Winograd矩阵乘法算法用于任意阶矩阵时的一种新处理方法

摘要t矩阵乘法StraSsen算法及其变形winograd算法用分而治之的方法把矩阵乘法时间复杂性由传统的D(n。)改进到0(佗kg。n.但是对于奇数阶矩阵,在划分子矩阵时,要作特殊处理才能继续使用此算法.本文提出了一种非等阶“十”字架划分方法,可以最少化填零,最大化性能,使得奇数阶矩阵乘法的时间复杂性更加接近偶数阶矩阵乘法的效果.计算实例显示该方法是有效的.     

High-mobility germanium p-MOSFETs by using HCl and(NH_4)_2S surface passivation

To achieve a high-quality high-κ/Ge interfaces for high hole mobility Ge p-MOSFET applications,a simple chemical cleaning and surface passivation scheme is introduced,and Ge p-MOSFETs with effective channel hole mobility up to665 cm2/V·s are demonstrated on a Ge(111) substrate.Moreover,a physical model is proposed to explain the dipole layer formation at the metal–oxide–semiconductor(MOS) interface by analyzing the electrical characteristics of HCl- and(NH4)2S-passivated samples.     

关于赋范空间上连续自映射的回归点

在赋范空间中讨论回归点的性质,主要得到了结果：（1）如果,是序列紧赋范空间X上的连续双射,x是f的任一回归点,则对于任意整数N〉0都存在f的回归点x0∈X使得f^n（x0）=x;（2）序列紧赋范空间上连续自映射的回归点集是f的强不变子集;（3）如果f是局部连通赋范空间X上的连续自映射,则f的每一个回归点或是类周期点或是类周期点的聚点．作为推论,在实直线段上得到了类似的结论．     

高迁移率In0.6Ga0.4As沟道MOSHEMT与MOSFET器件特性的研究

从模拟和实验两个方面对高迁移率In_0.6Ga_0.4As沟道金属氧化物半导体高电子迁移率晶体管（MOSHEMT）和金属氧化物半导体场效应晶体管（MOSFET）器件开展研究工作.研宄发现InAlAs势垒层对Ino_0.6Ga_0.4AsMOSHEMT的特性具有重要影响.与Ino_0.6Ga_0.4As MOSFET相比,Ino_0.6Ga_0.4As MOSHEMT表现出优异的电学特性.实验结果表明,In_0.6Ga_0.4As MOSHEMT的有效沟道迁移率达到2812 cm²/V.s^-1,是In_0.6Ga_0.4As MOSFET的3.2倍.0.02 mm栅长的MOSHEMT器件较相同栅长的MOSFET器件具有更高的驱动电流、更大的跨导峰值、更大的开关比、更高的击穿电压和更小的亚阈值摆幅.     

Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors

A physical model for scaling and optimizing InGaAs/InP double heterojunction bipolar transistors(DHBTs) based on hydrodynamic simulation is developed.The model is based on the hydrodynamic equation,which can accurately describe non-equilibrium conditions such as quasi-ballistic transport in the thin base and the velocity overshoot effect in the depleted collector.In addition,the model accounts for several physical effects such as bandgap narrowing,variable effective mass,and doping-dependent mobility at high fields.Good agreement between the measured and simulated values of cutoff frequency,f t,and maximum oscillation frequency,f max,are achieved for lateral and vertical device scalings.It is shown that the model in this paper is appropriate for downscaling and designing InGaAs/InP DHBTs.     

Extrinsic Base Surface Passivation in High Speed ＂Type-II＂ GaAsSb/InP DHBTs Using an InGaAsP Ledge Structure

Type-II GaAsSb/InP DHBTs with selectively-etched InGaAsP ledge structures are fabricated and characterized for the first time. The novel InGaAsP/GaAsSb/InP DHBTs with a 20nm lattice-matched GaAsSb base and a 75 nm InP collector have a dc current gain improvement by a factor of 2 and a cutoff frequency fT of 190 GHz. The InGaAsP ledge design provides a simple but effective approach to suppress the extrinsic base surface recombination and enable GaAsSb/InP DHBTs to further increase the operating frequencies and integration levels for millimeter wave applications.     

等离子体增强热丝化学气相沉积法生长取向金刚石薄膜

采用等离子体增强热丝化学气相沉积法在Ｓｉ（１１１）衬底上生长金刚石薄膜,扫描电子显微镜（ＳＥＭ）和Ｘ射线衍射（ＸＲＤ）分析结果表明金刚石晶体颗粒在（１１１）方向实现了取向生长。     

Effect of the Si-doped In0.49Ga0.51P barrier layer on the device performance of In0.4Ga0.6As MOSFETs grown on semi-insulating GaAs substrates

In0.4Ga0.6As channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with and without an Si-doped In0.49Ga0.51P barrier layer grown on semi-insulating GaAs substrates have been investigated for the first time. Compared with the In0.4Ga0.6As MOSFETs without an In0.49Ga0.51P barrier layer, In0.4Ga0.6As MOSFETs with an In0.49Ga0.51P barrier layer show higher drive current, higher transconductance, lower gate leakage current, lower subthreshold swing, and higher effective channel mobility. These In0.4Ga0.6As MOSFETs (gate length 2 μm) with an In0.49Ga0.51P barrier layer exhibit a high drive current of 117 mA/mm, a high transconductance of 71.9 mS/mm, and a maximum effective channel mobility of 1266 cm2/(V·s).     

近红外光谱分辨率对绿茶氮含量模型的影响

以绿茶为研究对象,氮含量为定量分析指标,研究了不同分辨率(2,4,6,8,16 cm-1)对近红外光谱图及氮含量模型的影响。结果表明：仪器的分辨率影响光谱图的质量,分辨率越高,得到的信息越丰富,但同时噪音增大;分辨率越低,光谱图更加平滑,信息量减少,当分辨率太低时光谱失真严重。分辨率为4 cm-1时,模型外部验证集RMSEP值为0.054 6,明显低于其他模型,相关系数为0.998 2,预测性能最好;模型预测精度也较好,STDEV和RSD分别为0.020和0.334。分辨率4 cm-1为最优分辨率。试验可以为近红外光谱仪采集绿茶光谱图提供参数选择依据,提高模型的稳定性与预测性能,促进近红外光谱检测技术在茶叶上的应用与推广。     

Effect of ultrathin GeO_x interfacial layer formed by thermal oxidation on Al_2O_3 capped Ge

We propose a modified thermal oxidation method in which an Al2O3 capping layer is used as an oxygen blocking layer （OBL） to form an ultrathin GeOx interracial layer, and obtain a superior Al2O3/GeOx/Ge gate stack. The GeOx interfacial layer is formed in oxidation reaction by oxygen passing through the Al2O3 OBL, in which theAl2O3 layer could restrain the oxygen diffusion and suppress the GeO desorption during thermal treatment. The thickness of the GeOx interfacial layer would dramatically decrease as the thickness of Al2O3 OBL increases, which is beneficial to achieving an ultrathin GeOx interfacial layer to satisfy the demand for small equivalent oxide thickness （EOT）. In addition, the thickness of the GeOx interfacial layer has little influence on the passivation effect of the Al2O3/Ge interface. Ge （100） p-channel metal- oxide-semiconductor field-effect transistors （pMOSFETs） using the Al2O3/GeOx/Ge gate stacks exhibit excellent electrical characteristics; that is, a drain current on-off （Ionloft） ratio of above 1 104, a subthreshold slope of - 120 mV/dec, and a peak hole mobility of 265 cm2/V.s are achieved.