| 1.3μm量子点垂直腔面发射激光器高频响应的优化设计 |
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| 引用本文： | 彭红玲,韩勤,杨晓红,牛智川.1.3μm量子点垂直腔面发射激光器高频响应的优化设计[J].物理学报,2007,56(2):863-870. |
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| 作者姓名： | 彭红玲 韩勤 杨晓红 牛智川 |
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| 作者单位： | 中国科学院半导体研究所，北京 100083 |
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| 基金项目： | 国家重点基础研究发展计划(973计划);国家重点研究项目;国家高技术研究发展计划(863计划) |
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| 摘 要： | 结合垂直腔面发射激光器(VCSEL)原理以及量子点增益特点，计算了有源层p掺杂结构的量子点VCSEL的材料增益和3 dB带宽，发现p掺杂结构可以大大提高频率特性.结合VCSEL激射条件和阈值特性，分析了对VCSEL结构的要求；分析了分布参数对频率特性的影响，对其外部封装提出了要求.设计了高频率响应的含氧化限制层的1.3 μm量子点VCSEL结构.
关键词：
量子点
垂直腔面发射激光器
微分增益
3 dB带宽
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| 关 键 词： | 量子点 垂直腔面发射激光器 微分增益 3 dB带宽 |
| 文章编号： | 1000-3290/2007/56(02)/0863-08 |
| 收稿时间： | 2006-05-15 |
| 修稿时间： | 8/9/2006 12:00:00 AM |
Modulation response analysis of 1.3 μm quantum dot vertical-cavity surface-emitting lasers |
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| Peng Hong-Ling,Han Qin,Yang Xiao-Hong,Niu Zhi-Chuan.Modulation response analysis of 1.3 μm quantum dot vertical-cavity surface-emitting lasers[J].Acta Physica Sinica,2007,56(2):863-870. |
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| Authors: | Peng Hong-Ling Han Qin Yang Xiao-Hong Niu Zhi-Chuan |
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| Institution: | Institute of Sereiconductor, Chinese Academy of Sciences, Beijng 100083, China |
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| Abstract: | Some important parameters, such as gain, 3 dB bandwidth and threshold current of 1.3 μm quantum dot vertical-cavity surface-emitting laser (QD VCSEL) are theoretically investigated. Some methods are developed to improve the VCSEL's modulation response. Significant improvement are prediced for p-type modulation doping. In connection with the threshold characteristic, we found that a structure with short cavity, multilayer quantum dots stack, p-type modulation doping and double intracavity contact on an un-doped DBR is much better suited to high speed quantum dot VCSELs. The parasitic effects of the VCSEL are analyzed and the influence of packaging of the VCSEL on its modulation responds is analyzed. |
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| Keywords: | quantum dots vertical-cavity surface-emitting laser differential gain 3 dB bandwidth |
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