排序方式: 共有91条查询结果,搜索用时 15 毫秒
61.
Short period InAs(4ML)/GaSb(SML) superlattices (SLs) with InSb- and mixed-like (or Ga1-xInxAs1-ySby- like) interfaces (IFs) are grown by molecular-beam epitaxy (MBE) on (001) GaSh substrates at optimized growth temperature. Raman scattering reveals that two kinds of IFs can be formed by controlling shutter sequences. X-ray diffraction (XRD) and atomic force microscopy (AFM) demonstrate that SLs with mixed-like IFs are more sensitive to growth temperature than that with InSb-like IFs. The photoluminescence (PL) spectra of SLs with mixed-like IFs show a stronger intensity and narrower line width than with InSb-like IFs. It is concluded that InAs/GaSb SLs with mixed-like IFs have better crystalline and optical properties. 相似文献
62.
We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using AlSb buffer layers. Optimization of AlSb growth parameter is aimed at obtaining high GaSh crystal quality and smooth GaSh surface. The optimized growth temperature and thickness of AlSb layers are found to be 450℃ and 2.1 nm, respectively. A rms surface roughness of 0.67 nm over 10 × 10 μm^2 is achieved as a 0.5 μm GaSh film is grown under optimized conditions. 相似文献
63.
64.
Extremely low density InAs quantum dots (QDs) are grown by molecular beam droplet epitaxy. The gallium deposition amount is optimized to saturate exactly the excess arsenic atoms present on the GaAs substrate surface during growth, and low density InAs/GaAs QDs (4× 10^6 cm^-2) are formed by depositing 0.65 monolayers (MLs) of indium. This is much less than the critical deposition thickness (1.7 ML), which is necessary to form InAs/GaAs QDs with the conventional Stranski-Krastanov growth mode. The narrow photoluminescence linewidth of about 24 meV is insensitive to cryostat temperatures from IO K to 250K. All measurements indicate that there is no wetting layer connecting the QDs. 相似文献
65.
We have obtained the parameter-phase diagram, which unambiguously defines the parameter region for the use of InAs/GaAs quantum
dot as two-level quantum system in quantum computation in the framework of the effective-mass envelope function theory. Moreover,
static electric field is found to efficiently prolong decoherence time. As a result, decoherence time may reach the order
of magnitude of milli-seconds as external static electric field goes beyond 20 kV/cm if only vacuum fluctuation is taken as
the main source for decoherence. Our calculated results are useful for guiding the solid-state implementation of quantum computing. 相似文献
66.
结合垂直腔面发射激光器(VCSEL)原理以及量子点增益特点,计算了有源层p掺杂结构的量子点VCSEL的材料增益和3 dB带宽,发现p掺杂结构可以大大提高频率特性.结合VCSEL激射条件和阈值特性,分析了对VCSEL结构的要求;分析了分布参数对频率特性的影响,对其外部封装提出了要求.设计了高频率响应的含氧化限制层的1.3 μm量子点VCSEL结构.
关键词:
量子点
垂直腔面发射激光器
微分增益
3 dB带宽 相似文献
67.
High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth 下载免费PDF全文
We develop a modified two-step method of growing high-density and
narrow size-distribution InAs/GaAs quantum dots (QDs) by molecular
beam epitaxy. In the first step, high-density small InAs QDs are
formed by optimizing the continuous deposition amount. In the second
step, deposition is carried out with a long growth interruption for
every 0.1 InAs monolayer. Atomic force microscope images show that
the high-density ($\sim $5.9$\times $10$^{10}$\,cm$^{ - 2})$ good
size-uniformity InAs QDs are achieved. The strong intensity and
narrow linewidth (27.7\,meV) of the photoluminescence spectrum show
that the QDs grown in this two-step method have a good optical
quality. 相似文献
68.
Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs(311) A Substrate by molecular eam epitaxy 下载免费PDF全文
Atomic hydrogen assisted molecular beam epitaxy (MBE) is a novel type of epitaxial growth of nanostructures. The GaAs (311)A surface naturally forms one-dimensional step arrays by step bunching along the direction of 〈-233〉 and the space period is around 40nm. The step arrays extend over several μm without displacement. The InGaAs quantum wire arrays are grown on the step arrays as the basis. Our results may prompt further development of more uniform quantum wire and quantum dot arrays. 相似文献
69.
This paper studies the size dependence of biexciton binding energy
in single quantum dots (QDs) by using atomic force microscopy and
micro-photoluminescence measurements. It finds that the biexciton
binding energies in the QDs show ``binding' and ``antibinding'
properties which correspond to the large and small sizes of QDs,
respectively. The experimental results can be well interpreted by
the biexciton potential curve, calculated from the exciton molecular
model and the Heitler--London method. 相似文献
70.
Top-illuminated metamorphic InGaAs p-i-n photodetectors (PDs) with 50% cut-off wavelength of 1.75 μm at room temperature are fabricated on GaAs substrates. The PDs are grown by a solid-source molecular beam epitaxy system. The large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual InP substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. The dark current densities are typically 5 × 10^-6 A/cm^2 at 0 V bias and 2.24 × 10^-4 A/cm^2 at a reverse bias of 5 V. At a wavelength of 1.55 μm, the PDs have an optical responsivity of 0.48 A/W, a linear photoresponse up to 5 mW optical power at -4 V bias. The measured -3 dB bandwidth of a 32 μm diameter device is 7 GHz. This work proves that InGaAs buffer layers grown by solid source MBE are promising candidates for GaAs-based long wavelength devices. 相似文献