共格外延的La_(0.7)Sr_(0.3)MnO_3薄膜的应变弛豫

厚度为7～100nm La0.7Sr0.3MnO3(LSMO)薄膜是由脉冲激光法生长在(001)(LaAlO3)0.3(Sr2AlTaO6)0.7(LSAT)衬底上.薄膜的结构演变是由高分辨X-射线ω-摇摆曲线及倒易空间(103)反射来表征.我们的结果表明所有的LSMO薄膜是共格生长在LSAT(001)上.对厚度大于(或等于)22nm的LSMO薄膜既显示可调制的单斜(MA)结构,也包含切应变弛豫诱导的有序畴结构和平面内超格子.薄膜的厚度依赖的结构畴宽,以及切应变对薄膜居里温度Tc的影响被仔细研究.作为对比,晶格失配对LSMO薄膜中周期畴形成的影响也被讨论.     

新型金属间化合物Sm(TiFe)_(12)的结构与磁性

SmTiFe_x(x的数值为8—11)可形成稳定的金属间化合物,经测定,晶体结构属于ThMn_(12)型四方结构,空间群为14/mmm,本文着重分析了Sm(TiFe)_(12)和Gd(TiFe)_12的结构和磁性。Sm(TiFe)_(12)具有很强的单轴磁晶各向异性,易磁化方向为c轴,居里温度610K。通过对Gd(TiFe)_(12)磁性的研究,进一步分析了在Sm(TiFe)_(12)中Sm和Fe次晶格的各向异性,实验结果表明,Sm和Fe次晶格都具有单轴磁晶各向异性,易磁化方向皆沿c轴。这是继Nd_2Fe_(14)B型永磁体以后发现的又一种具有单轴磁晶各向异性的三元稀土-铁金属间化合物。     

液相外延(BiTm)_3(FeGa)_5O_(12)石榴石单晶薄膜的X射线双晶衍射仪研究

本文用X射线双晶衍射仪和光学偏光显微镜对不同液相外延温度生长的(BiTm)(FeGa)_5O_(12)石榴石单晶薄膜进行了研究。发现随着生长温度的下降,薄膜的点阵常数增加,比法拉第旋转角θ_F增大。同时发现液相外延单晶石榴石薄膜是由点阵常数或取向略有差别的两层组成。当薄膜的晶格失配大于10~(-3)时薄膜将破裂。     

W(110)基底上的铁纳米岛初始自发磁化态的微磁学模拟

用微磁学模拟研究W(110)基底上铁纳米岛的初始自发磁化态的磁畴结构,确定了不规则形状、椭圆形和矩形岛中不同磁畴态之间的各向异性常数的临界点,得到了纳米岛的磁化态作为各向异性常数和厚度函数的完整相图,相图中存在一较宽的过渡区,把双畴态与涡旋态和菱形态分开,过渡区两侧的边界是不确定的.计算结果表明,初始自发磁化态的磁畴结构主要由各向异性及岛的厚度决定,而且岛的边沿形状对涡旋态和菱形态的磁畴结构有重要影响.准确的铁纳米岛的各向异性常数仍有待于进一步确定. 关键词： 初始自发磁化磁畴结构 铁纳米岛 微磁学模拟 各向异性     

具有条纹磁畴结构的NiFe薄膜的制备与磁各向异性研究

具有条纹磁畴结构的磁性薄膜表现出面内转动磁各向异性,对于解决高频电子器件的方向性问题起着至关重要的作用.本文采用射频磁控溅射的方法,研究了NiFe薄膜的厚度、溅射功率密度、溅射气压等制备工艺参数对条纹磁畴结构、面内静态磁各向异性、面内转动磁各向异性、垂直磁各向异性的影响规律.研究发现,在功率密度15.6 W/cm~2与溅射气压2 mTorr(1 Torr=1.33322×102Pa)下生长的NiFe薄膜,表现出条纹磁畴的临界厚度在250 nm到300 nm之间.厚度为300 nm的薄膜比250 nm薄膜的垂直磁各向异性场增大近一倍,从而磁矩偏离膜面形成条纹磁畴结构,并表现出面内转动磁各向异性.高溅射功率密度可以降低薄膜出现条纹磁畴的临界厚度.在相同功率密度15.6 W/cm~2下生长300 nm的NiFe薄膜,随着溅射气压由2 mTorr增大到9 mTorr,NiFe薄膜的垂直磁各向异性场逐渐由1247.8 Oe(1 Oe=79.5775 A/m)增大到3248.0 Oe,面内转动磁各向异性场由72.5 Oe增大到141.9 Oe,条纹磁畴周期从0.53μm单调减小到0.24μm.NiFe薄膜的断面结构表明柱状晶的形成是表现出条纹磁畴结构的本质原因,高功率密度下低溅射气压有利于柱状晶结构的形成,表现出规整的条纹磁畴结构,高溅射气压会导致柱状晶纤细化,面内转动磁各向异性与面外垂直磁各向异性增强,条纹磁畴结构变得混乱.     

Tb0.3Dy0.7Fe2单晶中巨磁致伸缩的逆效应

研究了Terfenol-D材料中巨磁致伸缩的逆效应,即磁机械效应.基于Stoner-Wohlfarth(SW)模型,考虑磁晶各向异性和应力各向异性能,依据自由能极小原理,获得了退磁态下Terfenol-D单晶中磁化强度方向和压应力的关系.采用数值方法求解了平衡条件下的非线性方程组.理论结果表明,Terfenol-D巨磁致伸缩单晶中的磁各向异性取决于磁晶各向异性和应力各向异性之间的竞争.在压应力的作用下,Terfenol-D单晶中的磁各向异性由立方向单轴转变.理论和实验结果的比较表明,存在一个临界压应力,使磁致伸缩效应达到极大值.该理论结果还解释了压应力使得Terfenol-D单晶材料难于磁化和磁致伸缩效应出现极大值的实验事实.理论计算不仅为研究这类问题提供了一个更准确的方法,而且其结果也有助于理解类似材料中的磁化过程.     

Tb0.3Dy0.7Fe2单晶中巨磁致伸缩的逆效应

研究了Terfenol-D材料中巨磁致伸缩的逆效应,即磁机械效应.基于Stoner-Wohlfarth(SW)模型,考虑磁晶各向异性和应力各向异性能,依据自由能极小原理,获得了退磁态下Terfenol-D单晶中磁化强度方向和压应力的关系.采用数值方法求解了平衡条件下的非线性方程组.理论结果表明,Terfenol-D巨磁致伸缩单晶中的磁各向异性取决于磁晶各向异性和应力各向异性之间的竞争.在压应力的作用下,Terfenol-D单晶中的磁各向异性由立方向单轴转变.理论和实验结果的比较表明,存在一个临界压应力,使磁致伸缩效应达到极大值.该理论结果还解释了压应力使得Terfenol-D单晶材料难于磁化和磁致伸缩效应出现极大值的实验事实.理论计算不仅为研究这类问题提供了一个更准确的方法,而且其结果也有助于理解类似材料中的磁化过程. 关键词： Terfenol-D 磁机械效应 巨磁致伸缩效应 磁各向异性     

压应力对Fe0.81 Ga0.19单晶磁化和磁致伸缩的影响

研究了Fe_0.81Ga_0.19合金单晶沿[100]方向的磁机械效应和磁致伸缩效应.基于Stoner-Wohlfarth模型,通过数值计算获得了在压应力和外磁场联合作用下磁化强度的方向余弦.研究表明,随着压应力的增加,退磁态下合金中的磁各向异性会由三轴各向异性向双轴各向异性转变.这使得合金中 90° 畴的体积分数增加,导致磁致伸缩效应增大. 关键词： FeGa合金 磁机械效应 巨磁致伸缩效应     

应力对(GaP)_1/(InP)_1(111)超晶格体内和表面电子结构的影响

考虑到应力对超薄层(GaP)_1/(InP)_1(111)结构中Ga-P和In-P键长的作用为均匀分布的情况,本文提出在紧束缚近似下,将应力的影响直接反映到Harrison的交迭积分项中,并利用Recursion方法全面计算了由Keating模型确定的稳定(GaP)_1/(InP)_1(111)超晶格体内和表面的电子结构,结果表明,这种材料的带隙为1.88eV,它比体材料GaP(2.91eV)和InP(1.48eV)的平均值小0.31eV.通过对辅助模型的研究,可以发现随键长应力的增大,系统带隙加宽,费密能级移动,同时计算得到的各晶位上原子的电子占有数结果清楚地反映了InP的离化程度比GaP高,最后证明这类应力超晶格(111)表面有类似的SP_z+P_x—P_y退杂化轨道存在,但是各分波轨道对它的贡献与(GaAs)_1/(AIAs)_1(001)超晶格中(001)表面的相应情况是不同的。     

La_(2/3/)Sr_(1/3)MnO_3单晶的低场磁热效应

本文对La2/3Sr1/3MnO3单晶中b和a(c)轴方向的磁热效应进行了研究,由于晶体的磁晶各向异性,磁热效应表现出一定的各向异性.通过不同温度下的等温起始磁化曲线的实验分析表明,在外加场为10kOe的情况下,b和a(c)轴方向的磁熵变-ΔSM(H)在370K达到最大值,分别为1.942Jkg-1K-1和1.873Jkg-1K-1.低场下较大的磁熵变是由于磁化强度随外场迅速变化以及自旋-晶格的耦合造成的.La2/3Sr1/3MnO3单晶在低场下表现出相对较大的磁热效应,表明其在磁制冷方面有一定的潜在应用价值.     

L1_0-FePt合金单层磁性薄膜的微磁学模拟

具有四方结构的L10-FePt合金因其具有高磁晶各向异性和良好的化学稳定性而成为超高密度薄膜磁记录介质的最佳选择.对实验制备得到的磁性能良好的垂直取向L10-FePt合金单层膜进行了微磁学分析.在传统微磁学模型的基础上,根据晶体的对称性,引入了四角磁晶各向异性能密度的唯象表达形式;又依据薄膜生长过程中晶格对称性的破坏,考虑了薄膜面内的应力,并引入了磁弹性能.以四角磁晶各向异性能和磁弹性能为重点,对L10-FePt合金单层膜的磁滞回线进行了详细的分析,并且用微磁学方法确定了薄膜面内应力的大小.     

垂直各向异性Ho3Fe5O12薄膜的外延生长与其异质结构的自旋输运

垂直磁各向异性稀土-铁-石榴石纳米薄膜在自旋电子学中具有重要应用前景.本文使用溅射方法在(111)取向掺杂钇钪的钆镓石榴石(Gd_0.63Y_2.37Sc₂Ga₃O₁₂,GYSGG)单晶衬底上外延生长了2—100 nm厚的钬铁石榴石(Ho₃Fe₅O₁₂,HoIG)薄膜,并进一步在HoIG上沉积了3 nm Pt薄膜.测量了室温下HoIG的磁各向异性和HoIG/Pt异质结构的自旋相关输运性质.结果显示,厚度薄至2 nm的HoIG薄膜(小于2个单胞层)在室温仍具有铁磁性,且由于外延应变,2—60 nm厚HoIG薄膜都具有很强的垂直磁各向异性,有效垂直各向异性场最大达350 mT;异质结构样品表现出非常可观的反常霍尔效应和“自旋霍尔/各向异性”磁电阻效应,前者在HoIG厚度小于4 nm时开始缓慢下降,而后者当HoIG厚度小于7 nm时急剧减小,说明相较于反常霍尔效应,磁电阻效应对HoIG的体磁性相对更加敏感;此外,自旋相关热电压随HoIG厚度减薄在整个厚度范围以指数方式下降,说明遵从热激化磁振子运动规律的自旋塞贝克效应是其主要贡献者.本文结果表明HoIG纳米薄膜具有可调控的垂直磁各向异性,厚度大于4 nm的HoIG/Pt异质结构具有高效的自旋界面交换作用,是自旋电子学应用发展的一个重要候选材料.     

Magnetic characteristics of R2(Fe, Co)14B systems (R = Y, Nd and Gd)

R₂(Fe, Co)₁₄B compounds (R = Y, Nd and Gd) were prepared in high purity. The magnetic behavior of R₂(Fe, Co)₁₄B compounds is reported over the temperature range 4 to 300 K. The effects of Fe substitution by Co on the saturation magnetization, Curie temperature and anisotropy are presented. The spin-reorientation temperature is lowered as Co replaces Fe. This also results in a reduced cone angle.

The R₂Fe_14−xCo_xB alloys crystallize in the tetragonal structure over the entire concentration range of 0 x 14. When Fe is substituted by Co, the Curie temperature increases significantly, the saturation magnetization increases to a maximum value around x = 2, and the anisotropy becomes planar for R = Y and Gd. The Nd₂(Fe, Co)₁₄B systems all exhibit uniaxial anisotropy at room temperature and Nd₂Co₁₄B is strongly uniaxial at 77 K. The Nd₂(Fe, Co)₁₄B systems are conical at 77 K.     

液相外延(BiTm)3(FeGa)5O12石榴石单晶薄膜的X射线双晶衍射仪研究

本文用X射线双晶衍射仪和光学偏光显微镜对不同液相外延温度生长的(BiTm)₃(FeGa)₅O₁₂石榴石单晶薄膜进行了研究。发现随着生长温度的下降,薄膜的点阵常数增加,比法拉第旋转角θ_F增大。同时发现液相外延单晶石榴石薄膜是由点阵常数或取向略有差别的两层组成。当薄膜的晶格失配大于10^-3时薄膜将破裂。 关键词：     

垂直磁各向异性L10-Mn1.67Ga超薄膜分子束外延生长与磁性研究

具有超强垂直磁各向异性的L1₀-Mn_xGa薄膜由于其与半导体材料结构及工艺的高度兼容性而受到广泛关注, 其超高垂直磁各向异性能和极低的磁阻尼因子预示着L1₀-Mn_xGa薄膜在高热稳定性自旋电子学器件中将发挥重要作用. 而L1₀-Mn_xGa超薄膜对于降低L1₀-Mn_xGa基垂直磁各向异性隧道结中的磁矩翻转临界电流密度有着重要的意义. 本文采用分子束外延的方法, 在半导体GaAs衬底上成功制备出了一系列不同厚度的L1₀-Mn_1.67Ga薄膜, 厚度范围为1-5 nm. 生长过程中反射式高能电子衍射原位检测以及X射线衍射结果均表明了其良好的单晶相. 磁性测量结果表明, 厚度在1 nm以上的L1₀-Mn_1.67Ga薄膜均可以保持垂直磁各向异性特征, 厚度为5 nm的L1₀-Mn_1.67Ga薄膜的垂直磁各向异性能可达到14.7 Merg/cm³. 这些结果为基于L1₀-Mn_1.67Ga的垂直磁各向异性隧道结在自旋转移扭矩驱动的磁随机存储器等低功耗器件的集成及应用提供了重要的实验支持.     

Vortex penetration depth of κ-(ET)2Cu[N(CN)2]Br

The magnetic field dependence of the in-plane penetration depth λ_|(H) for single crystal κ-(ET)₂Cu[N(CN)₂]Br has been measured at 3, 9.6, and 36 MHz. Over a limited range, λ_| scales with a characteristic field H^*(T) that coincides with a shoulder in the λ_| vs. H curves. Above that field, λ_| increases sharply toward a second inflection point at H^**(T) that coincides with is close to the irreversibility line measured by magnetization. For fields larger than H^** the penetration depth diverges, suggesting that the vortex lattice has melted. The field dependence at one frequency agrees qualitatively with a model of pinned vortices at low fields giving way to flux flow at higher fields. However, the observed frequency dependence deviates significantly from the predictions of this model, suggesting that collective effects play a major role. Our technique also yields a new measurement for the interplane penetration depth λ 300 μm, implying an anisotropy λ/λ_| > 200.     

Magnetic susceptibility of (IPA)2FeCl4, (IBuA)2FeCl4 and (IPA)2CuCi4 (IPA = isopropylammonium ion and IBuA = isobutylammonium ion)

The magnetic susceptibility of (IPA)₂FeCl₄, (IBuA)₂FeCl₄ and (IPA)₂CuCl₄, where IPA = (CH₃)₂CHNH⁺₃ and IBuA = (CH₃)₂CHCH₂NH⁺₃, were measured in the temperature range form 80 K up to a temperature near the melting points of the samples. The results obtained were interpreted in termw of a canted two-dimensional antiferromagnet. The variation of the magnetic susceptibility with the change in the composition was also discussed.     

Synthesis and superconductivity of (Pb0.5Cd0.5)(Sr0.9R0.1)2(R′0.7Ce0.3)2Cu2Oy

New Pb based layered superconducting cuprates (Pb_0.5Cd_0.5)(Sr_0.9R_0.1)₂(R′_0.7Ce_0.3)₂Cu₂O_y with (R,R′) = (Eu,Gd), (Eu,Dy) and (Nd,Gd), have been successfully synthesized. The structure of (Pb,Cd)(Sr,Eu)₂(Gd,Ce)₂Cu₂O_y is determined using XRD data. The X-ray powder diffraction pattern can be indexed by the tetragonal structure with lattice parameters a = 3.8250 Å, C = 29.2235 Å and a space group of I4/mmm. The effects of synthesis conditions on (Pb,Cd)(Sr,Eu)₂(Gd,Ce)₂Cu₂O_y are studied and a T_c(onset) of 26 K is obtained by resistance measurements. It is isostructural to the superconductor (Pb,Cu)(Sr,Eu)₂(Eu,Ce)₂Cu₂O_y.     

Magnetic properties of Sm3(Fe, Mo)29NX interstitial nitride

Sm₃(Fe, Mo)₂₉N_x nitride has been synthesized at 823 K for 2.5 h by gas phase reaction under 1 atm of nitrogen. The nitride retains the structure of parent compound. The unit cell volume of the nitride is 4.7% greater than that of the parent compound. Introduction of nitrogen leads to an increase of Curie temperature T_c from 445 K for the parent to 704 K for the nitride, and an increase of saturation magnetization M_s from 135 A m²/kg for the parent to 152 A m²/kg for the nitride at 4.2 K, and from 107 A m²/kg for the parent to 137 A m²/kg for the nitride at 300 K. The nitride exhibits uniaxial anisotropy with an anisotropy field B_a of 20.5 T at 4.2 K and 14.6 T at 300 K.     

Lattice sternheimer factor of Eu(OH)3 from Mössbauer spectral study

The Mössbauer spectra of powdered Eu(OH)₃ were recorded between 300 and 4.2 K, with ¹⁵¹SmF₃ as source. The spectra showed one single absorption line having definite width but without any fine structure. The lattice Sternheimer factor γ_∞ of ¹⁵¹Eu in Eu(OH)₃ was estimated with the help of these spectra as well as by using the values of some physical parameters obtained from spectral and magnetic susceptibility measurements on pure single crystal of Eu(OH)₃, The value of lattice Sternheimer factor (= -87) thus evaluated is slightly larger than that value ( = - 80) for ¹⁵⁴Eu in ethylsulphate host. This result is consistent with the γ_∞ values of other rare-earth ions and also with the results obtained from magnetic and optical experiments on Eu(OH)₃.