面内磁场对硬磁泡形成的影响

实验研究了面内磁场对一次脉冲偏磁场作用下外延石榴石薄膜中硬磁泡形成的影响,发现存在一个使硬磁泡不再形成的临界面内磁场H_in⁰,它与材料参量有关,通过实验,运用面内磁场对条状畴的作用和枝状畴的形成,定性解释了软硬磁泡形成的分界场H_[b]随面内磁场增大、快降以及缓降这三个物理过程。 关键词：     

系列脉冲偏磁场作用下硬磁泡的形成

实验研究了系列脉冲偏场作用下外延石榴石薄膜的硬磁泡(包括哑铃畴)的形成规律。发现系列脉冲对畴段的作用不是单次脉冲作用(软畴段硬化的物理过程)的简单迭加,而有其特有的规律性,存在着硬畴段进一步硬化及硬畴段软化的另两个物理过程。运用上述三个物理过程对实验结果作了解释。 关键词：     

面内场和静态偏磁场作用下条畴和泡畴的稳定性

实验研究面内场H_in和静态偏磁场H_b作用下,(111)面磁泡膜内条畴的消失过程。保持H_b恒定,增加H_in,测量条畴消失场H_s^*和泡畴消失场H_k^*与面内场方向β的变化关系。计及立方磁晶各向异性的影响,建立H_in和H_b共同存在时的条畴稳定性理论。定性解释了实验的主要特点。导出黑、白条畴同时消失时的角度 β_n=1/3(2nπ±arc cos│3/(2^1/2)(M_sH_b)/K₁│)(n=0,±1,±2,…)与实验基本符合。 关键词：     

温度对普通硬磁泡的影响

实验研究了温度对外延石榴石磁泡薄膜中硬磁泡及其相应硬条畴的影响。发现了一个与材料参量有关的临界温度T₀当试验温度T0时,硬条畴畴壁中的VBL链在升降温后不变;而当T>T₀时,VBL链消失,所有硬磁泡都软化为正常磁泡。当畴壁中的VBL处于压缩态时,较硬的硬磁泡在较低的温度下软化。软化时,VBL消失的方式是整个VBL链的解体。 关键词：     

ANNIHILATION OF VERTICAL-BLOCH-LINE CHAINS IN THE WALLS OF ORDINARY HARD BUBBLES SUBJECTED TO JOINT STATIC BIAS FIELD AND IN-PLANE FIELD

For the ordinary hard bubbles(OHBs) of garnet bubble films, the annihilation of the vertical-Bloch line (VBL) chains in their walls subjected to joint static bias field H_b and in plane field H_ip was experimentally studied. The curves of two critical in-plane fields, H⁽¹⁾_ip and H′_ip, vs H_b were measured. By means of the so-called "head-cut" and "tail-cut" experiments designed in this work, it was verified that for the OHBs subjected to H_ip, their VBL chains with different lengths lose VBLs and become shorter simultaneously. It was also verified that the critical in-plane fields H⁽¹⁾_ipand H′_ip correspond to the break down of the shortest and longest VBL chains of OHBs, respectively.     

STABILITY OF SECOND KIND OF DUMBBELL DOMAINS SUBJECTED TO AN IN-PLANE FIELD AT DIFFERENT BIAS FIELDS

The softening process of the second kind of dumbbell domalns(liDs) in garnet bubble films subjected to an in-plane field H_ip at different static bias field H_b was studied experimentally. It was found that when H_b is larger, the remaining percentage of IID, R_IID, drops sharply at a certain H_ip, and with the increase of H_b the drop occurs at lower H_ip and becomes more intensive. We have confirmed that this is related to the "spontaneous-shrink" 0f IIDs, which plays an important role for the breakdown oF vertical Bloeh line chains of lids subjected to joint fields H_ip and H_b .     

欧姆接触中接触电阻率的计算

从欧姆接触电阻率的定义出发,先从理论上介绍了热离子发射、热离子场发射和场发射三种不同情况下欧姆接触电阻率的计算公式,然后详细地从实验上综合各种测试方法,并讨论了其利弊．     

INFLUENCE OF IN-PLANE FIELD ON THE STABILITY OF VERTICAL BLOCH LINE CHAINS IN HARD DOMAINS OF GARNET BUBBLE FILMS

The stability of vertical Bloch line (VBL) chains was statistically studied for all three types of bard domains in garnet bubble films subjected to an in-plane field H_ip. With a set of integrate data taken from seven bubble samples and with two typical figures of a sample, four main features of the behavior of VBL chains subjected to H_ip were summarized.     

立方磁晶各向异性对面内磁场中条畴和磁泡稳定性的影响

在八个(111)面磁泡膜上,观察了施加面内(in-plane)磁场后在不同晶轴方向上条状畴的消失过程,测量了条畴消失场H_s^*和磁畴消失场H_k^*与面内磁场的方向的关系。本文计及立方磁晶各向异性,完善了面内磁场中条畴的稳定性理论。用该理论定性地解释了实验结果的主要特点。导出了H_s^*与立方各向异性及面内场方向的两种近似的理论关系,它们分别适用于面内场方向靠近和不十分靠近〈110〉晶轴的情形。它们和实验结果是大致符合的。在〈110〉晶轴上,理论关系具有下列简单的形式:H_k^*<110>=H_s^*<110>=H_k{1+(k₁/2K_u)-[al/h(4πM_s/H_k)²]^2/3},此式与实验结果符合得相当好。 关键词：