| Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs（311） A Substrate by molecular eam epitaxy |
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| 引用本文： | 周大勇,澜清,孔云川,苗振华,封松林,牛智川.Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs（311） A Substrate by molecular eam epitaxy[J].中国物理 B,2003,12(2):218-221. |
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| 作者姓名： | 周大勇 澜清 孔云川 苗振华 封松林 牛智川 |
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| 作者单位： | State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| 基金项目： | Project supported by the National Science Foundation of China (Grant Nos 60176006 and 60025410) and by the Nano Science and Technology Project of Chinese Academy of Sciences. |
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| 摘 要： | Atomic hydrogen assisted molecular beam epitaxy (MBE) is a novel type of epitaxial growth of nanostructures. The GaAs (311)A surface naturally forms one-dimensional step arrays by step bunching along the direction of 〈-233〉 and the space period is around 40nm. The step arrays extend over several μm without displacement. The InGaAs quantum wire arrays are grown on the step arrays as the basis. Our results may prompt further development of more uniform quantum wire and quantum dot arrays.
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| 关 键 词： | 砷化镓 量子导线 分子束外延生长 |
| 收稿时间： | 2002-05-16 |
| 修稿时间： | 7/8/2002 12:00:00 AM |
Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy |
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| Zhou Da-Yong,Lan Qing,Kong Yun-Chuan,Miao Zhen-Hu,Feng Song-Lin and Niu Zhi-Chuan.Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy[J].Chinese Physics B,2003,12(2):218-221. |
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| Authors: | Zhou Da-Yong Lan Qing Kong Yun-Chuan Miao Zhen-Hu Feng Song-Lin and Niu Zhi-Chuan |
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| Affiliation: | State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | Atomic hydrogen assisted molecular beam epitaxy (MBE) is a novel type of epitaxial growth of nanostructures. The GaAs (311)A surface naturally forms one-dimensional step arrays by step bunching along the direction of 〈-233〉 and the space period is around 40nm. The step arrays extend over several μm without displacement. The InGaAs quantum wire arrays are grown on the step arrays as the basis. Our results may prompt further development of more uniform quantum wire and quantum dot arrays. |
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| Keywords: | molecular beam epitaxy (MBE) step bunching InGaAs quantum wire |
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