| High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth |
| |
| 作者姓名： | 黄社松 牛智川 詹锋 倪海桥 赵欢 吴东海 孙征 |
| |
| 作者单位： | State Key Laboratory for Superlattices and
Microstructures, Institute of Semiconductors,\Chinese Academy of
Sciences, Beijing 100083, China;State Key Laboratory for Superlattices and
Microstructures, Institute of Semiconductors,\Chinese Academy of
Sciences, Beijing 100083, China;The Key Laboratory of Beam Technology and Material
Modification of Ministry of Education,\Beijing Normal University,
Beijing 100875, China;State Key Laboratory for Superlattices and
Microstructures, Institute of Semiconductors,\Chinese Academy of
Sciences, Beijing 100083, China;State Key Laboratory for Superlattices and
Microstructures, Institute of Semiconductors,\Chinese Academy of
Sciences, Beijing 100083, China;State Key Laboratory for Superlattices and
Microstructures, Institute of Semiconductors,\Chinese Academy of
Sciences, Beijing 100083, China;State Key Laboratory for Superlattices and
Microstructures, Institute of Semiconductors,\Chinese Academy of
Sciences, Beijing 100083, China |
| |
| 基金项目： | Project supported by the National
Natural Science Foundation of China (Grant No 60625405), and the
Special Foundation for State Major Basic Research Program of China
(Grant No 2006CB921504). |
| |
| 摘 要： |
|
| 关 键 词： | 分子束外延 量子点 两步生长 量子学 |
| 收稿时间： | 2007-04-10 |
| 修稿时间： | 2007-07-04 |
High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth |
| |
| Huang She-Song,Niu Zhi-Chuan,Zhan Feng,Ni Hai-Qiao,Zhao Huan,Wu Dong-Hai and Sun Zheng.High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth[J].Chinese Physics B,2008,17(1):323-327. |
| |
| Authors: | Huang She-Song Niu Zhi-Chuan Zhan Feng Ni Hai-Qiao Zhao Huan Wu Dong-Hai and Sun Zheng |
| |
| Institution: | State Key Laboratory for Superlattices and
Microstructures, Institute of Semiconductors,\Chinese Academy of
Sciences, Beijing 100083, China; The Key Laboratory of Beam Technology and Material
Modification of Ministry of Education,\Beijing Normal University,
Beijing 100875, China |
| |
| Abstract: | We develop a modified two-step method of growing high-density and
narrow size-distribution InAs/GaAs quantum dots (QDs) by molecular
beam epitaxy. In the first step, high-density small InAs QDs are
formed by optimizing the continuous deposition amount. In the second
step, deposition is carried out with a long growth interruption for
every 0.1 InAs monolayer. Atomic force microscope images show that
the high-density ($\sim $5.9$\times $10$^{10}$\,cm$^{ - 2})$ good
size-uniformity InAs QDs are achieved. The strong intensity and
narrow linewidth (27.7\,meV) of the photoluminescence spectrum show
that the QDs grown in this two-step method have a good optical
quality. |
| |
| Keywords: | molecular beam epitaxy quantum
dots a modified two-step growth |
|
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |
|
