A new tunnel recombination junction is fabricated for n–i–p type micromorph tandem solar cells. We insert a thin heavily doped hydrogenated amorphous silicon (a-Si:H) p + recombination layer between the n a-Si:H and the p hydrogenated nanocrystalline silicon (nc-Si:H) layers to improve the performance of the n–i–p tandem solar cells. The effects of the boron doping gas ratio and the deposition time of the p-a-Si:H recombination layer on the tunnel recombination junctions have been investigated. The current-voltage characteristic of the tunnel recombination junction shows a nearly ohmic characteristic, and the resistance of the tunnel recombination junction can be as low as 1.5 ·cm 2 by using the optimized p-a-Si:H recombination layer. We obtain tandem solar cells with open circuit voltage V oc = 1.4 V, which is nearly the sum of the V oc s of the two corresponding single cells, indicating no V oc losses at the tunnel recombination junction. 相似文献
Perovskite/silicon (Si) tandem solar cells have been recognized as the next-generation photovoltaic technology with efficiency over 30% and low cost. However, the intrinsic instability of traditional three-dimensional (3D) hybrid perovskite seriously hinders the lifetimes of tandem devices. In this work, the quasi-two-dimensional (2D) (BA)2(MA)n-1PbnI3n+1 (n=1, 2, 3, 4, 5) (where MA denotes methylammonium and BA represents butylammonium), with senior stability and wider bandgap, are first used as an absorber of semitransparent top perovskite solar cells (PSCs) to construct a four-terminal (4T) tandem devices with a bottom Si-heterojunction cell. The device model is established by Silvaco Atlas based on experimental parameters. Simulation results show that in the optimized tandem device, the top cell (n=4) obtains a power conversion efficiency (PCE) of 17.39% and the Si bottom cell shows a PCE of 11.44%, thus an overall PCE of 28.83%. Furthermore, by introducing a 90-nm lithium fluoride (LiF) anti-reflection layer to reduce the surface reflection loss, the current density (Jsc) of the top cell is enhanced from 15.56 mA/cm2 to 17.09 mA/cm2, the corresponding PCE reaches 19.05%, and the tandem PCE increases to 30.58%. Simultaneously, in the cases of n=3, 4, and 5, all the tandem PCEs exceed the limiting theoretical efficiency of Si cells. Therefore, the 4T quasi-2D perovskite/Si devices provide a more cost-effective tandem strategy and long-term stability solutions. 相似文献
In order to considerable enhancement of the efficiency of silicon solar cells, in this paper, for the first time, we present a new proposal for silicon based tandem solar cells. For investigation of this idea, we have evaluated the characteristics of 3C–SiC/Si crystalline tandem solar cells connected series by a tunneling junction, under air mass 1.5 global irradiance spectrums. A 2D simulation including the effects of surface passivation, back surface field (BSF), and carrier tunneling have been performed to obtain the optical and electrical characteristics of single junction silicon, 3C–SiC, and finally the tandem cells. The obtained data illustrate that the best design parameters considering the experimental limitations can be obtained. High energy conversion efficiency for the proposed structure of 26.09% has been achieved for 3C–SiC/Si tandem structure driven by 20.49% and 17.86% conversion efficiencies of single junction Si and 3C–SiC solar cells, respectively. Our results justifies that the higher conversion efficiency of the Si-based tandem structure compared with 3C–SiC and Si cells stems from enhancement of open circuit voltage and fill factor parameter at the hands of decrease in short circuit current limited by the top 3C–SiC cell. 相似文献
The level structure of 190Pt has been studied experimentally using the 176Yb (18O, 4n) reaction at beam energies of 88 and 95 MeV. γ-γ-t coincidence measurements were carried out. Based onthe analysis of γ-γ coincidence relationships, the level scheme of 190Pt is extended to high-spin states. A new structure built on the 3413.6 keV 14+ state has been observed, and the vi1-213/2 vh-19/2 vj (j = p3/2 or f5/2) configuration is tentatively assigned to it. 相似文献
Perovskite solar cells (PSCs) have witnessed great achievement in the past decade. Most of previous researches focus on the n—i—p structure of PSCs with ultra-high efficiency. While the n—i—p devices usually used the unstable charge transport layers, such as the hygroscopic doped spiro-OMeTAD, which affect the long-term stability. The inverted device with the p—i—n structure owns better stability when using stable undoped organic molecular or metal oxide materials. There are significant progresses in inverted PSCs, most of them related to charge transport or interface engineering. In this review, we will mainly summarize the inverted PSCs progresses related to the interface engineering. After that, we prospect the future direction on inverted PSCs. 相似文献
In this Letter, we investigate the photovoltaic properties of heterojunction solar cells based on n‐GaN nanowire (NW)/ p‐Si substrate heterostructures by means of numerical modeling. Antireflection properties of the NW array on the top of Si substrate were studied theoretically to show an order of magnitude enhancement in antireflection properties in comparison to the pure Si surface (2.5% vs. 33.8%). In order to determine the optimal morphology and doping levels of the structure with maximum possible efficiency we simulated its properties. The carried out simulation showed that the maximum efficiency should be more than 20% under AM1.5D illumination. The proposed design opens new perspectives and opportunities in the field of heterojunction tandem solar cell researches.
用腺病毒重组体（AdCMV p53/GFP）转染经0.5, 1.0和2.0 Gy γ射线辐射处理的前列腺癌细胞[PC 3（ nullp53）], 用克隆形成法检测细胞增殖能力, 用流式细胞分析法测定腺病毒重组体转染率和外源性p53蛋白表达。 结果提示, 辐射诱导使腺病毒重组体转染PC 3细胞提高7%—39%。 辐射联合 AdCMV p53 转染组p53表达水平提高18.5%—35.4%。 与单纯 AdCMV p53 转染组和单纯辐射组相比, 辐射联合 AdCMV-p53 转染组细胞存活率分别降低25%—64%和22%—65%。 To determine whether low dose pre irradiation could enhance adenovirus mediated p53 transfer and expression in human prostate adenocarcinoma, the PC 3 cells were pre exposed to γ rays, and then infected with replication deficient adenovirus recombinant vectors, containing human wild type p53 (AdCMV p53) or green fluorescent protein gene (AdCMV GFP) respectively (γ ray irradiation + AdCMV p53 /GFP infection). The exogenous gene transfer and expression were detected by flow cytometric analysis. The GFP transfer frequencies in γ irradiation + AdCMV GFP infection groups were 7%—39% more than those in AdCMV GFP infection groups. The p53 levels in the γ irradiation + AdCMV p53 infection groups were 18.5%—35.4% more than those in AdCMV p53 infection groups (p<0.05),suggesting that low dose (less than or equal to 1.0 Gy) irradiation could significantly promote exogenous p53 transfer and expression in the PC 3 cells. The survival fractions for the γ irradiation + AdCMV p53 infection groups were 25%—64%, 22%—65% less than those for AdCMV p53 infection, or γ irradiation groups, respectively (p<0.05). 相似文献
This paper identifies the contributions of p-a-SiC:H layers and i-a-Si:H layers to the open circuit voltage of p-i-n type a-Si:H solar cells deposited at a low temperature of 125 C.We find that poor quality p-a-SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely.A significant improvement in open circuit voltage has been obtained by using high quality p-a-SiC:H films optimized at the "low-power regime" under low silane flow rates and high hydrogen dilution conditions. 相似文献
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