| Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature |
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| 作者姓名： | 倪牮 张建军 曹宇 王先宝 李超 陈新亮 耿新华 赵颖 |
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| 作者单位： | Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronicInformation Science and Technology of Ministry of Education （Nankai University）, Tianjin 300071, China |
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| 基金项目： | Project supported by the National High Technology Research and Development Program of China (Grant No. 2009AA05Z422), the
National Basic Research Program of China (Grant Nos. 2011CBA00705, 2011CBA00706, and 2011CBA00707), and the Natural
Science Foundation of Tianjin (Grant No. 08JCZDJC22200). |
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| 摘 要： | This paper identifies the contributions of p-a-SiC:H layers and i-a-Si:H layers to the open circuit voltage of p-i-n type a-Si:H solar cells deposited at a low temperature of 125 C.We find that poor quality p-a-SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely.A significant improvement in open circuit voltage has been obtained by using high quality p-a-SiC:H films optimized at the "low-power regime" under low silane flow rates and high hydrogen dilution conditions.
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| 关 键 词： | amorphous silicon solar cell low temperature open-circuit voltage |
| 收稿时间： | 2011-01-26 |
Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature |
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| Ni Jian,Zhang Jian-Jun,Cao Yu,Wang Xian-Bao,Li Chao,Chen Xin-Liang,Geng Xin-Hua and Zhao Ying.Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature[J].Chinese Physics B,2011,20(8):87309-087309. |
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| Authors: | Ni Jian Zhang Jian-Jun Cao Yu Wang Xian-Bao Li Chao Chen Xin-Liang Geng Xin-Hua and Zhao Ying |
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| Institution: | Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Educa;Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Educa;Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Educa;Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Educa;Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Educa;Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Educa;Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Educa;Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Educa |
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| Abstract: | This paper identifies the contributions of p—a—SiC:H layers and i—a—Si:H layers to the open circuit voltage of p—i—n type a—Si:H solar cells deposited at a low temperature of 125 °C. We find that poor quality p—a—SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p—a—SiC:H films optimized at the “low-power regime” under low silane flow rates and high hydrogen dilution conditions. |
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| Keywords: | amorphous silicon solar cell low temperature open-circuit voltage |
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