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直接键合的三结太阳能电池研究   总被引:2,自引:0,他引:2       下载免费PDF全文
彭红玲  张玮  孙利杰  马绍栋  石岩  渠红伟  张冶金  郑婉华 《物理学报》2014,63(17):178801-178801
本文研制了直接键合的三结GaInP/GaAs/InGaAsP太阳电池.直接键合技术可以减少晶格不匹配的材料在外延生长过程中产生的线位错和面缺陷,将缺陷限制在界面几十纳米的薄层而不向内扩散,是未来实现高效多结电池的发展趋势之一.此类电池国内鲜有报道.本文键合三结电池的键合界面采用p+GaAs/n+InP结构,得到电池开路电压3.0 V,在电池结构没有优化的情况下获得效率24%,表面未做减反膜.开路电压表明三结电池实现了串联,为单片集成的高效多结电池提供了新的途径.对实验结果进行了分析并给出了改进措施.  相似文献   
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采用原子力显微镜(AFM)和X射线光电子能谱(XPS)对不同处理流程后的InP(100)表面粗糙度及化学成分进行测试分析,优选出C、O元素浓度较低,且表面均方根粗糙度影响较小的表面清洗方法。通过比较键合结构的薄膜转移照片可知,表面清洗后的干燥与除气步骤可较好地去除键合界面中的空洞和气泡,从而提高键合质量。键合结构的电子显微镜(SEM)照片,X射线双晶衍射曲线(XRD)及I-V测试分析表明键合结构具有良好的机械、晶体及电学性质。  相似文献   
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研究了光子晶体波导对垂直腔面发射激光器(VCSEL)光束远场形貌的调控.采用三层对称平板波导模型分析了影响光子晶体VCSEL(PC-VCSEL)远场发散角的参数.研究表明,PC-VCSEL中光子晶体的填充比(空气孔直径和光子晶体周期的比值)以及空气孔的刻蚀深度控制了光束的发散角,低填充比和浅刻蚀的PC-VCSEL有利于获得低发散角的光束.设计并制作了两种不同结构参数的PC-VCSEL,这两种器件中光子晶体的填充比和空气孔的刻蚀深度不同.实验结果表明,低填充比和浅刻蚀的PC-VCSEL的发散角更低,与理论分析符合得很好.  相似文献   
4.
The low-threshold and high-power oxide-confined 850 nm AlInGaAs strained quantum-well (QW) vertical-cavity surface-emitting lasers (VCSELs) based on the intra-cavity contacted structure are fabricated. The threshold current of 0.1 mA for a 10-μm oxide-aperture device is obtained with the threshold current density of 0.127kA/cm^2. For a 22-μm oxide-aperture device, the peak optical output power reaches to 14.6mW at the current injection of 25 mA under the room temperature and pulsed operation with a threshold current of 2mA, which corresponds to the threshold current density of 0.526kA/cm^2. The lasing wavelength is 855.4nm. The full wave at half maximum is 2.2 nm. The analysis of the characteristics and the fabrication of VCSELs are also described.  相似文献   
5.
High-brightness tapered lasers with photonic crystal structures are designed and fabricated.A narrow taper angle is designed for the tapered section.The device delivers an output power of 3.3 W and a maximum wall-plug efficiency of 43%.The vertical beam divergence is around 110 at different currents.Nearly diffraction-limited beam qualities for the vertical and lateral directions are obtained.The lateral beam quality factor M~2 is below 2.5 and the vertical M~2 value is around 1.5 across the whole operating current range.The maximum brightness is 85 MW·cm~(-2)sr~(-1).When the current is above 3.3 A,the brightness is still above 80 MW·cm~(-2)sr~(-1).  相似文献   
6.
The 850-nm oxide-confined vertical-cavity surface-emitting lasers with petal-shape holey structures are presented.An area-weighted average refractive index model is given to analyse their effective index profiles,and the graded index distribution in the holey region is demonstrated.The index step between the optical aperture and the holey region is obtained which is related merely to the etching depth.Four types of holey vertical-cavity surface-emitting lasers with different parameters are fabricated as well as the conventional oxide-confined vertical-cavity surface-emitting laser.Compared with the conventional oxide-confined vertical-cavity surface-emitting laser without etched holes,the holey vertical-cavity surface-emitting laser possesses an improved beam quality due to its graded index distribution,but has a lower output power,higher threshold current and lower slope efficiency.With the hole number increased,the holey vertical-cavity surface-emitting laser can realize the single-mode operation throughout the entire current range,and reduces the beam divergence further.The loss mechanism is used to explain the single-mode characteristic,and the reduced beam divergence is attributed to the shallow etching.High coupling efficiency of 86% to a multi-mode fibre is achieved for the single-mode device in the experiment.  相似文献   
7.
通过界面有效吸收系数的计算及界面对腔模的反射率的影响可知,采用双面键合技术制备面发射激光器应使键合界面处于驻波场分布零点位置,同时界面厚度应该小于20 nm以使器件光学性能受界面吸收系数的影响较小.采用有限元方法分析VCSEL温度分布,结果证实薄的键合界面使VCSEL有源区温度对界面的热导率和电导率改变不敏感,而厚的键合界面将可能使有源区温度有较大地升高,给器件带来严重的不良影响.亲水键合和疏水键合的SEM照片说明疏水处理界面较薄,适合用于器件的制备.而亲水处理界面厚度>40 nm,对器件的光、热特性不利 关键词: 键合 面发射激光器 热导率 电导率  相似文献   
8.
关宝璐  郭霞  邓军  渠红伟  廉鹏  董立敏  陈敏  沈光地 《中国物理》2006,15(12):2959-2962
We report the study on a short wavelength-tunable vertical-cavity surface-emitting laser utilizing a monolithically integrated bridge tuning microelectromechanical system. A deformable-bridge top mirror suspended above an active region is utilized. Applied bridge-substrate bias produces an electrostatic force which reduces the spacing of air-gap and tunes the resonant wavelength toward a shorter wavelength (blue-shift), Good laser characteristics are obtained: such as continuous tuning ranges over 11 nm near 940 nm for 0-9 V tuning bias, the peak output power near 1 mW and the full-width-half-maximum limited to approximately 3.2-6.8 rim. A detailed simulation of the micromechanical and optical characteristics of these devices is performed, and the ratio of bridge displacement to wavelength shift has been found to be 3:1.  相似文献   
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