悬空石墨烯对其表面金纳米膜形貌的影响

石墨烯与金属间的相互作用是石墨烯器件研究中的关键问题之一,其涉及石墨烯器件的电学接触、锂离子电池石墨烯电极、石墨烯金属光学等方面.本文重点研究了不同层数的悬空石墨烯表面金纳米膜退火前后的形貌演化过程,观测到两个重要的现象:1)排除基底影响后的悬空石墨烯层数可以通过金纳米膜的形貌特征进行确认,但其随层数的变化趋势与有基底支撑的石墨烯正好相反;2)退火处理后的悬空石墨烯上的金纳米膜形貌演化过程具有类似水滴在荷叶上的行为.对悬空石墨烯表面金属纳米膜在退火前后的形貌变化规律及其现象背后的物理机理进行了详细的讨论和理论解释.     

Intrinsic charge transport behaviors in graphene-black phosphorus van der Waals heterojunction devices

Heterostructures from mechanically-assembled stacks of two-dimensional materials allow for versatile electronic device applications. Here, we demonstrate the intrinsic charge transport behaviors in graphene-black phosphorus heterojunction devices under different charge carrier densities and temperature regimes. At high carrier densities or in the ON state,tunneling through the Schottky barrier at the interface between graphene and black phosphorus dominates at low temperatures. With temperature increasing, the Schottky barrier at the interface is vanishing, and the channel current starts to decrease with increasing temperature, behaving like a metal. While at low carrier densities or in the OFF state, thermal emission over the Schottky barrier at the interface dominates the carriers transport process. A barrier height of ~67.3 meV can be extracted from the thermal emission-diffusion theory.     

Three-dimensional vertical ZnO transistors with suspended top electrodes fabricated by focused ion beam technology

Three-dimensional(3D)vertical architecture transistors represent an important technological pursuit,which have distinct advantages in device integration density,operation speed,and power consumption.However,the fabrication processes of such 3D devices are complex,especially in the interconnection of electrodes.In this paper,we present a novel method which combines suspended electrodes and focused ion beam(FIB)technology to greatly simplify the electrodes interconnection in 3D devices.Based on this method,we fabricate 3D vertical core-double shell structure transistors with ZnO channel and Al₂O₃ gate-oxide both grown by atomic layer deposition.Suspended top electrodes of vertical architecture could be directly connected to planar electrodes by FIB deposited Pt nanowires,which avoid cumbersome steps in the traditional 3D structure fabrication technology.Both single pillar and arrays devices show well behaved transfer characteristics with an Ion/Ioff current ratio greater than 106 and a low threshold voltage around 0 V.The ON-current of the 2×2 pillars vertical channel transistor was 1.2μA at the gate voltage of 3 V and drain voltage of 2 V,which can be also improved by increasing the number of pillars.Our method for fabricating vertical architecture transistors can be promising for device applications with high integration density and low power consumption.     

微纳米加工技术在纳米物理与器件研究中的应用

物质在纳米尺度下可能呈现出与体材料不同的物理特件，这正是纳米科技发展的基础之一。要想探索在纳米尺度下材料物埋性质的变化规律及可能的应用领域，离不开相应的技术手段，微纳米加工技术作为当今高技术发展的重要技术领域之一，是实现功能人工纳米结构与器件微纳米化的基础。本文根据几个不同的应用领域，介绍了微纳米加工技术在纳米物理与器件研究领域的应用。     

金镍复合膜上碳纳米管的定向生长及生长过程中金的作用

以金镍复合膜作催化剂，在96%的高氢气浓度下实现了碳纳米管的定向生长，并对其生长过 程进行了深入探讨.结果表明，高氢气浓度下碳纳米管生长的实现与本实验所选用的催化剂 ——金镍复合膜有密切关系.催化剂中金的参与，促进了碳在催化剂中的扩散，提高了碳在 催化剂中的活度.与催化剂中没有金的情况相比较，金的参与有利于镍吸收气氛中的碳，从 而使镍更容易达到碳饱和，有利于在高的氢气浓度下实现碳纳米管的定向生长. 关键词： 金镍复合膜 高氢气浓度 原子氢 碳活度     

金刚石膜的厚度及背表面过渡层对热导率的影响

 采用微波等离子体化学气相沉积（MWPCVD）方法制备金刚石膜，研究了金刚石膜的厚度以及生长初期的SiC过渡层对其热导率的影响，给出了膜厚和背表面SiC过渡层减薄厚度与金刚石膜热导率的关系。     

碳纳米管的变温场发射

考察了温度变化对沉积在钨丝针尖上的碳纳米管场发射的影响，发现碳纳米管场发射电流随温度升高而增大，场发射电流的稳定性基本没有变化. 多根碳纳米管的场发射特性随温度变化出现偏离Fowler-Nordheim理论的现象，这种现象可能来自碳纳米管的不均匀性.     

溴化四-(4-N,N,N-二甲基,正庚烷基氨基苯基)卟啉钴的合成,L-B膜及其气敏、湿敏特性

卟啉和酞菁是一类大环共轭化合物,由于其结构和性能以及在生命科学中所起的作用,使得用L-B膜技术研究其结构和功能越来越引起人们的重视.自从Jones等发现原卟啉L-B膜具有较好的光导性以来,卟啉L-B膜的电导性和气体敏感特性相继有人进行过研究。发现卟啉铜L-B膜对二氧化氮有很高的敏感性,而且有良好的选择性.人工合成的     

Current--voltage characteristics of an individual helical CdS nanowire rope

This paper studies the electronic transport in an individual helically twisted CdS nanowire rope, on which platinum microleads are attached by focused-ion beam deposition. The current-voltage （I - V） characteristics are nonlinear from 300 down to 60 K. Some step-like structures in the I - V curves and oscillation peaks in the differential conductance （dI/dV - V） curves have been observed even at room temperature. It proposes that the observed behaviour can be attributed to Coulomb-blockade transport in the one-dimensional CdS nanowires with diameters of 6-10 nm.