Pb0.50Sr0.75Y0.70Ca0.25Cu1.70Oy单晶的磁阻研究

对低掺杂区非超导的Pb_(6.56)Sr_(?)Y_(?)Ca_(?)Cu_(?)O_y单晶样品进行了电阻和磁阻的测量,发现在低温下电阻温度关系遵从变程跳跃传导的R=R_(?)exp[(T_(?)/T)~(?)]的变化规律,这说明该样品处于强局域化区域.在低温下的磁阻为负并有明显的各向异性,这表明这类体系的磁阻主要来自于轨道效应的贡献,并且可能受到自旋-轨道散射的影响. 关键词：     

萘磺酸掺杂对纳米管结构聚苯胺低温电阻率的影响

通过研究用自组装法制备的萘磺酸掺杂的纳米管结构聚苯胺(苯胺与萘磺酸的摩尔比分别为1∶025,1∶05,1∶1,1∶2,1∶3)的电阻率温度依赖关系(测量温区为80—300K),仔细分析聚苯胺的结构形貌特征,提出了变程跳跃隧道穿透混合模型:认为在萘磺酸掺杂的纳米管结构聚苯胺样品中,跳跃和隧穿两种机制同时起作用,载流子沿纳米管传导是变程跳跃过程起主要作用,而载流子在纳米管之间的传导是隧穿过程起主要作用.实验结果表明,不同浓度的萘磺酸掺杂对样品的低温电阻率的影响很大,随着掺杂浓度增加,载流子传导所需克服的能垒C0迅速减小,当掺杂接近饱和时,C0不再减小.实验中还研究了不同形貌对电阻率的影响,结果表明样品中纳米管所占比例的增大有利于载流子传导 关键词： 聚苯胺 纳米管 低温电阻率     

Composites of nanotubular polyaniline containing Fe3O4 nanoparticles

Results of charge-transport and magnetic measurements of nanotubular polyaniline (PANI) composites containing Fe_3O_4 nanoparticles (～10nm) synthesized by a "template-free" method are reported. The T^{-1/2} resistivity has been observed, and dc magnetic susceptibility data are fitted to an equation χ=χ^*_P+C/T. With increasing weight ratio of Fe_3O_4, the electrical conductivity and temperature- independent susceptibility χ^*_P increase, and the Curie-type susceptibility is suppressed at low temperatures. Further discussions have been given. The PANI-H_3PO_4/Fe_3O_4 composite containing 27wt% of Fe_3O_4 nanoparticles is superparamagnetic, exhibiting very little hysteresis even at 5K.     

Bi2212晶须中磁通线运动临界电流的反常现象

我们对同一Ｂｉ２２１２晶须样品加不同方向的磁场,比较了Ｈ∥ｂ和Ｈ∥ｃ两种情况下的Ｉ－Ｖ曲线。我们发现,当Ｈ∥ｃ时,驱动磁通线运动的临界电流Ｉｃ与温度的关系遵循一般的单调地随温度上升而下降的关系。但是,当Ｈ∥ｂ时,Ｉｃ在Ｔ＾＊＝２５．５Ｋ附近出现了一个峰值：当Ｔ〉Ｔ＾＊时,Ｉｃ温度的下降而升高;Ｔ〈Ｔ＾＊时,Ｉｃ随温度的下降而下降。我们在文章中对此现象进行了讨论。     

Current--voltage characteristics of an individual helical CdS nanowire rope

This paper studies the electronic transport in an individual helically twisted CdS nanowire rope, on which platinum microleads are attached by focused-ion beam deposition. The current-voltage （I - V） characteristics are nonlinear from 300 down to 60 K. Some step-like structures in the I - V curves and oscillation peaks in the differential conductance （dI/dV - V） curves have been observed even at room temperature. It proposes that the observed behaviour can be attributed to Coulomb-blockade transport in the one-dimensional CdS nanowires with diameters of 6-10 nm.     

Hg0.9Tl0.2Ba2Ca2Cu3O8+δ在磁场下的热导

实验研究了高温超导体Hg0.9Tl0.2Ba2Ca2Cu3O8+δ的低温热导率与温度和磁场的关系,测量温度为7-20 K,外加磁场为0-6 T.结果表明,在不同外场下,超导体的热导率在实验温区内随温度的增加均单调增加;在固定的温度下外加磁场使超导体的热导率减小,并随外磁场的增加达到一个稳定值;热导的相对变化率κ(H)/κ(0)与磁场的关系以及热导率达到稳定值的磁场与测量温度有关.分析讨论了超导体中正常态电子在磁场下受磁通涡旋散射产生附加的热阻.     

A DEMONSTRATION OF 1×8 LINEAR ARRAY YBCO TRANSITION EDGE IR BOLOMETER

A high-T_c superconducting array microbolometer has been fabricated by using a YBCO film. Optical measurements gave moderate performance as individual detector, but singnificant improverment appears possible.     

ELECTRONIC STRUCTURE OF THE T*-TYPE SUPERCONDUCTORS (Bi0.5Sr1.5)(Y,Ce)2Cu2Oy STUDIED BY PHOTOELECTRON SPECTROSCOPY

The electronic structure of T^*-type compounds (Bi_0.5Sr_1.5)(Y_2-xCe_x)Cu₂O_y has been studied by X-ray photoelectron spectroscopy. From analysis of the results, it was found that cation deficiency in Ce⁴⁺ introduced holes to conduction planes in the T^* phase as in the p-type infinite layer compounds. Some Cu ions in the sample without cation-deficiency contained two-oxygen coordination, which resulted in the incompleteness of the CuO₂ sheets. Bi ions in the T^* phase cuprates take exact valence of 3_{+, Pb ions cannot replace them due to the too large an ionic radius of Pb²⁺/Pb⁴⁺.}     

Rectifying effect of heterojunction fabricated in freestanding thin film of polyaniline containing azobenzene side-chain

An innovative heterojunction is fabricated between two sides of a freestanding thin film of HCl-doped polyaniline (PANI) derivative containing azobenzene side-chain, which is synthesized through an N-alkyl-substituted reaction. Of the film, the side with being irradiated by UV light during preparation is represented as `A side'; the other side without being irradiated is represented as `N side'. The electrical properties of the heterojunction are measured and the rectifying effect is observed in the {current--voltage} characteristic curves with the values of rectifying ratio (γ) being 20 at ±0.06 V at T= 77K and 4 at ±0.02V at T=300 K separately.     

Sm1－xGdxA12低温下的磁性

分别测量了Sm1-xGdxAl2在低温下不同外加磁场时的电阻和磁化率.实验 结果表明，铁磁性物质Sm1-xGdxAl2在居里温度以下时，自旋磁矩和轨 道磁矩反平行有序排列，且对温度的依赖关系不同，导致在磁性抵消点出现自旋铁磁有序而 总磁矩为零的磁现象.并发现外加强磁场时自旋 轨道发生翻转. 关键词： Sm1-xGdxAl2 铁磁有序 自旋磁矩 轨道磁矩