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1.
半导体带间级联量子阱是实现3~5μm波段中红外激光器的重要前沿,其在半导体光电器件技术、气体检测、医学医疗以及自由空间光通信等诸多领域具有重要科学意义和应用价值。半导体带间级联量子阱发光机理是以二类量子阱中的电子与空穴的带间辐射复合发光为主导,再通过电子注入区与空穴注入区形成级联放大,实现多个量子阱周期内电子与空穴的重复利用。本文综述了半导体带间级联激光器从提出能带结构、外延材料到器件制备技术的发展历程,剖析了器件结构各功能区基本概念和工作原理,介绍了器件结构设计与制备工艺技术难点的里程碑突破,详细解释了载流子再平衡、分别限制层等设计,最后展望了半导体带间级联激光器的发展方向和趋势。  相似文献   
2.
近年来InAs/GaSb二类超晶格红外探测器在材料晶体结构生长、器件结构设计与成像应用方面取得了飞速发展。尤其在多色红外探测方面,二类超晶格材料以其具备的带隙可调、暗电流小、量子效率高、材料均匀性高,以及成本低等优越性能,使其逐步成为第三代红外焦平面探测器的优选材料。本文阐述了锑化物窄带隙半导体研究中心的锑化物多色红外探测器研究进展。本团队成功实现了低噪声、高量子效率以及低光学串扰的短/中、短/长、中/长、长/长、中/长/甚长波等多种高性能多色红外探测器研制。  相似文献   
3.
The eight-band κ·p model is used to establish the energy band structure model of the type-II InAs/GaSb superlattice detectors with a cut-off wavelength of 10.5μm,and the best composition of M-structure in this type of device is calculated theoretically.In addition,we have also experimented on the devices designed with the best performance to investigate the effect of the active region p-type doping temperature on the quantum efficiency of the device.The results show that the modest active region doping temperature(Be:760℃)can improve the quantum efficiency of the device with the best performance,while excessive doping(Be:>760℃)is not conducive to improving the photo response.With the best designed structure and an appropriate doping concentration,a maximum quantum efficiency of 45% is achieved with a resistance-area product of 688?·cm^2,corresponding to a maximum detectivity of 7.35×10^11cm·Hz^1/2/W.  相似文献   
4.
InAs/GaSb superlattice (SL) short wavelength infrared photoconduction detectors are grown by molecular beam epitaxy on GaAs(O01) semi-insulating substrates. An interfacal misfit mode AISb quantum dot layer and a thick GaSb layer are grown as buffer layers. The detectors containing a 200-period 2 ML/S ML InAs/GaSb SL active layer are fabricated with a pixel area of 800×800 μm^2 without using passivation or antirefleetion coatings. Corresponding to the 50% cutoff wavelengths of 2.05μm at 77K and 2.25 μm at 300 K, the peak detectivities of the detectors are 4 × 10^9 cm·Hz^1/2/W at 77K and 2 × 10^8 cm·Hz1/2/W at 300K, respectively.  相似文献   
5.
We investigate the molecular beam epitaxy growth of metamorphic InxGal-xAs materials (x up to 0.5) on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical qualdty. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content (55%) InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.  相似文献   
6.
Xue-Yue Xu 《中国物理 B》2022,31(6):68503-068503
The etching and passivation processes of very long wavelength infrared (VLWIR) detector based on the InAs/GaSb/AlSb type-II superlattice have been studied. By studying the effect of each component in the citric acid solution (citric acid, phosphoric acid, hydrogen peroxide, deionized water), the best solution ratio is obtained. After comparing different passivation materials such as sulfide + SiO2, Al2O3, Si3N4 and SU8, it is found that SU8 passivation can reduce the dark current of the device to a greater degree. Combining this wet etching and SU8 passivation, the R0A of VLWIR detector with a mesa diameter of 500 μm is about 3.6 Ω ·cm2 at 77 K.  相似文献   
7.
王红培  王广龙  倪海桥  徐应强  牛智川  高凤岐 《物理学报》2013,62(19):194205-194205
针对量子点场效应单光子探测器(QDFET)光吸收效率低下的问题, 提出了一种新型量子点场效应增强型单光子探测器(QDFEE-SPD). QDFEE-SPD增加了共振腔的设计, 并采用了GaAs/AlAs多层膜作为下反射镜; 对QDFEE-SPD的光吸收增强效应和光响应度进行了理论分析和模拟, 结果表明, 与没有共振腔时相比, QDFEE-SPD的吸收效率和光相应度都有了大幅度的提升, 同时为了光吸收的最优化, 吸收层厚度一般应在0.1–0.5 μm; 对QDFEE-SPD的材料样品进行了生长和测试实验, 反射谱测试和PL谱测试结果表明, QDFEE-SPD对入射光的吸收具有了明显的增强效应. 文章成果为高效率量子点场效应单光子探测技术的研究提供了新的思路. 关键词: QDFEE-SPD 共振腔 吸收效率 光吸收增强效应  相似文献   
8.
The GaSb-based laser shows its superiority in the 3–4 μm wavelength range. However, for a quantum well(QW) laser structure of InGaAsSb/AlGaInAsSb multiple-quantum well(MQW) grown on GaSb, uniform content and high compressive strain in InGaAsSb/AlGaInAsSb are not easy to control. In this paper, the influences of the growth temperature and compressive strain on the photoluminescence(PL) property of a 3.0-μm InGaAsSb/AlGaInAsSb MQW sample are analyzed to optimize the growth parameters. Comparisons among the PL spectra of the samples indicate that the In0.485GaAs0.184Sb/Al0.3Ga0.45In0.25As0.22Sb0.78MQW with 1.72% compressive strain grown at 460 C posseses the optimum optical property. Moreover, the wavelength range of the MQW structure is extended to 3.83 μm by optimizing the parameters.  相似文献   
9.
The GaSb-based laser shows its superiority in the 3-4 ~tm wavelength range. However, for a quantum well (QW) laser structure of InGaAsSb/AIGaInAsSb multiple-quantum well (MQW) grown on GaSb, uniform content and high com- pressive strain in InGaAsSb/A1GaInAsSb are not easy to control. In this paper, the influences of the growth tempera- ture and compressive strain on the photoluminescence (PL) property of a 3.0μm lnGaAsSb/A1GaInAsSb MQW sample are analyzed to optimize the growth parameters. Comparisons among the PL spectra of the samples indicate that the Ino.485GaAso.184Sb/Alo.3Gao.45Ino.25Aso.22Sbo.78 MQW with 1.72% compressive strain grown at 460 ~C posseses the op- timum optical property. Moreover, the wavelength range of the MQW structure is extended to 3.83 μm by optimizing the parameters.  相似文献   
10.
A bilayer stacked InAs/GaAs quantum dot structure grown by molecular beam epitaxy on an In0.05Ga0.95As metamorphic buffer is investigated. By introducing a InGaAs:Sb cover layer on the upper InAs quantum dots (QDs) layers, the emission wavelength of the QDs is extended successfully to 1.533 μm at room temperature, and the density of the QDs is in the range of 4× 10^9-8 ×10^9cm^-2. Strong photoluminescence (PL) intensity with a full width at half maximum of 28.6meV of the PL spectrum shows good optical quality of the bilayer QDs. The growth of bilayer QDs on metamorphic buffers offers a useful way to extend the wavelengths of GaAs-based materials for potential applications in optoeleetronic and quantum functional devices.  相似文献   
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