GaInP/GaAs/Ge三结太阳电池的电子辐照损伤效应

研究了1 MeV和1.8 MeV电子辐照下GaInP/GaAs/Ge三结太阳电池的辐照损伤效应.电学性能研究结果表明，GaInP/GaAs/Ge三结太阳电池的开路电压、短路电流和最大功率随辐照剂量的增加发生明显衰降，在1 MeV电子辐照下剂量为1×10¹⁵cm^-2时，与辐照前相比最大功率衰降了17.7%.暗I-V特性分析表明，高能电子辐照下三结电池串、并联电阻的变化是引起太阳电池电学性能衰降的重要原因.光谱响应分析结果表明，GaInP 关键词： GaInP/GaAs/Ge太阳电池 电子辐照 电学性能 光谱响应

Damage of electron irradiation to the GaInP/GaAs/Ge triple-junction solar cell

Radiation damages of 1 Mev and 1.8 Mev electrons to the triple-junction GaInP/GaAs/Ge solar cell are investigated. The results indicate that electric properties of the GaInP/GaAs/Ge triple-junction solar cell, such as open-circuit voltage, short-circuit current and maximum power, decrease obviously as the irradiation fluence increases. Under the irradiation fluence of 1×10¹⁵cm^-2 of 1 MeV electrons, the maximum power output is degraded by 17.7%. Under higher energy electron irradiation, the dark I-V characteristic shows that the changes in both the series and parallel connection resistance of the triple-junction cell are reasons causing the degradational of electrical properties. By the analysis of spectral response, the degradation in electric properties is primarily duc to the severe damage of the GaAs sub-cell. The damage of the sub-cell is associated closely with the obvious decrease in the collecting efficiency of light-generated carriers in the bottom of the base-zone. The key to improve the radiation resistance of the triple-junction GaInP/GaAs/Ge solar cell is to reduce the damage of the base-zone of GaAs sub-cell as much as possible.