氧与bcc相Co（100）表面相互作用的光电发射研究

通过在ＧａＡｓ（１００）表面生长具有弱有序的ｂｃｃ相Ｃｏ超薄膜，利用同步辐射光电发射和ＸＰＳ，研究了室温下不同氧暴露量时Ｃｏ膜的氧吸附行为。价带谱和Ｃｏ３ｐ发射谱结果表明，当暴露氧量低于４Ｌ时，氧解离吸附；更高的氧暴露量导致表面ＣｏＯ相的成核与生成。     

YGG:Cr晶体的光谱特性

本文利用10K下的吸收谱,拟合计算了YGG:Cr的晶场能级,估算了黄昆因子和平均声子能量,讨论了R线随温度的红移和宽化.     

INTERFACE FORMATION OF Ge/ZnSe(100) AND Ge/ZnS(111) HETEROJUNCTIONS STUDIED BY SYNCHROTRON RADIATION PHOTOEMISSION

The microscopic evolution of interface formation between Ge and Ⅱ-Ⅵ compounds such as ZnSe and ZnS single crystals has been studied by synchrotron radiation photoemission spectroscopy and low energy electron diffraction. Core level intensity measurements from the substrate as well as from the overlayer show a nearly ideal two-dimensional growth mode for the deposition of Ge on ZnSe(100) surface. How-ever, there is a certain deviation from the ideal two-dimensional mode in the case of Ge/ZnS(111) due to the diffusion of substrate atoms into Ge overlayer. Surface semi-tire core level spectra indicate that the reaction of Ge with S atoms at Ge/ZnS(111) interfaces is much stronger than that of Ge with Se atoms at Ge/ZnSe(100) interfaces.