Pt974Mn26/Co多层膜的磁性与磁光性质研究

用磁控溅射法制备了Mn含量一定、不同PtMn层厚度的Pt974Mn26/Co磁性多层膜系列，通过x射线衍射对该多层膜系列进行结构分析；测定了不同PtMn层厚度系列样品的磁滞回线、有效垂直各向异性，分析了饱和磁化强度和有效垂直各向异性变化的原因；通过测定该多层膜体系的克尔谱，分析了一定波长下克尔角随PtMn层厚度变化的规律.认为克尔角的变化是由于界面的合金化以及原子的极化减小所致. 关键词： 多层膜 磁性 磁光     

Pt97.4Mn2.6/Co多层膜的磁性与磁光性质研究

用磁控溅射法制备了Mn含量一定、不同PtMn层厚度的Pt97.4Mn2.6/Co磁性多层膜系列,通过x射线衍射对该多层膜系列进行结构分析;测定了不同PtMn层厚度系列样品的磁滞回线、有效垂直各向异性,分析了饱和磁化强度和有效垂直各向异性变化的原因;通过测定该多层膜体系的克尔谱,分析了一定波长下克尔角随PtMn层厚度变化的规律.认为克尔角的变化是由于界面的合金化以及原子的极化减小所致.     

PtMn/Co多层薄膜结构及磁光克尔效应的研究

用磁控溅射法制备了不同Mn含量的PtMn/Co多层膜,通过大,小角X射线衍射谱对该多层膜进行结构分析,研究了该多层膜的层状结构同磁光克尔效应的关系,通过测定该多层膜在不同杂质浓度下的克尔谱,椭偏率谱及克尔回线,发现克尔角随Mn含量增加的变化规律,并分析了它的产生机制。     

MnBi磁性多层膜磁光科尔效应的数值模拟

基于各向异性的平面电磁波传输理论和4×4矩阵法，计算了MnBi，Mn_0.53Bi_0.47，Mn_0.52Bi_0.44Sb_0.04磁性多层膜系列的磁光科尔旋转角、椭圆率随波长、入射角、磁性层厚度变化曲线.计算结果表明，模拟的科尔旋转角、椭圆率随波长变化规律与实验结果吻合很好；在一定波长的垂直入射下，模拟的科尔旋转角、椭圆率随磁性层厚度变化曲线出现科尔谱极大；在磁性层厚度一定的情况下，当入射光以某一角度 关键词： 4×4矩阵法 磁性多层膜 磁光科尔谱 介电张量     

非晶TbCo/Si多层膜的磁性和磁光特性

利用射频磁控溅射方法制备了非晶TbCo/Si多层膜,并对多层膜的磁性和磁光特性进行了测量.实验发现,随着Si层厚度的增加,非晶TbCo/Si多层膜的饱和磁化强度M_s、垂直各向异性常数K_u、磁光克尔角θ_K都显著下降.分析认为这是由于在TbCo层与Si层之间的层间互扩散形成了非磁性的Co₂Si所致. 关键词：     

Co/Ni多层膜垂直磁各向异性的研究

采用直流磁控溅射法在玻璃基片上制备了Pt底层的Co/Ni多层膜样品, 对影响样品垂直磁各向异性的各因素进行了调制, 通过样品的反常霍尔效应系统的研究了Co/Ni多层膜的垂直磁各向异性. 结果表明, 多层膜中各层的厚度及周期数对样品的反常霍尔效应和磁性有重要的影响. 通过对多层膜各个参数的调制优化, 最终获得了具有良好的垂直磁各向异性的Co/Ni多层膜最佳样品Pt(2.0)/Co(0.2)/Ni(0.4)/Co(0.2)/Pt(2.0), 经计算, 该样品的各向异性常数K_eff 达到了3.6×10⁵ J/m³, 说明样品具备良好的垂直磁各向异性. 最佳样品磁性层厚度仅为0.8 nm, 样品总厚度在5 nm以内, 可更为深入的研究其与元件的集成性.     

多层膜［Co85Cr15/Pt］20的磁性、垂直磁记录特性和微结构的关系

采用磁控溅射法制备了性能优良的以Pt为缓冲层的［Co85₈₅Cr15_{15/Pt］2020 多层膜，研究了溅射气压对［Co8585Cr1515/Pt］2020多层膜微结构和磁性的 影响.研究结果表明，Ar溅射气压对［Co8585Cr1515/Pt］2020多层膜的微结构 、垂直磁各向异性和矫顽力有重要的影响 关键词： 溅射气压 多层膜 垂直磁各向异性 有效磁各向异性常数}     

CoFeB/Pt多层膜的垂直磁各向异性研究

具有垂直磁各向异性的磁性纳米结构是自旋转移力矩器件的重要研究内容, 本文采用反常霍尔效应系统地研究了磁控溅射法制备的[CoFeB/Pt]_n多层膜的垂直磁各向异性. 当CoFeB的厚度小于0.6 nm时, 可以在[CoFeB/Pt]_n多层膜中观察到清晰的垂直磁各向异性, 其垂直磁各向异性强烈依赖于CoFeB和Pt层厚度及多层膜周期数. 当多层膜周期数n ≥ 5时, 出现零剩磁现象. 另外, [CoFeB/Pt]_n多层膜的矫顽力均小于2 kA·m^-1, 有望作为垂直自由层的重要侯选材料应用于垂直磁纳米结构中.     

引入纳米氧化层的CoFe/Pd双层膜结构中增强的垂直磁各向异性研究

制备了CoFe/Pd双层结构的界面处或CoFe层 内部引入纳米氧化层后的系列薄膜. 研究结果显示, 引入纳米氧化层后, 可以使薄膜的磁各向异性在退火后从面内转到垂直膜面方向. 并且对于在CoFe层内部引入纳米氧化层的这类样品, 其强烈的垂直磁性可以在相当宽的有效磁性层厚度范围内(1.2-2 nm)维持. 在保持垂直磁性的前提下, 这种特殊的双层膜结构中CoFe磁性层厚度比常规CoFe/Pd 多层膜中的CoFe层厚度至少多出1.4 nm. 本文的研究有助于制备出具有较高热稳定性的垂直磁性器件电极.     

磁性多层膜CoFeB/Ni的垂直磁各向异性研究

应用磁控溅射法在玻璃基片上制备了以Pt为底层的CoFeB/Ni多层膜结构样品,通过测试样品的反常霍尔效应研究多层膜的垂直磁各向异性(perpendicular magnetic anisotropy,PMA),对影响多层膜垂直磁各向异性的各因素进行了调制.实验结果表明,多层膜的底层厚度、周期层中各层的厚度及周期数对样品的反常霍尔效应和磁性有重要影响.通过对样品各参数的逐步调制,最终获得了具有良好PMA的CoFeB/Ni多层膜最佳样品Pt(4)/[CoFeB(0.4)/Ni(0.3)]_3/Pt(1.0).经测试计算,该样品的各向异性常数K_(eff)为2.2×10~6erg/cm~3(1 erg/cm~3=10~(-1)J/m~3),具有良好的PMA性能,样品总厚度为7.1 nm,完全满足制备垂直磁结构材料的厚度要求,可进一步研究其在器件中的集成与应用.     

Co/Cr/Pd多层膜的磁性和磁光特性的研究

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Compact 1-D magnetophotonic crystals with simultaneous large magnetooptical Kerr rotation and high reflectance

We have investigated the case of reflection-type one-dimensional magnetophotonic crystals (MPCs) in order to achieve high reflectance and high magnetooptical Kerr effect, simultaneously, utilizing a low number of magnetic layers. In a MPC structure including only one Bi:YIG magnetic layer, we have achieved a Kerr rotation as huge as θ_k ≈ 90° with a reflectance of R > 97%. In addition, we have introduced a thinner structure having three Bi:YIG layers and with approximately the same Kerr rotation and reflectance. Both the structures are very compact with lengths of less than 9 μm.     

An analysis of the mechanism of Kerr effect enhancement in Mn/Dy/Bi

A study is reported of the structural, magnetic, and magneto-optic properties of Mn/Dy/Bi films obtained by multilayer technology. The maximum Kerr rotation angle in such films is shown to be θ _k =2.25°. Possible reasons for such a large Kerr effect enhancement are considered, namely, an increase in the 6p–3d transition probability caused by symmetry distortion, polarization of the Bi6p band, and a change in the density of states near the Fermi level. The latter reason has been analyzed by simulating the electronic structure of Mn/Dy/Bi through superposition of Dy levels on the MnBi band structure. This approach has revealed possible additional transitions which may be induced by the presence of a Dy buffer and could contribute to the Kerr magneto-optic effect. Fiz. Tverd. Tela (St. Petersburg) 41, 91–97 (January 1999)     

MnBiAl薄膜的磁光及磁性能研究

用真空电子束蒸发制备了MnBi_xAl_0.15薄膜.当0.4≤x≤0.7时,MnBi_xAl_0.15薄膜的Kerr角与MnBi_x薄膜相比有显著增大;而当x＞0.7时,MnBi_xAl_0.15的Kerr角则比MnBi_x的要不,633nm波长测量时,MnBi_{0.5Al0.15的Kerr角为2.75°,而相对应的MnBi0.5薄膜只有1.56°.MnBi05Al0.15薄膜的室温饱和磁化强度Ms为3×10⁵A/m,比MnBi0.5薄膜的Ms(4×10⁵A/m)要小.推测当0.4≤x≤0.7时,Al可能部分占据Bi空位和部分取代Mn位,由于晶格收缩使得Mn 3d电子与Bi 6p电子的杂化概率增大,从而导致其Kerr效应增强. 关键词：}     

(Ga,Mn)As中电流诱导自旋极化的磁光Kerr测量

在GaAs吸收带边附近, 利用磁光Kerr效应测量了(Ga,Mn)As和p-GaAs样品的电流诱导Kerr旋转谱和反射谱, 两者都呈现出Lorentz曲线形状. 电流诱导Kerr旋转角和反射率随着电流的增大而增大, Kerr角与电流的大小成正比关系, 反射率与电流的平方成正比关系. (Ga,Mn)As的Kerr旋转角比p-GaAs的大了一个数量级, 这说明Mn原子的掺杂使得电流诱导的自旋极化增强. 另外, 还测量了温度和入射光偏振方向对电流诱导Kerr旋转谱和反射谱的影响. 发现随着温度的升高, Kerr谱和反射谱均向长波方向移动, 这与GaAs带边随温度的变化是一致的.     

Effect of diffusion and stresses on the magnetic properties of multilayer Fe/Pd and Fe/Ge films

Multilayer [Fe/Pd]₁₀ and [Fe/Ge]₁₀ films were studied using ferromagnetic resonance, magnetic-force and atomic-force microscopies, magneto-optical Kerr effect, and X-ray diffraction. It was shown that an increase in the interlayer thickness causes changes in magnetic parameters, such as the induced anisotropy, effective magnetization, coercive force, and the parameters of the fine magnetic structure. Reasons of the changes in the magnetic parameters were established.     

The study of Al3(Mn,Pd) crystal and Al–Mn–Pd decagonal quasicrystal by spherical aberration-corrected scanning transmission microscopy and atomic-resolution energy dispersive X-ray spectroscopy

An Al₃Mn-type Al₃(Mn, Pd) crystal and an Al–Mn–Pd decagonal quasicrystal (DQC) in an Al₇₀Mn₂₀Pd₁₀ alloy are studied using a spherical aberration (Cs)-corrected scanning transmission electron microscope (STEM) with high-angle annular dark-field (HAADF) and annular bright-field (ABF) techniques, together with atomic-resolution energy dispersive X-ray spectroscopy (EDS). Mn and Pd atomic positions in the Al₃(Mn, Pd) structure projected along the b-axis (pseudo-tenfold rotational axis) are represented by separate bright dots in observed HAADF-STEM images. Besides, Al as well as Mn and Pd atomic positions are represented as dark dots in ABF-STEM images. Most Mn and Pd atomic positions in the Al₃(Mn, Pd) structure can be observed on atomic-resolution EDS maps. On the basis of the good correlation between the STEM images and the EDS maps, and also considering the structure of the Al₃(Mn, Pd) crystal, which was determined by X-ray diffraction using a single crystal, observed HAADF and ABF-STEM images of the Al–Mn–Pd DQC have been interpreted. Pd and Mn atomic positions in the Al–Mn–Pd DQC can be detected on the observed EDS maps. It can be seen that Pd is enriched around the centre of the columnar clusters, having a decagonal section with 2 nm in diameter. It can therefore be concluded that Pd plays an important role in the stabilization of the decagonal clusters, which form the Al–Mn–Pd DQC structure.