/X (X=Cr，Ti)介质材料.分别采用振动样品磁强计、X射线衍射仪、扫描探针显微镜对样品的磁性、微结构等进行了测试分析.研究发现，Ti缓冲层有利于样品中Co晶粒的易轴垂直于膜面生长.以Ti为缓冲层的样品，颗粒尺寸和表面粗糙度较小，而且磁畴明显，说明以Ti为缓冲层的薄膜样品更适宜做垂直磁记录. 关键词： CoCrTa 垂直磁记录 缓冲层 微结构     

Influence of the film thickness and additional elements (Al,O, and N) on the properties of FeCo film structures

The magnetic properties and domain structure of FeCoAlON thin films with thicknesses varying from 55 to 550 nm have been studied, and conditions favoring preparation of FeCoAlON films with uniaxial anisotropy in the direction normal to the film plane, which is required for designing “perpendicular” super-high-density information recording, have been established. In FeCoAlON films with a thickness up to 300 nm, the domain structure consists of cross-linked domain walls, because strong demagnetizing field suppresses formation of stripe domains. After the film thickness has reached 320 nm, cross-linked domain walls transform into stripe domains, with uniaxial anisotropy in the film plane disappearing, to become replaced by uniaxial anisotropy in the direction normal to the film plane, which can be assigned to magnetoelastic stresses induced by nitrogen atoms filling up interstitial space in the (110) plane. A further increase in the film thickness (up to 550 nm) leads to a rotational anisotropy due to the increase of nitrogen concentration in interstitials and the increase of magnetoelastic stresses.     

Properties of barium hexa-ferrite thin films dependent on sputtering pressure

M-type barium ferrite thin films were deposited onto sapphire (0 0 l) substrates by radio frequency magnetron sputtering. An ultra-thin layer about 20 nm was deposited and annealed before continuous deposition of the films up to 500 nm under different sputtering pressures: 0.2, 0.5, 0.8 and 1.0 Pa, respectively. It was found that the atomic ratios of Fe to Ba increased from 9.3 to 15.0 with the increase of the pressure. The films sputtered at all pressures have c-axis normal to the film plane by a four circle X-ray diffractometer, which is an improvement of the films directly sputtered on the substrate. Needle-like grains were formed on the surface of the films under higher sputter pressure with bubble domains, which is originated from high magnetocrystalline anisotropy of the film. Magnetic hysteresis loops recorded by vibrating sample magnetometer agree with them, where in-plane and out-of-plane loops of the samples prepared under high sputtering pressures are quite different, while they are almost identical of the samples under low pressures. The influence of the sputtering pressure was understood by that with the increase of the pressure, resputtering of the films was increased. Nucleation with c-axis normal to the film plane was deteriorated. Thus samples prepared under high pressure have more needle-like crystallites which have c-axis parallel to the film plane.     

Micromagnetic investigation of sub-1 0 0-nm magnetic domains in atomically stacked Fe(0 0 1)/Au(0 0 1) multilayers

Continuous films and nanostructures of atomically stacked epitaxial Fe(0 0 1)/Au(0 0 1) multilayers have been studied by soft X-ray and Lorentz microscopy as well as micromagnetic simulations. Domain imaging shows about 65 nm wide magnetic stripe domains, in which the magnetization is oriented perpendicular to the film plane. These results are confirmed by micromagnetic simulations, which also yield additional information about the internal structure of domains and walls.     

Ferromagnetic resonance and magnetization in permalloy films with nanostructured antidot arrays of variable size

We present the results of structural and magnetic characterization of Permalloy (Fe₂₀Ni₈₀) films deposited by sputtering on self-organized nanoporous alumina previously treated with phosphoric acid to vary the pore diameters. SEM and AFM images of the top film surfaces show a triangular array of pores with diameters similar to the untreated porous alumina. However, the underlying pore enlargement is evidenced by the magnetic study. Indeed magnetization measurements reveal a decrease in the easy-plane anisotropy energy with elapsing time of chemical etching. Consistent with these results, ferromagnetic resonance measurements perpendicular to the film indicate a systematic reduction of the resonance field which can be directly related to an increase in the pore diameter. The effect of lateral confinement (due to the pores) in the spin-wave resonance is evidenced in multiple absorption lines when the applied field is in the film plane and perpendicular to it. This contrasts with the results for the continuous test film.     

Magnetic force microscopy studies of domain walls in nickel and cobalt films

A magnetic force microscopy is used to examine the domain walls in nickel and cobalt films deposited by argon ion sputtering. Thin nickel films deposited at high substrate temperatures exhibit coexistent Bloch and Neel walls. Films grown at room temperature display alternative Bloch lines with cap switches. These films agglomerate to form grains after annealed at high temperatures. The film composed of larger grains behaves better nucleation implying magnetic domains of closure, while the film composed of smaller grains exhibits more defects implying alternative Bloch lines. We have also observed domain displacements and cap switches, which occur due to precipitation of particles in small grain size films. Stripe domains are observed for film thicknesses larger than 100 nm. They become zigzag cells when an external field of 1.5 T is applied perpendicular to the surface of the films. This experiment indicates that the domain sizes in thin films and the strip widths for thick films both depend on the square-root of the film thickness, which varies from 5 to 45 nm and from 100 to 450 nm, respectively.     

Stripe domain statics in garnet films

Magnetic garnet films grown epitaxially on nonmagnetic garnet substrates exhibit a growth or stress-induced uniaxial anisotropy in addition to the cubic magnetocrystalline anisotropy associated with their crystal symmetry. When the uniaxial anisotropy is dominant over the cubic, such films exhibit stripe or bubble domain structures; even a small cubic anisotropy component can have a decisive effect on the behavior of the domains in applied fields. We report an experimental study of the quadistatic behavior of domains in fields applied to a (111) film in the film plane along (11$\text{2}$) and ($\text{1}$10). The experimental results are interpreted by a new theory that gives good agreement with the observed behavior, and yields an accurate measurement of the cubic and uniaxial anisotropy constants.The main qualitative features of the results are: In a ($\text{1}$10) field, the walls are Neél walls perpendicular to the field. In a (11$\text{2}$) field the walls are Bloch walls parallel to the field, the domain magnetization in adjacent stripes is not symmetrical about the film plane, and adjacent stripes are not of equal width; the domain period first shrinks and then expands with increasing field; and even though the applied field has no component perpendicular to the film plane, the film develops a net perpendicular magnetic moment.