First-Principles Calculations of Atomic and Electronic Properties of T1 and In on Si（111）

The atomic and electronic structures of T1 and In on Si（111） surfaces are investigated using the firstprinciples total energy calculations. Total energy optimizations show that the energetically favored structure is 1/3 ML T1 adsorbed at the T4 sites on Si（111） surfaces. The adsorption energy difference of one T1 adatom between （√3 × √3） and （1 × 1） is less than that of each In adatom. The DOS indicates that TI 6p and Si 3p electrons play a very important role in the formation of the surface states. It is concluded that the bonding of TI adatoms on Si（111） surfaces is mainly polar covalent, which is weaker than that of In on Si（111）. So T1 atom is more easy to be migrated than In atom in the same external electric field and the structures of T1 on Si（111） is prone to switch between （√3 × √3） and （1 × 1）.     

对气体一维输运过程稳定态方程的讨论

分析讨论了气体输运过程的稳定态方程的物理内涵,以及在气体一维输运过程中的应用方法。     

Au钝化Si(100)表面的电子特性

用TB-LMTO方法研究单层的Au原子在理想的Si(100)表面的化学吸附.计算了Au原子在不同位置的吸附能,吸附体系与清洁Si(100)表面的层投影态密度, 以及电子转移情况.结果表明, Au原子在吸附面上方的A位(顶位)吸附最稳定, Au钝化Si(100)表面可以取得明显的钝化效果, 这一结论与实验事实相符合.     

Surfactant Effects of Au on Polar ZnO Surfaces

The electronic properties of one monolayer of Au atoms on polar ZnO surfaces are examined by first-principles slab calculations. It is found that an Au ad-layer on top of the surface is energetically more favourable than other gold diffused cases, and Au capping layer on the ZnO polar surfaces may modify the growing properties of ZnO nanostructures by enhancing the binding energy.     

水分子和二氧化铈(111)表面相互作用的DFT+U研究

采用引入Hubbard参数U修正的密度泛函理论(DFT+U)方法, 对水分子在二氧化铈(111)表面的吸附作用进行了研究. 计算结果表明: 在氧化的二氧化铈(111)表面, 水分子以单氢键构型吸附在二氧化铈表面, 但是不能自发解离; 在还原的二氧化铈(111)表面, 水分子或化学吸附在衬底上, 或自发解离成表面羟基结构. 与氢气在氧化的二氧化铈(111)表面上物理吸附体系的总能相比, 羟基化表面构型是能量更低的构型, 所以羟基解离形成氢气, 从而使表面被氧化的过程需要有外部条件, 反应不能自发进行. 因此, 水分子在还原的二氧化铈(111)表面有两个可能的状态, 即无氢键结构的化学吸附和表面羟基结构的解离吸附. 在一定的外部条件下, 表面羟基结构进一步解离形成氢气, 并使还原的二氧化铈(111)表面得以氧化.     

Chemisorption of Fe on Au-passivated Si（001） surface

The chemisorption of one monolayer of Fe atoms on a Au-passivated Si(001) surface is studied by using the self-consistent tight-binding linear muffin-tin orbital method. The Fe adatom chemisorption on an ideal Si(001) surface is also considered for comparison. The chemisorption energy and layer projected density of states for a monolayer of Fe atoms on Au-passivated Si(001) surface are calculated and compared with that of the Fe atoms on an ideal Si(001) surface. The charge transfer is investigated. It is found that the most stable position is at the fourfold hollow site for the adsorbed Fe atoms, which might sit below the Au surface. Therefore there will be a Au－Fe mixed layer at the Fe/Au－Si(100) interface. It is found that the adsorbed Fe atoms cannot sit below the Si surface, indicating that a buffer layer of Au atoms may hinder the intermixing of Fe atoms and Si atoms at the Fe/Au－Si(001) interface effectively, which is in agreement with the experimental results.     

电磁场切向边值关系的讨论

针对目前电动力学和电磁场理论教材中电磁场切向边值关系的推导方法不一及存在的问题,介绍两种推导电磁场切向边值关系的方法并作了相应的讨论.     

Chemisorption of Au on Si（001） surface

The chemisorption of one monolayer of Au atoms on an ideal Si(001) surface is studied by using the self-consistent tight binding linear muffin-tin orbital method. Energies of the adsorption system of a Au atom on different sites are calculated. It is found that the most stable position is A site (top site) for the adsorbed Au atoms above the Si(001) surface. It is possible for the adsorbed Au atoms to sit below the Si(001) surface at the B_1 site(bridge site), resulting in a Au－Si mixed layer. This is in agreement with the experiment results. The layer projected density of states is calculated and compared with that of the clean surface. The charge transfer is also investigated.     

Donor Binding Energy in GaAs/Ga_(1-x) Al_xAs Quantum Well:the Laser Field and Temperature Effects

Based on the effective-mass approximation theory and variational method, the laser field and temperature effects on the ground-state donor binding energy in the GaAs/Ga1-xAlx As quantum well (QW) are investigated. Numerical results show that the donor binding energy depends on the impurity position, laser parameter, temperature, Al composition, and well width. The donor binding energy is decreased when the laser field and temperature are increased in the QW for any impurity position and QW parameter case. Moreover, the laser field has an obvious influence on the donor binding energy of impurity located at the vicinity of the QW center. In addition, our results also show that the donor binding energy decreases (or increases) as the well width (or Al composition x) increases in the QW.     

S钝化GaAs(100)表面的电子特性

用TB-LMTO方法研究单层的S原子在理想的GaAs (100) 表面的化学吸附, 对GaAs(100)表面是Ga-和As-中断两种情况分别进行考虑. 计算了S原子在不同位置的吸附能、吸附体系与清洁的GaAs(100)表面的层投影态密度, 以及电子转移情况. 结果表明, 两种情况下S原子都是桥位吸附最稳定, S-Ga相互作用比S-As稍强, S钝化GaAs(100)表面可以取得明显的钝化效果.