Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

High performance oscillator with 2-mW output power at 300 GHz

Material structures and device structures of a 100-GHz InP based transferred-electron device are designed in this paper. In order to successfully fabricate the Gunn devices operating at 100 GHz, the InP substrate was entirely removed by mechanical thinning and wet etching. The Gunn device was connected to a tripler link and a high RF(radio frequency)output with power of 2 mW working at 300 GHz was obtained, which is high enough for applications in current military electronic systems.     

基于传输线原理的混响室散射场场线耦合模型

基于传输线原理,构建了均匀分布在单位球表面的入射波用于模拟混响室内"全向辐照"的电磁辐照模型,并利用Agrawal散射电压公式计算双导线传输线模型的终端负载响应电流。研究了均匀分布在球面入射波的入射方向、极化方向以及入射波数量对传输线终端响应的影响,并将数值计算结果与蒙特卡罗方法的计算结果进行对比。结果表明:分布在球面上的电磁波入射角为0~π、极化角度为0~π时,即可满足响应信号的数值完整性;入射电磁波数量达到100时,能够满足混响室内"全向辐照"的要求;理论模型计算结果与蒙特卡罗方法的计算结果吻合较好,该模型可以用于混响室内散射场场线耦合规律计算。     

混响室内加载物损耗特性试验研究北大核心CSCD

为研究混响室加载效应,首先分析了混响室内各损耗途径,得出加载损耗是混响室测试过程中唯一人为可控的损耗路径。构建了常见的5种不同测试场景,利用时域法分别对这5种测试场景条件下的混响室品质因数进行测试并进行分析。结果表明,金属天线支架造成的加载效应最小,非金属天线支架会对混响室造成明显加载,降低混响室的品质因数,且随着非金属天线支架数量的增多,这种效应会愈发明显。此外,对加载物的平均吸收截面进行了研究,将混响室内所有加载物视为一个加载吸收截面,得到金属天线支架的吸收截面最小,非金属天线支架的加载吸收截面有明显增加。     

激光在PERC晶硅电池中背面点接触电极制备中的应用

在经过Al2O3全钝化发射极钝化局部背接触(PERC)结构电池的背面实现良好的接触电极一直是制约着PERC高效电池向产业化推广的重要因素之一。本文采用532 nm激光烧蚀背面钝化介质层方法和传统的光刻工艺来实现背面电极的局部接触,并对两种方法进行详细的比较与分析。对激光烧蚀和激光烧结两种不同的局部接触电极制备方式进行了对比,发现激光烧蚀是更为适宜的工艺方式。相较于激光烧结,以激光烧蚀方式制备的电池的串联面接触电阻从10.7Ω.cm2降到1.24Ω.cm2,效率从4.2%提高到10.7%。     

二维GaAs 基光子晶体微腔的制作与光谱特性分析

研究了以InAs量子点为有源区的二维GaAs基光子晶体微腔的设计与制作,测试并分析了室温下微腔的光谱特性.观察到了波长约为1137 nm,谱线半高宽度约为1 nm的尖锐低阶谐振模式发光峰.我们比较了不同刻蚀条件下光子晶体微腔的发光谱线,结果表明空气孔洞截面的垂直度是影响光子晶体微腔发光特性的重要因素之一.通过调节干法刻蚀工艺,改变空气孔半径与晶格常数的比率,可以在较大范围内调节谐振模式发光峰位置,达到谐振模式与量子点发光峰调谐的目的.     

BaTiO3薄膜的Sol-gel法制备及对其介电特性的研究

以钛酸四丁酯和乙酸钡为主要原料,以乙二醇独甲醚为溶剂,采用溶胶凝胶法在(100)低阻硅片上制备了BaTiO-3薄膜电容,用XRD分析了该薄膜的结构,发现薄膜在硅片上取向生长,同时又对薄膜的介电性质进行研究,结果表明,薄膜的介电特性在高频范围内随频率的变化比较稳定并讨论了晶化温度对薄膜电容的影响     

Fabrication and Characterization of Si Nanocrystals Synthesized by Electron Beam Evaporation of Si and SiO2 Mixture

Silicon nanocrystals synthesized by electron beam （e-beam） evaporation of Si and SiO2 mixture are studied. Rutherford backscattering spectrometry of the as-deposited Si-rich silicon dioxide or oxide （SRO） thin film shows that after evaporation, the Si and SiO2 concentration is well kept, indicating that the e-beam evaporation is suitable for evaporating mixtures of Si and SiO2. The SRO thin films are annealed at different temperatures for two hours to synthesize silicon nanoerystals. For the sample annealed at 1050℃, silicon nanoerystals with different sizes and the mean diameter of 4.5 nm are evidently observed by high resolution transmission electron microscopy （HRTEM）. Then the Raman scattering and photoluminescence spectra arising from silicon nanocrystals are further confirmed the above results.     

The design and manufacture of a notch structure for a planar InP Gunn diode

A planar InP-based Gunn diode with a notch doping structure is designed and fabricated for integration into millimeter-wave and terahertz integrated circuits.We design two kinds of InP-based Gunn diodes.One has a fixed diameter of cathode area,but has variable spacing between anode and cathode;the other has fixed spacing,but a varying diameter.The threshold voltage and saturated current exhibit their strong dependences on the spacing(10 μm-20 μm) and diameter(40 μm-60 μm) of the InP Gunn diode.The threshold voltage is approximately 4.5 V and the saturated current is in a range of 293 mA-397 mA.In this work,the diameter of the diode and the space between anode and cathode are optimized.The devices are fabricated using a wet etching technique and show excellent performances.The results strongly suggest that low-cost and reliable InP planar Gunn diodes can be used as single chip terahertz sources.