Mn overlayers on PbTe（111）： Substitutional adsorption and interface formation

The formation of the Mn/Pb Te（111） interface is investigated by photoemission spectrum. The core level behavior of Mn 2p is consistent with Mn substitutional adsorption during the initial Mn deposition, forming a（√3 ×√3）R30？-Pb0.67Mn0.33 Te phase of the second layer. Further deposition of Mn can cause metallic Mn islands to cover the substitutional substrate. Ultraviolet photoemission measurements show that the Fermi level is shifted into the conduction band, indicating Ohmic contact formation at the Mn/Pb Te（111） interface. The valence band maximum associated with the Pb0.67Mn0.33 Te layer is located at 1.27 e V below the Fermi level, and a schematic electronic structure of the Mn/Pb Te（111）interface is given. The work function of the substituted substrate with Pb-covered Mn islands is determined to be 4.16 e V,in comparison with 4.35 e V for the Pb-covered substituted substrate and 3.95 e V for the pristine Pb Te（111） surface.     

Optically Forbidden Transition of A＇3Δu ← X3Σg-in Oxygen

The electron energy loss spectra for the valence-shell excitations of oxygen are measured at an incident electron energy of 2500 eV and at scattering angles from 4° to 8.5°. The dipole-forbidden and octupole-allowed transition of the A＇3Δu ←X3Σg- is observed from the measured spectra, and it is found that the peak profile of the A＇3Δu ←X3Σg^- excitation can be well represented by a Gaussin function. The energy position of 6.007±0.008 eV and Franck？Condon linewidth of 1.312±0.020 eV of the A＇3Δu ←X3Σg^-, which are independent of the scattering condition, have been determined for the first time. The peak profiles of the A＇3Δu ←X3Σg^- determined in this work provide a possibility to realize the spectral decomposition method of unfolding the Herzberg pseudocontinuum proposed by -ampbell ？t et al. [Phys. Rev. A 61 （2000） 022706]     

Effect of Gd doping on the magnetism and work function of Fe1-xGdx/Fe（001）

The magnetism and work function Ф of Fe1-xGdx/Fe （001） films have been investigated using first-principles methods based on the density functional theory. The calculated results reveal that Gd doping on the Fe （001） surface would greatly affect the geometrical structure of the system. The restruction of the surface atoms leads to the transition of magnetic coupling between Gd and Fe atoms from ferromagnetic （FM） for 0.5 ≤x ≤ 0.75 to antiferromagnetic （AFM） for x = 1.0. For Fe1-xGdx/Fe （001） （x = 0.25, 0.5, 0.75, 1.0）, the charge transfer from Gd to Fe leads to a positive dipole formed on the surface, which is responsible for the decrease of the work function. Moreover, it is found that the magnetic moments of Fe and Gd on the surface layer can be strongly influenced by Gd doping. The changes of the work function and magnetism for Fe1-xGdx/Fe （001） can be explained by the electron transfer, the magnetic coupling interaction between Gd and Fe atoms, and the complex surface restruction. Our work strongly suggests that the doping of the metal with a low work function is a promising way for modulating the work function of the magnetic metal gate.     

Charge trapping in surface accumulation layer of heavily doped junctionless nanowire transistors

We investigate the conductivity characteristics in the surface accumulation layer of a junctionless nanowire transistor fabricated by the femtosecond laser lithography on a heavily n-doped silicon-on-insulator wafer. The conductivity of the accumulation region is totally suppressed when the gate voltage is more positive than the flatband voltage. The extracted low field electron mobility in the accumulation layer is estimated to be 1.25 cm2·V-1·s-1. A time-dependent drain current measured at 6 K predicts the existence of a complex trap state at the Si–Si O2 interface within the bandgap. The suppressed drain current and comparable low electron mobility of the accumulation layer can be well described by the large Coulomb scattering arising from the presence of a large density of interface charged traps. The effects of charge trapping and the scattering at interface states become the main reasons for mobility reduction for electrons in the accumulation region.     

Chemisorption of Fe on Au-passivated Si（001） surface

The chemisorption of one monolayer of Fe atoms on a Au-passivated Si(001) surface is studied by using the self-consistent tight-binding linear muffin-tin orbital method. The Fe adatom chemisorption on an ideal Si(001) surface is also considered for comparison. The chemisorption energy and layer projected density of states for a monolayer of Fe atoms on Au-passivated Si(001) surface are calculated and compared with that of the Fe atoms on an ideal Si(001) surface. The charge transfer is investigated. It is found that the most stable position is at the fourfold hollow site for the adsorbed Fe atoms, which might sit below the Au surface. Therefore there will be a Au－Fe mixed layer at the Fe/Au－Si(100) interface. It is found that the adsorbed Fe atoms cannot sit below the Si surface, indicating that a buffer layer of Au atoms may hinder the intermixing of Fe atoms and Si atoms at the Fe/Au－Si(001) interface effectively, which is in agreement with the experimental results.     

Photoluminescence of a ZnO/GaN Heterostructure Interface

Growth of a ZnO/GaN heterostructure is carried out using pulsed laser deposition. By etching the ZnO layer from the ZnO/GaN structure, the photoluminescence （PL） of the associated GaN layer shows that the donor- acceptor luminescence of CaN shifts to about 3.27eV, which is consistent with the electroluminescence （EL） of n-ZnO/p-GaN already reported. XPS shows that oxygen diffuses into the CaN crystal lattice from the surface to 20nm depth. The PL spectra at different temperatures and excitation densities show that oxygen plays the role of potential fluctuation. The associated PL results of the interface in these LEDs could be helpful to understand the mechanism of EL spectra for ZnO/CaN p-n junctions.     

Suppressing Effects of Ag Wetting Layer on Surface Conduction of Er Silicide/Si(001) Nanocontacts

Current-voltage electrical characteristics of Er silicide/Si(001) nanocontacts are measured in situ in a scanning tunneling microscopy system. Introduced as a new technique to suppress surface leakage conduction on Si(001),a silver wetting layer is evaporated onto the substrate surface kept at room temperature with Er Si2 nanoislands already existing. The effects of the silver layer on the current-voltage characteristics of nanocontacts are discussed.Our experimental results reveal that the silver layer at coverage of 0.4–0.7 monolayer can suppress effectively the current contribution from the surface conduction path. After the surface leakage path of nanocontacts is obstructed, the ideality factor and the Schottky barrier height are determined using the thermionic emission theory, about 2 and 0.5 eV, respectively. The approach adopted here could shed light on the intrinsic transport properties of metal-semiconductor nanocontacts.     

Elastic behavior of disclination dipole near nanotube with surface/interface effect

In this paper, we present an analytical solution of the interaction of the nanotube （NT） with a wedge disclination dipole in nanotube-based composites. The corresponding boundary value problem is solved exactly by using complex potential functions. The explicit expression of the force exerted on disclination dipole is given by using the generalized Peach- Koehler formula. As a numerical illustration, both the equilibrium position and the stability of the disclination dipole are evaluated for different material combinations, relative thickness of an NT, surface/interface effects, and the features of the disclination dipole. The results show that as the thickness of the NT layer increases, the NT has a relatively major role in the force acting on the disclination dipole in the NT-based composite. The cooperative effect of surface/interface stresses and the NT becomes considerable as the increase of NT layer thickness. The equilibrium position may occur, even more than one, due to the influences of the surface/interface stress and the NT thickening. The influences of the surface/interface stresses and the thickness of the NT layer on the force are greatly dependent on the disclination angle.     

Spectral transmittance and module structure fitting for transmission-mode GaAs photocathodes

A transmission-mode GaAs photocathode includes four layers of glass,Si 3 N 4 ,Ga 1x Al x As and GaAs. A gradient-doping photocathode sample was obtained by molecular beam epitaxy and its transmittance was measured by spec-trophotometer from 600 nm to 1100 nm. The theoretical transmittance is derived and simulated based on the matrix formula for thin film optics. The simulation results indicate the influence of the transition layers and the three thin-film layers except glass on the transmittance spectra. In addition,a fitting coefficient needed for error modification enters into the fitted formula. The fitting results show that the relative error in the full spectrum reduces from 19.51% to 4.35% after the formula is modified. The coefficient and the thicknesses are gained corresponding to the minimum relative error,meanwhile each layer and total thin-film thickness deviation in the module can be controlled within 7%. The presence of glass layer roughness,layer interface effects and surface oxides is interpreted on the modification.     

PHOTOELECTRON SPECTROSCOPIC STUDY OF THE EFFECT OF Cs INTRALAYER ON THE BAND LINEUP OF Ge/InP(100) HETEROJUNCTION

The formation and band lineup of the Ge/InP(100) interface with or without alkali metal Cs intralayer (IL) are studied by means of X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS). It is found that the Cs atoms do not react with or diffuse into the subatrate and the Ge overlayer. The thin Cs IL will induce an increase of the valence band offset (ΔE_v) for the Ge/InP(100) heterojunction. The changes of ΔE_v are proportional to the IL thickness and them saturate for IL thickness of about one half of a monolayer of Cs IL. Without the IL, ΔE_v of the Ge/InP(100) heterojunction is equal to 0.70eV, and ΔE_v with one half of monolayer IL is up to 0.90eV. These results show that the interface dipole plays a major role in the band lineup at the heterojunction interface.     

Chemical Structure of HfO2/Si Interface with Angle-Resolved Synchrotron Radiation Photoemission Spectroscopy

Interracial chemical structure of HfO2/Si （100） is investigated using angle-resolved synchrotron radiation photoemission spectroscopy （ARPES）. The chemical states of Hf show that the Hf 4f binding energy changes with the probing depth and confirms the existence of Hf-Si-O and Hf Si bonds. The Si 2p spectra are taken to make sure that the interracial structure includes the Hf silicates, Hf silicides and SiOx. The metallic characteristic of the Hf-Si bonds is confirmed by the valence band spectra. The depth distribution model of this interface is established.     

Electrical Characteristics of Co/n-Si Schottky Barrier Diodes Using I-V and C-V Measurements

Electrical characteristics of Co/n-Si Schottky barrier diodes are analysed by current- voltage （I- V） and capacitancevoltage （C- V） techniques at room temperature. The electronic parameters such as ideality factor, barrier height and average series resistance are determined. The barrier height 0. 76 eV obtained from the C - V measurements is higher than that of the value 0. 70 eV obtained from the I - V measurements. The series resistance Rs and the ideality factor n are determined from the d ln（ I） /dV plot and are found to be 193.62 Ω and 1.34, respectively. The barrier height and the Rs value are calculated from the H（I） - I plot and are found to be 0.71 eV and 205.95Ω. Furthermore, the energy distribution of the interface state density is determined from the forward bias I - V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density Nss ranges from 6.484×10^11 cm^-2eV^-1 in （Ec - 0.446） eV to 2.801×10^10 cm^-2eV^-1 in （Ec - 0.631） eV, of the Co/n-Si Schottky barrier diode. The results show the presence of a thin interracial layer between the metal and the semiconductor.     

Determination of Mean Thickness of an Oxide Layer on a Silicon Sphere by Spectroscopic Ellipsometry

One of the biggest obstacles to reduce the uncertainty of the Avogadro constant NA is such that there will be an oxide layers on the surface of a silicon sphere. The thickness of this layer is measured by a modified spectroscopic ellipsometer, which can eliminate the influence of the curved surface, and the results are calibrated by x-ray reflectivity. Fifty positions distributed nearly uniformly on the surface of the silicon sphere are measured twice. The results show that the mean thickness of the overall oxide layer is 3.75 nm with the standard uncertainty of 0.21 nm, which means that the relative uncertainty component of NA owing to this layer can be reduced to 1.2 × 10^-8.     

Atomic and Electronic Structures of Cd0.96Zn0.04Te（l10） Surface

X-Ray diffraction is used to analyse the lattice structure of Cdo.96Zno.o4 Te （CZT）, and the lattice constant is measured to be 0.647nm. The atomic structure of the clean CZT（110） surface obtained by Ar^＋ etching in vacuum is observed by low-energy electron diffraction, where no surface reconstruction is discovered. Angleresolved photoemission spectroscopy was used to characterize the surface state of the clean CZT （110） surface, by which we find a 1.5-eV-wide surface band with the peak at 0.9eV below the Fermi energy containing about 6.9 × 10^14 electrons/cm^2, approximately one electron per surface atom.     

Structural analysis of oxygen segregated Nb(110) surface by photoelectron diffraction

The atomic structure of the Nb(110) surface with oxygen segregated from bulk by annealing at 1500K in UHV has been analyzed by electron and photoelectron diffraction techniques. The observed LEED patterns indicate the modulation of topmost Nb layer in [11ˉ0] direction. Relation of unit cells of substrate and overlayer was determined. The surface component in the Nb 3d photoelectron spectra has a chemical shift of 1.6eV corresponding to that of NbO. The thickness of Nb oxide overlayer is estimated to be about one or two atomic layers. The Nb 3d spectra collected at 4945 different directions are fitted with bulk and surface components. Photoelectron diffraction patterns from Nb atoms within overlayer as well as bulk are successfully extracted. Topmost oxygen atoms are found to be located at about 1.2 Å above the Nb plane. Presented at the X-th Symposium on Suface Physics, Prague, Czech Republic, July 11–15, 2005.     

INTERFACE FORMATION OF Ge/ZnSe(100) AND Ge/ZnS(111) HETEROJUNCTIONS STUDIED BY SYNCHROTRON RADIATION PHOTOEMISSION

The microscopic evolution of interface formation between Ge and Ⅱ-Ⅵ compounds such as ZnSe and ZnS single crystals has been studied by synchrotron radiation photoemission spectroscopy and low energy electron diffraction. Core level intensity measurements from the substrate as well as from the overlayer show a nearly ideal two-dimensional growth mode for the deposition of Ge on ZnSe(100) surface. How-ever, there is a certain deviation from the ideal two-dimensional mode in the case of Ge/ZnS(111) due to the diffusion of substrate atoms into Ge overlayer. Surface semi-tire core level spectra indicate that the reaction of Ge with S atoms at Ge/ZnS(111) interfaces is much stronger than that of Ge with Se atoms at Ge/ZnSe(100) interfaces.     

High-mobility germanium p-MOSFETs by using HCI and （NH4）2S surface passivation

To achieve a high-quality high-κ/Ge interfaces for high hole mobility Ge p-MOSFET applications, a simple chemical cleaning and surface passivation scheme is introduced, and Ge p-MOSFETs with effective channel hole mobility up to 665 cm2/V.s are demonstrated on a Ge （111） substrate. Moreover, a physical model is proposed to explain the dipole layer formation at the metal-oxide-semiconductor （MOS） interface by analyzing the electrical characteristics of HCl- and （NH4）2S-passivated samples.     

Analysis of the injection layer of PTCDA in OLEDs using x-ray photoemission spectroscopy and atomic force microscopy

Through the investigation of the sample surface and interface of 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA)/indium-tin-oxide (ITO) thin films using atomic force microscopy, it has been found that the surface is complanate, the growth is uniform and the defects cover basically the surface of ITO. Furthermore, the number of pinholes is small. The analysis of the sample surface and interface further verifies this result by using x-ray photoemission spectroscopy . At the same time, PTCDA is found to have the ability of restraining the diffusion of chemical constituents from ITO to the hole transport layer, which is beneficial to the improvement of the performance and the useful lifetime of the organic light emitting diodes (OLEDs).     

Interfacial electronic structure at a metal–phthalocyanine/graphene interface:Copper–phthalocyanine versus iron–phthalocyanine

The energy level alignment of CuPc and FePc on single-layer graphene/Ni(111)(SLG/Ni)substrate was investigated by using ultraviolet and X-ray photoelectron spectroscopy(UPS and XPS).The highest occupied molecular orbitals(HOMOs)in a thick layer of CuPc and FePc lie at 1.04 eV and 0.90 eV,respectively,below the Fermi level of the SLG/Ni substrate.Weak adsorbate–substrate interaction leads to negligible interfacial dipole at the CuPc/SLG/Ni interface,while a large interfacial dipole(0.20 eV)was observed in the case of FePc/SLG/Ni interface,due to strong adsorbate–substrate coupling.In addition,a new interfacial electronic feature was observed for the first time in the case of FePc on SLG/Ni substrate.This interfacial state can be attributed to a charge transfer from the SLG/Ni substrate to unoccupied orbitals of FePc.     

Ultrathin Pb film growth on Cu（111） studied by photoemission

The valence bands and the Pb 5d,Cu 3p core levels of Pb films evaporated on Cu(111) were measured by synchrotron radiation photoemission and characterized by low-energy electron diffraction(LEED) and Auger electron spectroscopy(AES).The variation of the surafce state at the center of the surface Brillouin zone (SBZ) of Cu(111) with Pb coverage shows that the submonolayer Pb grows on Cu(111) at room temperature(RT) as two-dimensional(2D) islands.With the Pb coverage increasing,the Pb 5d5/2 core level shifts to higher binding energy monotonically.While the Cu 3p3/2 core level is shifted toward higher binding energy by about 120 meV due to the deposition of 1.0ML Pb.At low Ph coverage,subsequent annealing at 200℃ gives rise to Pb-Cu surface alloy formation in the first layer of Cu(111).The Pb 5d core level is shifted toward Fermi level by 20-30 meV due to the surface alloying.An assumption about electron charge transfer from Cu to Pb was adopted to interpret the observed cored level shifts.2001 Published by Elsevier Science Ltd.