Rectifying effect of heterojunctions between metals and doped conducting polymer nanostructure pellets

This paper reports that the Schottky junctions between low work function metals （e.g. Al and In） and doped semiconducting polymer pellets （e.g. polyaniline （PANI） microsphere pellet and polypyrrole （PPy） nanotube pellet） have been prepared and studied. Since Ag is a high work function metal which can make an ohmic contact with polymer, silver paste was used to fabricate the electrodes. The Al/PANI/Ag heterojunction shows an obvious rectifying effect as shown in I - V characteristic curves （rectifying ratio γ = 5 at ±6 V bias at room temperature）. As compared to the Al/PANI/Ag, the heterojunction between In and PANI （In/PANI/Ag） exhibits a lower rectifying ratio γ= 1.6 at ±2 V bias at room temperature. In addition, rectifying effect was also observed in the heterojunctions Al/PPy/Ag （γ = 3.2 at ±1.6 V bias） and In/PPy/Ag （γ = 1.2 at ±3.0 V bias）. The results were discussed in terms of thermoionic emission theory.     

Trap induced slow photoresponse of single CdS nanoribbons

Wurtzite CdS nanoribbons are prepared by using a simple thermal evaporation method. Electron microscopy shows that the ribbons are smooth in surface and uniform in size. Besides the intrinsic emission, the photoluminescence spectrum of a CdS nanoribbon shows a peak at about 580 nm, which may arise from the defect- and the trap- related transitions. The photoresponse of single CdS nanoribbons is researched. When these nanoribbons are exposed to a laser with a wavelength of 400 nm, their conductivity is enhanced greatly. The conductivity of CdS nanoribbons cannot be restored to a value without any illumination even at 5 minutes after the illumination. A model is proposed to explain this phenomenon, which may be due to a slow photoresponse induced by the trap.     

Electrical characteristics and optoelectronic properties of metal--semiconductor--metal structure with zinc oxide nanowires across Au electrodes

This paper reports on a method of assembling semiconducting ZnO nanowires onto a pair of Au electrodes to construct a metal--semiconductor metal （MSM） structure by dieleetrophoresis and studying on its electrical characteristics by using current-voltage （Ⅰ - Ⅴ） measurements. An electronic model with two back to back Sehottky diodes in series with a semiconductor of nanowires was established to study the electrical transport of the MSM structures. By fitting the measured Ⅰ - Ⅴ characteristics using the proposed model, the parameters of the Schottky contacts and the resistance of nanowires could be acquired. The photoelectric properties of the MSM structures were also investigated by analysing the measurements of the electrical transports under various light intensities. The deduced results demonstrate that ZnO nanowires and their Schottky contacts with Au electrodes both contribute to photosensitivity and the MSM structures with ZnO nanowires are potentially applicable for photonic devices.     

Ultraviolet and visible upconversion dynamics in Er^3＋：YAlO3 under ^2H11/2 excitation

The luminescence of Er^3＋：YAlO3 in ultraviolet visible and infrared ranges under the 518 nm excitation of the multiples ^2H11/2 have been investigated. Ultraviolet （275 nm and 318 nm）, violet （405 nm and 413 nm） and blue （474 nm） upconversion and infrared downconversion luminescence has been observed. By means of measuring the fluorescence decay curves and using the theory of rate equations, the luminescence kinetics was studied in detail and the processes of energy transfer upconversion （ETU） and excitation state absorption （ESA） were proposed to explain the upconversion phenomena.     

Growth of n-type ZnO thin films by using mixture gas of hydrogen and argon

High-quality oxide semiconductor ZnO thin films were prepared on single-crystal sapphire and LaAlOZnO薄膜 氩氢混合气体 薄膜生长 异质结构 薄膜物理学ZnO, PLD, heterostructureProject supported by the National Natural Science Foundation of China (Grant No 19974001) and the National Key Basic Research Special Foundation of China (Grant No NKBRSF G1999064604 and G2000036505).2005-05-309/3/2005 12:00:00 AMHigh-quality oxide semiconductor ZnO thin films were prepared on single-crystal sapphire and baAlO3 substrates by pulsed laser deposition （PLD） in the mixture gas of hydrogen and argon. Low resistivity n-type ZnO thin films with smoother surface were achieved by deposition at 600℃ in 1Pa of the mixture gas. in addition, ferromagnetism was observed in Co-doped ZnO thin films and rectification Ⅰ - Ⅴ curves were found in p-GaN/n-ZnO and p-CdTe/n-ZnO heterostructure junctions. The results indicated that using mixture gas of hydrogen and argon in PLD technique was a flexible method for depositing high-quality n-type oxide semiconductor films, especially for the multilayer thin film devices.     

Observation of a diverse deviation from macropore-formation theory in silicon electrochemistry

Via anodizing patterned and unpatterned samples with a high HF concentration （[HF]）, the degree of deviation from pore-formation theory was found to be markedly different. Based on the analysis of scanning electron microscope （SEM） micrographs and current-voltage （I - V） curves, the variation of physical and chemical parameters of patterned and unpatterned substrates was found to be crucial to the understanding of the observations. Our results indicate that the initial surface morphology of samples can have a considerable influence upon pore formation. The electric-field effect as well as current-burst-model was employed to interpret the underlying mechanism.     

Enhancing low-field magnetoresistance of La0.67Ca0.33MnO3 films deposited on anodized aluminium-oxide membranes

In this paper we report a new method to fabricate nanostructured films, La0.67Ca0.33MnO3 （LCMO） nanostructured films have been fabricated by using pulsed electron beam deposition （PED） on anodized aluminium oxide （AAO） membranes, The magnetic and electronic transport properties are investigated by using the Quantum Design physics properties measurement system （PPMS） and magnetic properties measurement system （MPMS）. The resistance peak temperature （Tp） is about 85 K and the Curie temperature （To） is about 250 K for the LCMO film on an AAO membrane with a pore diameter of 20nm. Large magnetoresistance ratio （MR） is observed near Tp. The MR is as high as 85% under 1 T magnetic field. The great enhancement of MR at low magnetic fields could be attributed to the lattice distortion and the grain boundary that are induced by the nanopores on the AAO membrane.     

Low temperature ferromagnetic properties of CdS and CdTe thin films

The magnetic property in a material is induced by the unpaired electrons. This can occur due to defect states which can enhance the magnetic moment and the spin polarization. In this report, CdS and CdTe thin films are grown on FTO glass substrates by chemical bath deposition and close-spaced sublimation, respectively. The magnetic properties, which are introduced from oxygen states, are found in CdS and CdTe thin films. From the hysteresis loop of magnetic moment it is revealed that CdS and CdTe thin films have different kinds of magnetic moments at different temperatures. The M–H curves indicate that from 100 K to 350 K, CdS and CdTe thin films show paramagnetism and diamagnetism, respectively.A superparamagnetic or a weakly ferromagnetic response is found at 5 K. It is also observed from ZFC/FC curves that magnetic moments decrease with temperature increasing. Spin polarized density functional calculation for spin magnetic moment is also carried out.     

Lasing characteristics and growth of CdS epitaxial thin-films excited by second harmonic Nd: YAG laser radiation at 473 nm

The first experimental study on CdS epitaxial thin-film lasers with ZnS substrates is reported. For the first time single crystal layers of CdS have been grown on the (111) faces of ZnS substrate by the hydrogen transport method. Laser emission at 491.8 nm has been observed from these layers cooled near liquid-nitrogen temperature. Optical pumping is performed by the second harmonic of a Q-switched Nd: YAG laser operated at 473 nm, the energy of which exceeds slightly the band-gap energy of the cooled epitaxial CdS layer. The measured optical gain for these CdS thin-films compared with that for platelet CdS single crystals reveals that the optical confinement inside the epitaxial layer increases the optical gain by a factor of about two.     

Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator

In the present work, a Cz-Silicon wafer is implanted with helium ions to produce a buried porous layer, and then thermally annealed in a dry oxygen atmosphere to make oxygen transport into the cavities. The formation of the buried oxide layer in the case of internal oxidation （ITOX） of the buried porous layer of cavities in the silicon sample is studied by positron beam annihilation （PBA）. The cavities are formed by 15 keV He implantation at a fluence of 2×10^16 cm^-2 and followed by thermal annealing at 673 K for 30 min in vacuum. The internal oxidation is carried out at temperatures ranging from 1073 to 1473 K for 2 h in a dry oxygen atmosphere. The layered structures evolved in the silicon are detected by using the PBA and the thicknesses of their layers and nature are also investigated. It is found that rather high temperatures must be chosen to establish a sufficient flux of oxygen into the cavity layer. On the other hand high temperatures lead to coarsening the cavities and removing the cavity layer finally.     

Two-step annealed CdS/CdSe co-sensitizers for quantum dot-sensitized solar cells

CdS/CdSe co-sensitizers on TiO₂ films were annealed using a two-step procedure; high temperature (300 °C) annealing of TiO₂/CdS quantum dots (QDs), followed by low temperature (150 °C) annealing after the deposition of CdSe QDs on the TiO₂/CdS. For comparison, two types of films were prepared; CdS/CdSe-assembled TiO₂ films conventionally annealed at a single temperature (150 or 300 °C) and non-annealed films. The 300 °C-annealed TiO₂/CdS/CdSe showed severe coalescence of CdSe QDs, leading to the blocked pores and hindered ion transport. The QD-sensitized solar cell (QD-SSC) with the 150 °C-annealed TiO₂/CdS/CdSe exhibited better overall energy conversion efficiency than that with the non-annealed TiO₂/CdS/CdSe because the CdSe QDs annealed at a suitable temperature (150 °C) provided better light absorption over long wavelengths without the hindered ion transport. The QD-SSC using the two-step annealed TiO₂/CdS/CdSe increased the cell efficiency further, compared to the QD-SSC with the 150 °C-annealed TiO₂/CdS/CdSe. This is because the 300 °C-annealed, highly crystalline CdS in the two-step annealed TiO₂/CdS/CdSe improved electron transport through CdS, leading to a significantly hindered recombination rate.     

Preferential magnetic nanoparticle uptake by bone marrow derived macrophages sub-populations: effect of surface coating on polarization,toxicity, and in vivo MRI detection

For the first time, we report the successful application of inhouse synthesized CdS quantum dots (QDs) with particle sizes between 1 and 7 nm exhibiting excellent fungicidal activity based on the interactions with Saccharomyces cerevisiae and Candida utilis. The growth curves and the growth rates of both fungi were established in the presence of three varying concentrations of CdS QDs. It was observed that the CdS QDs were highly inhibitory even at the lowest concentration of 10 mg/L used in this study, while the untreated control cells followed a normal growth pattern in the cases of both Saccharomyces and Candida. MALDI-MS was applied to substantiate the observations obtained by direct cell count method. It was observed that the trend observed in the case of Saccharomyces and Candida was well-represented in the MALDI-MS spectra. This study proposes a mechanism for the first time based on MALDI-MS results, that the CdS QDs interact with the extracellular polymeric substances (EPS) and remove small molecules from EPS layer; on the other hand, it was observed that CdS QDs at all concentrations lead to enrichment of protein signals in MALDI-MS. We have substantiated these results by quantifying the EPS in the control and treated cells and also using TEM to further confirm the results.     

Nonlinear optical properties of [（CH3）4N]Au（dmit）2 using Z-scan technique

The third-order optical nonlinearities of [（CH3）4N]Au（dmit）2 （dmit = 4,5-dithiolate-1,3-dithiole-2-thione） at 532 nm and 1064 nm are investigated using the Z-scan technique with pulses of picoseconds duration. The Z-scan spectra reveal a strong nonlinear absorption （reverse saturable absorption） and a negative nonlinear refraction at 532 nm. No nonlinear absorption is observed at 1064 nm. The molecular second-order hyperpolarizability γ for the [（CH3）4N]Au（dmit）2 molecule at 532nm is estimated to be as high as （2.1 ±0.1） × 10^-31 esu, which is nearly three times larger than that at 1064 nm. The mechanism responsible for the difference between the results is analysed. Nonlinear transmission measurements suggest that this material has potential applications in optical limiting.     

Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy

This paper reports that the GaN thin films with Ga-polarity and high quality were grown by radio-frequency molecular beam epitaxy on sapphire （0001） substrate with a double A1N buffer layer. The buffer layer consists of a high-temperature （HT） A1N layer and a low-temperature （LT） A1N layer grown at 800℃ and 600℃, respectively. It is demonstrated that the HT-A1N layer can result in the growth of GaN epilayer in Ga-polarity and the LT-A1N layer is helpful for the improvement of the epilayer quality. It is observed that the carrier mobility of the GaN epilayer increases from 458 to 858cm^2/V.s at room temperature when the thickness of LT-A1N layer varies from 0 to 20nm. The full width at half maximum of x-ray rocking curves also demonstrates a substantial improvement in the quality of GaN epilavers by the utilization of LT-A1N layer.     

Effect of CdS modification on photoelectric properties of TiO2/PbS quantum dots bulk heterojunction

TiO₂/PbS(CdS) quantum dots (QDs) bulk heterojunction has been fabricated by successive ionic layer adsorption and reaction method via alternate deposition of PbS and CdS QDs. In comparison with TiO₂/PbS heterojunction, the incident photon to current conversion efficiency was increased almost 50% in the visible region. Meantime, the short-circuit current and open-circuit voltage were enhanced 200% and 35% respectively. The influence mechanism of CdS is related to reduction of trap state density at TiO₂/PbS interface and PbS QDs surface by the discussion of the dark current density–voltage curves, the transient photocurrent response curves and the electrochemical impedance spectra spectroscopy (EIS).     

Electronic and luminescent properties of Cr-doped cadmium sulfide nanowires

Cr-doped CdS nanowires were synthesized in large scale through thermal co-evaporation of CdS and metal Cr powders. General morphology, detailed microstructure and optical properties were characterized using various techniques. Devices consisting of individual Cr-doped CdS nanowire were fabricated and they exhibited remarkable rectifying characteristics. I-V curves of individual Cr-doped CdS nanowire devices demonstrate that the present nanowires are n-type doped and have high conductivity (10.96 \Omega ^-1cm^-1, indicating great potential applications in nanoscale electronic and optoelectronic devices.     

在SiO2分子筛内CdS纳米晶的内延生长及特性研究

近年来,国际上纳米材料科学及其应用的研究非常活跃.纳米材料的尺寸效应和面效应与体材料相比有特殊的物理和化学特性,尤其是它的界面效应更为明显,因而米材料作为一种新兴的材料,受到了广泛的重视.但到目前为止,纳米材料的制备大采用化学合成的方法如悬胶法、凝胶-溶胶法等,而利用这些方法制备的纳米材料通常一定的尺寸分布,这主要是由于纳米材料在一定温度和时间下的凝结和分解等原因造的[1],因而严重地影响了纳米材料在各方面的特性.     

PM567-Doped solid dye lasers based on PMMA

Polymers are a kind of attractive hosts for laser dyes due to their high transparency in both pumping and lasing ranges and superior optical homogeneity. In this paper solid dye samples based on polymethyl methacrylate (PMMA) doped with different concentrations of 1, 3, 5, 7, 8 -pentamethyl-2, 6-diethylpyrromethene-BF$_{2 }$ (PM567) are prepared. The absorption, fluorescence and lasing spectra of the samples are obtained. Wide absorption and fluorescence bands are obtained and a red shift of the maxima of the lasing emission spectra is observed. With the second-harmonic generation of Q-switched Nd:YAG laser (532\,nm, $\sim $20\,ns) pumping the samples longitudinally, the slope efficiencies of the samples are obtained. There is an optimal dye concentration for the highest slope efficiency when the pumping energy is lower than some typical value ($\sim $250\,mJ), and the highest slope efficiency 35.6{\%} is obtained in the sample with a dye concentration of $2\times10^{ - 4}$\,mol/L. Pumping the samples at a rate of 10Hz with a pulse energy as high as 200\,mJ (the fluence is 0.2\,J/cm$^{2})$, the output energy drops to one-half of its initial value after approximate 15500 pulses and the normalized photostability is 5.17\,GJ/mol. A kind of solid dye laser which could have some applications is built.     

Torsion induced circular dichroism in hexagonal CdS

The influence of the torsion on the absorption properties of hexagonal CdS has been studied in our experiments. The undeformed CdS does not possess circular dichroism (CD) but it manifests linear dichroism (LD). An appearance of CD and a change of LD can be observed in the torsion deformed CdS crystals. The mentioned absorption phenomena occur in the vicinity of the isotropic point (i.p.), the crossing point of the curves of the refractive indicesn ₀() andn _e (). The sign of CD is connected with the direction of the torsional momentM. The magnitude ofM influences the shape of CD spectra as well as the values of LD. The appearance of CD and the change of LD are explained by the torsion induced gyrotropy in the CdS crystals, i.e. by the created chirality in the hexagonal CdS.     

Magnetic properties and magnetic entropy changes of La1-xPrxFe11.5Si1.5 compounds with 0≤x≤ 0.5

Magnetic properties and magnetic entropy changes in LaFe$_{11.5}$Si$_{1.5}$ have been investigated by partially substituting Pr by La. It is found that La$_{1 - x}$Pr$_{x}$Fe$_{11.5}$Si$_{1.5}$ compounds remain cubic NaZn$_{13}$-type structures even when the Pr content is increased to 0.5, i.e. $x = 0.5$. Substitution of Pr for La leads to a reduction in both the crystal constant and the Curie temperature. A stepwise magnetic behaviour in the isothermal magnetization curves is observed, indicating that the characteristic of the itinerant electron metamagnetic (IEM) transition above $T_{\rm C}$ becomes more prominent with the Pr content increasing. As a result, the magnetic entropy change is remarkably enhanced from 23.0 to 29.4\,J/kg$\cdot$K as the field changes from 0 to 5\,T, with the value of $x$ increasing from 0 to 0.5. It is more attractive that the magnetic entropy changes for all samples are shaped into high plateaus in a wide range of temperature, which is highly favourable for Ericsson-type magnetic refrigeration.