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InAs/GaSb superlattice (SL) short wavelength infrared photoconduction detectors are grown by molecular beam epitaxy on GaAs(O01) semi-insulating substrates. An interfacal misfit mode AISb quantum dot layer and a thick GaSb layer are grown as buffer layers. The detectors containing a 200-period 2 ML/S ML InAs/GaSb SL active layer are fabricated with a pixel area of 800×800 μm^2 without using passivation or antirefleetion coatings. Corresponding to the 50% cutoff wavelengths of 2.05μm at 77K and 2.25 μm at 300 K, the peak detectivities of the detectors are 4 × 10^9 cm·Hz^1/2/W at 77K and 2 × 10^8 cm·Hz1/2/W at 300K, respectively.  相似文献   
2.
The GaSb-based laser shows its superiority in the 3-4 ~tm wavelength range. However, for a quantum well (QW) laser structure of InGaAsSb/AIGaInAsSb multiple-quantum well (MQW) grown on GaSb, uniform content and high com- pressive strain in InGaAsSb/A1GaInAsSb are not easy to control. In this paper, the influences of the growth tempera- ture and compressive strain on the photoluminescence (PL) property of a 3.0μm lnGaAsSb/A1GaInAsSb MQW sample are analyzed to optimize the growth parameters. Comparisons among the PL spectra of the samples indicate that the Ino.485GaAso.184Sb/Alo.3Gao.45Ino.25Aso.22Sbo.78 MQW with 1.72% compressive strain grown at 460 ~C posseses the op- timum optical property. Moreover, the wavelength range of the MQW structure is extended to 3.83 μm by optimizing the parameters.  相似文献   
3.
The GaSb-based laser shows its superiority in the 3–4 μm wavelength range. However, for a quantum well(QW) laser structure of InGaAsSb/AlGaInAsSb multiple-quantum well(MQW) grown on GaSb, uniform content and high compressive strain in InGaAsSb/AlGaInAsSb are not easy to control. In this paper, the influences of the growth temperature and compressive strain on the photoluminescence(PL) property of a 3.0-μm InGaAsSb/AlGaInAsSb MQW sample are analyzed to optimize the growth parameters. Comparisons among the PL spectra of the samples indicate that the In0.485GaAs0.184Sb/Al0.3Ga0.45In0.25As0.22Sb0.78MQW with 1.72% compressive strain grown at 460 C posseses the optimum optical property. Moreover, the wavelength range of the MQW structure is extended to 3.83 μm by optimizing the parameters.  相似文献   
4.
研究了双层堆垛InAs/GaAs/InAs自组织量子点的生长和光致发光(PL)的物理性质。通过优化InAs淀积量、中间GaAs层厚度以及InAs量子点生长温度等生长条件,获得了室温光致发光1391~1438nm的高质量InAs量子点。研究发现对量子点GaAs间隔层实施原位退火、采用Sb辅助生长InGaAs盖层等方法可以增强高密度(2×1010 cm-2)InAs量子点的发光强度,减小光谱线宽,改善均匀性和红移发光波长。  相似文献   
5.
InAs/GaSb superlattiee (SL) midwave infrared photovoltaic detectors are grown by molecular beam epitaxy on GaSb(001) residud p-type substrates. A thick GaSb layer is grown under the optimized growth condition as a buffer layer. The detectors containing a 320-period 8ML/SML InAs/GaS5 SL active layer are fabricated with a series pixel area using anode sulfide passivation. Corresponding to 50% cutoff wavelengths of 5.0 μm at 77K, the peak directivity of the detectors is 1.6 × 10^10 cm.Hz^1/2 W^-1 at 77K.  相似文献   
6.
GaSb-based 2.4μm InGaAsSb/AIGaAsSb type-I quantum-well laser diode is fabricated. The laser is designed consisting of three In0.35 Ga0.65As0.1Sb0.9/Al0.35 Ga0.65 As0.02Sb0.98 quantum wells with 1% compressive strain located in the central part of an undoped Al0.35Ga0.65As0.02Sb0.98 waveguide layer. The output power of the laser with a 50-μm-wide i-ram-long cavity is 28roW, and the threshold current density is 400A/cm2 under continuous wave operation mode at room temperature.  相似文献   
7.
We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using AlSb buffer layers. Optimization of AlSb growth parameter is aimed at obtaining high GaSh crystal quality and smooth GaSh surface. The optimized growth temperature and thickness of AlSb layers are found to be 450℃ and 2.1 nm, respectively. A rms surface roughness of 0.67 nm over 10 × 10 μm^2 is achieved as a 0.5 μm GaSh film is grown under optimized conditions.  相似文献   
8.
Evolution of surface morphology and optical characteristics of 1.3-μm In0.5Ga0.5As/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) are investigated by atomic force microscopy (AFM) and photoluminescence (PL). After deposition of 16 monolayers (ML) of In0.5Ga0.5As, QDs are formed and elongated along the [120] direction when using sub-ML depositions, while large size InGaAs QDs with better uniformity are formed when using ML or super-ML depositions. It is also found that the larger size QDs show enhanced PL efficiency without optical nonlinearity, which is in contrast to the elongated QDs.  相似文献   
9.
牛智红  任正伟  贺振宏 《光子学报》2008,37(6):1107-1111
研究了GaAs高指数面(331)A在原子氢辅助下分子束外延形貌的演化.原子力显微镜测试表明:在常规分子束外延情况下,GaAs外延层台阶的厚度和台面的宽度随衬底温度的升高而增加,增加外延层厚度会导致台阶的密度和台面的宽度增加然后饱和.而在原子氢辅助分子束外延情况下,当GaAs淀积量相同时GaAs外延层台阶的密度增大宽度减小.认为这是由于原子氢的作用导致Ga原子迁移长度的减小.在GaAs(331)A台阶基底上生长出InAs自组织纳米线,用光荧光测试研究了其光学各项异性特征.  相似文献   
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