Charge transfer modification of inverted planar perovskite solar cells by NiOx/Sr:NiOx bilayer hole transport layer

Perovskite solar cells (PSCs) are the most promising commercial photoelectric conversion technology in the future. The planar p-i-n structure cells have advantages in negligible hysteresis, low temperature preparation and excellent stability. However, for inverted planar PSCs, the non-radiative recombination at the interface is an important reason that impedes the charge transfer and improvement of power conversion efficiency. Having a homogeneous, compact, and energy-level-matched charge transport layer is the key to reducing non-radiative recombination. In our study, NiO$_{x}$/Sr:NiO$_{x}$ bilayer hole transport layer (HTL) improves the holes transmission of NiO$_{x}$ based HTL, reduces the recombination in the interface between perovskite and HTL layer and improves the device performance. The bilayer HTL enhances the hole transfer by forming a driving force of an electric field and further improves $J_{\rm sc}$. As a result, the device has a power conversion efficiency of 18.44%, a short circuit current density of 22.81 mA$\cdot$cm$^{-2}$ and a fill factor of 0.80. Compared to the pristine PSCs, there are certain improvements of optical parameters. This method provides a new idea for the future design of novel hole transport layers and the development of high-performance solar cells.     

应用于钙钛矿太阳能电池中金属氧化物电子传输材料的研究进展

基于有机金属卤化铅钙钛矿材料作为光活性层的太阳能电池(PSCs)已经获得了25.2%的认证效率,是除硅基太阳能电池外被认为最有可能实现商业化的太阳能电池之一。电子传输层是PSCs器件结构的最基本组成之一,其构成材料与光活性层的成膜质量、界面电荷的快速提取以及能级匹配等密切相关。因而,电子传输材料在PSCs的光伏性能及稳定性调控方面发挥着重要作用。本文对应用在PSCs中的金属氧化物电子传输材料进行了回顾与总结,着重强调了材料的纳米结构与制备工艺、半导体特性与分类以及掺杂与界面修饰等方面的研究进展,并对其今后的发展进行了展望。     

Reveal the large open-circuit voltage deficit of all-inorganicCsPbIBr2 perovskite solar cells

Due to excellent thermal stability and optoelectronic properties, all-inorganic perovskite is one of the promising candidates to solve the thermal decomposition problem of conventional organic—inorganic hybrid perovskite solar cells (PSCs), but the larger voltage loss (V_loss) cannot be ignored, especially CsPbIBr₂, which limits the improvement of efficiency. To reduce V_loss, one promising solution is the modification of the energy level alignment between the perovskite layer and adjacent charge transport layer (CTL), which can facilitate charge extraction and reduce carrier recombination rate at the perovskite/CTL interface. Therefore, the key issues of minimum V_loss and high efficiency of CsPbIBr₂-based PSCs were studied in terms of the perovskite layer thickness, the effects of band offset of the CTL/perovskite layer, the doping concentration of the CTL, and the electrode work function in this study based on device simulations. The open-circuit voltage (V_oc) is increased from 1.37 V to 1.52 V by replacing SnO₂ with ZnO as the electron transport layer (ETL) due to more matching conduction band with the CsPbIBr₂ layer.     

TiO2/SnO2 electron transport double layers with ultrathin SnO2 for efficient planar perovskite solar cells

The electron transport layer (ETL) plays an important role on the performance and stability of perovskite solar cells (PSCs). Developing double ETL is a promising strategy to take the advantages of different ETL materials and avoid their drawbacks. Here, an ultrathin SnO₂ layer of ～ 5 nm deposited by atomic layer deposit (ALD) was used to construct a TiO₂/SnO₂ double ETL, improving the power conversion efficiency (PCE) from 18.02% to 21.13%. The ultrathin SnO₂ layer enhances the electrical conductivity of the double layer ETLs and improves band alignment at the ETL/perovskite interface, promoting charge extraction and transfer. The ultrathin SnO₂ layer also passivates the ETL/perovskite interface, suppressing nonradiative recombination. The double ETL achieves outstanding stability compared with PSCs with TiO₂ only ETL. The PSCs with double ETL retains 85% of its initial PCE after 900 hours illumination. Our work demonstrates the prospects of using ultrathin metal oxide to construct double ETL for high-performance PSCs.     

Low-temperature photo-activated inorganic electron transport layers for flexible inverted polymer solar cells

A simple and versatile route of forming sol–gel-derived metal oxide n-type electron transport layers (ETLs) for flexible inverted polymer solar cells (PSCs) is proposed using low-temperature photochemical activation process. The photochemical activation, which is induced by deep ultraviolet irradiation on sol–gel films, allows formation of metal oxide n-type ETLs such as zinc oxide (ZnO) and indium gallium zinc oxide films at a low temperature. Compared to poly(3-hexylthiophene)/phenyl-C₆₁-butyric acid methyl ester inverted PSCs with thermally annealed ZnO ETLs (optimized efficiency of 3.26 ± 0.03 %), the inverted PSCs with photo-activated ZnO ETLs showed an improved efficiency of 3.60 ± 0.02 %. The enhanced photovoltaic property is attributed to efficient charge collection from low overall series resistance and high surface area-to-geometric area ratio by the photo-activated ZnO ETLs.     

分步磁控溅射ZnO和/或功能化碳纳米粒子修饰ZnO电子传输层增强聚合物太阳能电池效率

氧化锌具有良好电子传输性和高透光性,ZnO作为电子传输层已被广泛应用于聚合物太阳能电池。但采用溶胶凝胶法和真空镀膜制备ZnO电子传输层,因ZnO界面具有大量缺陷,极大增加载流子复合。抑制ZnO界面复合电流和改善ZnO界面接触性能,是提高ZnO基电子传输层聚合物太阳能电池性能关键所在。基于P3HT:PCBM反转型聚合物太阳能电池,采用磁控溅射ZnO层,研究了离子液功能化碳纳米粒子(ILCNs)修饰层或Ar/O₂混合气体溅射沉积ZnO修饰层,以及Ar/O₂溅射ZnO界面层与ILCNs联合修饰ZnO界面的聚合物太阳能电池性能。纯Ar和Ar/O₂混合气体下一步溅射沉积ZnO电子传输层,其电池效率分别为2.2%和2.8%。经ILCNs修饰或Ar/O₂溅射ZnO修饰层,电池效率分别达到3.4%和3.1%,并且分步溅射ZnO层并联合ILCNs修饰ZnO界面,聚合物太阳能电池效率可提高到3.8%。ZnO修饰型聚合物太阳能电池克服了电化学阻抗负阻效应,降低了反向暗电流并显示出更好的整流特性。研究表明,采用ILCNs修饰ZnO层和分步溅射ZnO层能有效抑制ZnO界面缺陷和改善界面接触性能,而采用分步溅射ZnO层与ILCNs联合修饰ZnO界面,这种联合修饰ZnO界面方案,更能增强ZnO层电子传输和提取能力,是提高聚合物太阳能电池效率更为有效方案。     

Updated Progresses in Perovskite Solar Cells

In the last decade, perovskite solar cells(PSCs) have greatly drawn researchers' attention, with the power conversion efficiency surging from 3.8% to 25.5%. PSCs possess the merits of low cost, simple fabrication process and high performance, which could be one of the most promising photovoltaic technologies in the future. In this review, we focus on the summary of the updated progresses in single junction PSCs including efficiency, stability and large area module. Then, the important progresses in tandem solar cells are briefly discussed. A prospect into the future of the field is also included.     

界面修饰对有机-无机杂化钙钛矿太阳能电池性能的影响

作为近些年来最耀眼的明星材料之一,钙钛矿以其优异独特的光电特性成功吸引研究人员的广泛关注.自2009年报道了第一篇光电转换效率为3.8%的钙钛矿电池,到现在短短10年期间效率已经突破25.2%,几乎可以与商用多晶硅电池媲美.尽管其制备过程简单,但在薄膜的形成过程中很容易引入大量的缺陷.缺陷的存在会加速载流子的复合,阻碍载流子传输通道,不利于制备高效率的钙钛矿太阳能电池;同时也会影响钙钛矿电池工作的长期稳定性,加速材料的降解,阻碍了钙钛矿太阳能电池进一步商业化发展.因此,理解缺陷的存在机制并有效地抑制缺陷产生,对制备高性能长寿命器件至关重要.而界面修饰作为一种有效的钝化缺陷方法之一,已经被广泛使用.本文讨论了不同结构电池器件的缺陷产生位置及对器件性能的影响.分别从载流子传输层钝化策略和钙钛矿界面修饰策略入手,分析了常用的传输层/钙钛矿界面钝化缺陷的机制,指出了钝化策略发展的巨大优势,并对合适的钝化材料进行分类,希望能够对高重复性、高光电转换效率、长期工作稳定的钙钛矿太阳能电池发展提供有益的指导.     

基于硅锗异质结的二维量子点阵列的制备与表征

硅基半导体量子点中的自旋量子比特近几年来发展迅速,其单比特门与两比特门操作保真度已经突破了容错量子计算的阈值.在此基础上,如何构建硅基量子点二维阵列变得广受学界关注,然而二维阵列复杂的结构在器件制备和测量上均带来挑战.本文设计并成功制备了一种Si/SiGe异质结上的2×4结构八量子点二维阵列器件.借助输运测量方法测量了八量子点器件的全部电荷稳定性相图,并进一步地使用电荷感应调制测量方法得到了器件内的少电子区电荷稳定性相图,说明了对量子点电荷态的高灵敏度探测能力.此外,通过调控势垒电极展示了对量子点间隧穿耦合的调控作用并测量了多量子点耦合的电荷稳定性相图.本文的研究结果展示了使用Si/SiGe异质结构建自旋量子比特二维阵列的潜力,为未来硅量子点二维阵列的进一步扩展提供经验与参考.     

Surface modulation of halide perovskite films for efficient and stable solar cells

As the main distribution place of deep-level defects and the entrance of water, the interface is critical to determining both the power conversion efficiency (PCE) and the stability of perovskite solar cells (PSCs). Suitable interface design can dramatically passivate interface defects and optimize energy level alignment for suppressing the nonradiative recombination and effectively extracting the photogenerated carriers towards higher PCE. Meanwhile, a proper interface design can also block the interface diffusion of ions for high operational stability. Therefore, interface modification is of great significance to make the PSCs more efficient and stable. Upon optimized material choices, the three-dimensional halide perovskite graded junction layer, low-dimensional halide perovskite interface layer and organic salt passivation layer have been constructed on perovskite films for superior PSCs, yet a systematic review of them is missing. Thus, a guide and summary of recent advances in modulating the perovskite films interface is necessary for the further development of more efficient interface modification.     

退火温度对电子束蒸发沉积Cu_2O薄膜性能的影响

近年来,钙钛矿太阳电池(PSCs)得到了迅猛发展,而无机空穴传输材料(IHTMs)的使用可进一步降低电池的成本,提高电池的稳定性.本文通过电子束蒸发制备了Cu_2O薄膜,研究了空气中退火温度及时间对薄膜组成、结构及光电性能的影响,并构筑了p-i-n反型平面异质结钙钛矿太阳电池.研究发现:由于热解作用,直接通过电子束蒸发制备的薄膜为Cu_2O和Cu的混合物;而在空气中经过退火后,由于氧化作用,随着退火温度的升高,薄膜的组分由混合物转变为纯的Cu_2O,再转变成纯的CuO.通过控制退火温度制备的Cu_2O薄膜的光学带隙约为2.5 eV,载流子迁移率约为30 cm~2·V~(-1)·s~(-1).应用于PSCs,薄膜的最佳厚度为40 nm,但电池性能低于PEDOT:PSS基的PSCs.这主要是由于钙钛矿前驱液在Cu_2O薄膜的润湿性较差,吸收层中有大量微孔洞存在,致使漏电流增强,电池的性能降低.然而,当采用Cu_2O/PEDOT:PSS双HTMs设计时,由于PEDOT:PSS对Cu_2O具有较强的腐蚀作用,使电池性能恶化.     

Conductivity of boron-doped polycrystalline diamond films: influence of specific boron defects

The resistivity of boron doped polycrystalline diamond films changes with boron content in a very complex way with many unclear factors. From the large number of parameters affecting boron doped polycrystalline diamond film’s conductivity we focused on the role of boron atoms inside diamond grains in terms of boron contribution to the continuum of diamond electronic states. Using a combination of theoretical and experimental techniques (plane-wave Density Functional Theory, Neutron Depth Profiling, resistivity and Hall effect measurements, Atomic Force Microscopy and Raman spectroscopy) we studied a wide range of B defect parameters — the boron concentration, location, structure, free hole concentration and mobility. The main goal and novelty of our work was to find the influence of B defects (structure, interactions, charge localisation and spins) in highly B-doped diamonds — close or above the metal-insulator transition – on the complex material charge transport mechanisms.     

Factors influencing the performance of paintable carbon-based perovskite solar cells fabricated in ambient air

To date, many efforts have been made to improve the performance of paintable carbon-based(PC-based) perovskite solar cells(PSCs). Though great progress has been achieved, their power conversion efficiencies are still relatively low compared with hole-transport-materials-based PSCs. General research on influencing factors of performance in PC-based PSCs is still insufficient. In this work, PC-based PSCs were fabricated in ambient air and four groups of controlled experiments were performed in which the PbI_2 layers were prepared with or without antisolvent extraction treatment. These four groups of experiments were designed to find out the effect of different influencing factors on PC-based PSCs performance,for example, PbI_2 residual, the surface morphology of the perovskite film, the surface roughness of the perovskite film, and the contact status of the perovskite/carbon electrode interface. With a systematic analysis, we demonstrated that the contact status of the perovskite/carbon electrode interface played a vital role in PC-based PSCs, and a flat, smooth perovskite surface could help to improve this contact status significantly. Besides, on the precondition of a poor contact interface, no PbI_2 residual and a good surface morphology only brought limited benefits to the performances of PC-based PSCs.     

基于PTB7,Bis-PC_(70)BM,PC_(70)BM的高效率有机三元太阳能电池

我们将Bis-PC_(70)BM作为第二种电子受体混入基于PTB7:PC_(70)BM的聚合物太阳能电池中,制备了三元混合聚合物太阳能电池.相比于PC_(70)BM,Bis-PC_(70)BM的最低未占分子轨道(lowest unoccupied molecular orbital,LUMO)能级更高,所以掺入Bis-PC_(70)BM后器件的开路电压(V_(oc))得到了提升.Bis-PC_(70)BM在PTB7和PC_(70)BM之间起到桥梁的作用,因此在给体/受体界面创造了更多的电荷传递通道.而且从原子力显微镜中得到的结果来看,当混入质量比为3%的Bis-PC_(70)BM后薄膜的表面形貌更为平整,平均粗糙度从原来的1.87 nm降到了1.80 nm.能量转换效率(power conversion efficiency,PCE)达到7.00%,其中器件的V_(OC)为0.77 V,短路电流(J_(SC))为13.92 mA·cm~(-2),比PTB7:PC_(70)BM的器件效率6.07%提高了15%.     

表面等离子激元与F-P共振耦合平衡钙钛矿太阳能电池有源层内载流子产生速率

为提高有机-无机杂化钙钛矿太阳能电池（PSCs）光吸收效率、平衡有源层中载流子产生速率,将周期性纳米光栅结构引入到PSCs器件结构中。分析了光栅周期、光栅高度和有源层厚度对表面等离子激元（SPPs）与法布里-珀罗（F-P）共振耦合模式的影响。通过改变光栅周期,实现了SPPs与F-P共振耦合波长范围与钙钛矿材料的弱吸收光谱区域相重合,同时光栅高度的增加可以增大耦合模式的光谱宽度。SPPs与F-P共振耦合模式实现了金属电极与电子传输层（ETL）界面处的局域电场增强。结果表明:场增强效应扩展到有源区,有效提高了PSCs有源层远入射光侧在570~800 nm波长范围内的光吸收,进而提高了有源层远入射光区域的载流子产生速率。当光栅周期为250 nm、光栅高度为50 nm、源层厚度为300 nm时,PSCs在太阳光弱吸收光谱区域内的本征吸收提高了~12%,有源层远入射光侧载流子产生速率提高了~41%。     

Atomic structure and collision dynamics with highly charged ions

The research progresses on the investigations of atomic structure and collision dynamics with highly charged ions based on the heavy ion storage rings and electron ion beam traps in recent 20 years are reviewed. The structure part covers test of quantum electrodynamics and electron correlation in strong Coulomb field studied through dielectronic recombination spectroscopy and VUV/x-ray spectroscopy. The collision dynamics part includes charge exchange dynamics in ion-atom collisions mainly in Bohr velocity region, ion-induced fragmentation mechanisms of molecules, hydrogen-bound and van de Waals bound clusters, interference, and phase information observed in ion-atom/molecule collisions. With this achievements, two aspects of theoretical studies related to low energy and relativistic energy collisions are presented. The applications of data relevant to key atomic processes like dielectronic recombination and charge exchanges involving highly charged ions are discussed. At the end of this review, some future prospects of research related to highly charged ions are proposed.     

Theoretical design of azaacene-based non-fullerene electron transport material used in inverted perovskite solar cells

ABSTRACT

Inverted perovskite solar cells (PSCs) have attracted much attention due to their low-temperature and solution-based process. Electron transport layers are important components in inverted PSCs. Non-fullerene n-type organic small molecules seem to be more attractive as electron transport layers, because their structures are easy to be synthesised and modified. In this paper, density functional theory and semi-classical Marcus electron transfer theory were used to explore the electron transport properties in three azaacene derivatives, including one experimentally reported molecule, 1,4,9,16-tetrakis((triisopropylsilyl)ethynyl)quinoxalino[2^?,3^?:4^″,5^″]cyclopenta[1^″,2^″,3^″:5^′,6^′]acenaphtho[1^′,2^′:5,6]pyrazino[2,3-b]phenazine (1), and two theoretically designed molecules (2 and 3). Compound 2 is formed by substituting i-Pr groups in compound 1 with H atoms, which is designed to evaluate the effect of i-Pr groups on the electron transport properties. Compound 3 is designed by adding one more benzopyrazine group to the conjugation structure of compound 1. It shows that i-Pr group can increase HOMO and LUMO energy levels and improve solubility in organic solvent and hydrophobicity. Enlarging conjugation can not only decrease LUMO energy level and electron reorganisation energy, but also can increase solubility and electron mobility. So our designed compound 3 is expected to be a potential electron transport material in inverted PSCs.     

Ferroelectric Ba0.75Sr0.25TiO3 tunable charge transfer in perovskite devices

Interfacial charge recombination is a main issue causing the efficiency loss of the perovskite solar cells (PSCs). Here, ferroelectric Ba_0.75Sr_0.25TiO₃ (BST) is introduced as a polarization tunable layer to promote the interfacial charge transfer of the PSCs. The coexistence of ferroelectric polarization and charge carriers in BST is confirmed by density functional theory (DFT) calculations. Experimental characterization demonstrates the polarization reversal and the existence of domain in BST film. The BST film conductivity is tested as 2.98×10^-4 S/cm, which is comparable to the TiO₂ being used as the electron transporting layer (ETL) in PSCs. The calculations results prove that BST can be introduced into the PSCs and the interfacial charge transfer can be tuned by ferroelectric polarization. Thus, we fabricated the BST-based PSCs with a champion power conversion efficiency (PCE) of 19.05% after poling.     

Improved efficiency of ternary the blend polymer solar cells by doping a narrow band gap polymer material

A series of P3HT:PC71BM polymer solar cells(PSCs)with different PIDTDTQx doping concentrations were fabricated to investigate the effect of the PIDTDTQx as a complementary electron donor on the performance of PSCs.The power conversion efficiency(PCE)of the optimized ternary blend PSCs(with 2 wt%PIDTDTQx)reached 3.87%,which is 28%higher than that of the PSCs based on P3HT:PC71BM(control cells).The short-circuit current density(Jsc)was increased to 10.20 m A/cm2compared with the control cells.The PCE improvement could be attributed to more photon harvest and charge carrier transport by appropriate doping PIDTDTQx.The energy transfer from P3HT to PIDTDTQx was demonstrated from the 650 nm emission intensity decrease and the red-shifted emission peaks from 725 nm to 737 nm along with the increase of PIDTDTQx doping concentrations.